1W AMPLIFIER CLASS AB Search Results

Contextual Info: Class-AB Speaker Amplifiers 1W+1W Stereo Speaker / Headphone Amplifier BH7884EFV No.14077EBT06 ●Description The BH7884EFV is a low voltage, low noise, high output speaker and headphone amplifier drive, in which a Bi-CMOS process is used. This IC supports: headphone amplifier gain adjustment, active/suspend switching, speaker amplifier

princeton speaker protection circuit ic

Abstract: PT2366 speaker protection of audio amplifier circuit diagram ELECTRONIC DICTIONARY cf - tv 2331 PT2366L GLIDE
Contextual Info: PT2366L 1W Class-AB Audio Power Amplifier DESCRIPTION PT2366L is an audio power amplifier IC utilizing advanced CMOS technology. It can deliver 1W power output under 5V supply voltage. The power consumption is very low in stand-by mode. Built-in over-temperature protection, package size is

transistor 2.4GHz amplifier schematic wifi

Abstract: schematic wifi board
Contextual Info: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT

SZA-2044

Abstract: SZA-2044Z
Contextual Info: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT

SPA1426Z

Abstract: TAJA105K020R
Contextual Info: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs

Contextual Info: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor

Transistor BC 457

Abstract: SOF-26 SPA1426Z POWER TRANSISTOR MCH185CN104KK TAJA105K020R bc 457 Transistor MCH185A221JK -1426Z
Contextual Info: SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier SPA-1426Z Preliminary 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER RoHS Compliant and Pb-Free Product Package: SOF-26 Product Description Features RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar

Contextual Info: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs

MCH182CN104

Contextual Info: SZA-3044 Z SZA-3044(Z) 2.7GHz to 3.8GHz 5V 1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT

SZA-2044

Abstract: SZA-3044 SZA-3044Z SZA-5044 transistor frequency 30GHz gain 20 dB
Contextual Info: SZA-3044 Z SZA-3044(Z) 2.7GHz to 3.8GHz 5V 1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT

Transistor BC 457

Abstract: MCH185CN104KK SOF-26 TAJA105K020R SPA-1426Z
Contextual Info: SPA-1426Z SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA-1426Z is made with InGaP-on-GaAs

SPA-1426

Abstract: Transistor BC 457 MCH185A8R2JK MCH185A221JK
Contextual Info: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs

Contextual Info: SZA-3044 Z SZA-3044(Z) 2.7GHz to 3.8GHz 5V 1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT

PT2366

Abstract: DSA0010878
Contextual Info: Tel: 886-2-66296288 Fax: 886-2-29174598 URL: http://www.princeton.com.tw 1W Class-AB Audio Power Amplifier PT2366 DESCRIPTION PT2366 is an audio power amplifier IC utilizing advanced CMOS technology. It can deliver 1W power output under 5V supply voltage. The power consumption is very low in stand-by mode. Built-in

PD57006

Abstract: B10TJ DB-57006-600 EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 3214W-1-103E GRM42-6C0G151J50
Contextual Info: DB-57006-600 RF POWER amplifier using 1 x PD57006 N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 300 - 600MHz ■ Supply voltage: 26V ■ Output power: 1W ■ Operation: class A ■ IMD3 2 tones test : < -40 dBc @ 1W avg

MC4890

Abstract: MO-187 MO-229 MC4890S 02apo
Contextual Info: MC4890 1 W Mono Class AB Audio Power Amplifier General Description Features The MC4890 is an audio power amplifier designed for portable communication device applications such as mobile phone applications. The MC4890 is capable of delivering 1W of continuous average power to an 8Ω BTL and with

ap4890

Abstract: 217HzVDD ap89xx AA4890 Aplus Integrated Circuits IC AP4890 ic AP4890
Contextual Info: INTEGRATED CIRCUITS INC.- AP4890 1W Class-AB AUDIO POWER AMPLIFIER General Description : The AP4890 is an audio power amplifier primarily designed for demanding applications in mobile phones and other portable communication device applications. It is capable of delivering 1 watt of continuous average power to an 8Ω BTL load with

Contextual Info: UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 1

9013 npn transistor

Abstract: 9012 Unisonic
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1  FEATURES TO-92 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity.

mmbt9013

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012

9012 Unisonic

Abstract: 9012L-
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  1 FEATURES TO-92 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity

2sc9013

Abstract: SS9012 14-EC
Contextual Info: Transistors 2SC9013 USHA INDIA LTD 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • High total pow er dissipation. (PT-625mW) • High C ollector Current. (lc = 500mA) •Complementary to SS9012 •Encellent hFE linearity ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

2SC2085

Abstract: J0310
Contextual Info: Power T ransîstors 2SC2085 2SC2085 Silicon PNP Triple-Diffused Planar Type Line-Operated AF. Amplifier Öhrominance Output Package Dimensions. - Unit ! ram in ^ + nt; • Features • 1W output in class-A operation ' • Large collectpr pow er dissipation. Pc

PT-625mW

Contextual Info: PJ2N9013 NPN Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION TO-92 • High total power dissipation PT=625mW • High collector Current (Ic=500mA) • Complementary to PJ2N9012 • Excellent hEF Linearity