1T74503 Search Results

celeritek LNA

Abstract: CAS2401 CAS2401-AM CAS2401-AM-000T MS03 SOIC-16
Contextual Info: 9— -CELERÊTEK C A S 2 4 1 Am plifier-Switch 2 .3 to 2 .5 G H z June 1995 1 of 4 2 00m W (+ 2 3 d B m ) Functional Block Diagram T/R m odes sw itched w ith am plifier su p p ly -vg Features □ □l □ Q Q 200mW (-)-23 dBm) output pow er 20% power added efficiency (including output switch loss)

celeritek LNA

Abstract: CAS2401 CAS2401-AM CAS2401-AM-000T MS03 SOIC-16
Contextual Info: 9— -CELERÊTEK C A S 2 4 1 Am plifier-Switch 2 .3 to 2 .5 G H z June 1995 1 of 4 2 00m W (+ 2 3 d B m ) Functional Block Diagram T/R m odes sw itched w ith am plifier su p p ly -vg Features □ □l □ Q Q 200mW (-)-23 dBm) output pow er 20% power added efficiency (including output switch loss)

DIODE in 5060

Abstract: CMM2306 CMM2306-AJ CMM2306-AJ-000T
Contextual Info: CMM2306 Product Specifications January 1996 1 of 4 800 to 2700 MHz Broadband Driver Amplifier Features □ +17.5 dBm Output Power □ Low Current: 70 mA, Typ. □ 800 - 2700 MHz Operation □ Single +3V to +6V Supply □ Input and Output Matched to S0Q, DC Blocked

celeritek LNA

Abstract: CAS1401 CAS1401-AM CAS1401-AM-000T SOIC-16 SOIC-16 ep layout SOIC16 ep layout
Contextual Info: B - C S L E R I7 E K Amplifier-Switch 1.7 to 2.2 GHz 200mW +23 dBm June 1995 (1 of 4) Functional Block Diagram T/R modes switched with amplifier supply -vg Features 3 Q □ Q Q CAS1401 200mW (+23 dBm) output power 20% power added efficiency (including output switch loss)

PBA FET

Abstract: CFK2062-P5 CFK2062-P5-000T
Contextual Info: s i m B P H m P rod u ct S p e cifica tio n s D ecem b er 1997 iof4 CFK2062-P5 r 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

CSW2101

Abstract: CSW2101-AJ CSW2101-AJ-000T n4503
Contextual Info: —^ S L S R IT S K B CSW2101 2.4 to 2.5 GHz SPDT Switch P ro d u ct S p e c ific a tio n s J u ly 1 9 9 5 1 of 2 Features □ High Dynamic Range Supports All Approved ISM Band Signal Levels □ PCMCIA Compatible 8 Pin SOIC Package □ Low Insertion Loss

Contextual Info: 9 ~ ze s L S B ir m K CMM1333 Prelim inary Product Inform ation S eptem ber 1996 1 o f 6 1.85 to 1.91 GHz 5V, 31 dBm, PCS/PCN Power Amplifier Features □ 35% Linear Power Added Efficiency □ 31 dBm Output Power (IS-136 TDMA) □ 29 dBm Output Power (J-STD-18 CDMA)

lt 8217

Abstract: tt 6093 CMM1306 CMM1306-AK DD01 IS-54 12418 SOIC8
Contextual Info: « I COIKIf CMM1306 P ro d u c t In fo rm a tio n M a rc h 1 9 9 6 1 o f 5 824 to 928 MHz 2 Stage Digital Cellular Power Amplifier Features □ 40% Power Added Efficiency Meeting ACP Spec □ 30 dBm Output Power □ Low Distortion □ SOIC-8 Surface Mount Package

2a 5060

Abstract: 6 PIN SMD 3236 117450 CMM0530 CMM0530-CT IS-136 tdma circuit diagram SSRN
Contextual Info: « i e » f r a CMM0530 r Prelim inary Product Inform ation M ay 1998 1 o f 5 824 to 928 MHz 3.0V, 30.5 dBm Multi-Mode Power Amplifier Features □ Multi-Mode Operation from 3V Supply □ 42% Linear Power Added Efficiency □ 55% Power Added Efficiency @ +32 dBm Psat