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    1SMB3EZ100 Search Results

    1SMB3EZ100 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    1SMB3EZ100
    		PanJit Semiconductors SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) Original PDF 129.88KB 5
    1SMB3EZ100
    		Transys Electronics SURFACE MOUNT SILICON ZENER DIODE Scan PDF 379.99KB 5
    badge 1SMB3EZ100
    		SUNMATE electronic Co., LTD Surface mount silicon Zener diode in SMB/DO-214AA package with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and maximum forward voltage of 1.5V at 200mA.Surface mount silicon zener diode in SMB package, 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, junction temperature from -55 to +175°C, reverse leakage current up to 80µA.Surface mount silicon zener diode in SMB package with 3.0W power dissipation, voltage range from 3.9V to 400V, low leakage current, high reliability, and maximum forward voltage of 1.5V at 200mA.Surface mount silicon Zener diode in SMB/DO-214AA package, 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, maximum forward voltage 1.5V, junction temperature range -55 to +175°C.Surface mount silicon Zener diodes in SMB package with 3.0W power dissipation, voltage range from 3.9V to 400V, low leakage current, high reliability, and maximum forward voltage of 1.5V at 200mA.Surface mount silicon Zener diode in SMB package, 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, junction temperature from -55 to +175°C, reverse leakage current as low as 0.5µA. Original PDF

    1SMB3EZ100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    zener 3.082

    Abstract: 1SMB3EZ13 1SMB3EZ10 1SMB3EZ100 1SMB3EZ11 1SMB3EZ12 1SMB3EZ51 3051 zener diode 47-10 Thermal Resistance to ambient SMB Case diode IR SMB
    Contextual Info: 1SMB3EZ6.8~1SMB3EZ100 SILICON ZENER DIODES VOLTAGE 6.8 to 100 Volts POWER 3.0 Watts SMB/DO-214AA Unit: inch mm FEATURES • Low profile package .155(3.94) .130(3.30) • Built-in strain relief • Plastic package has Underwriters Laboratory Flammability


    Original     		1SMB3EZ100 SMB/DO-214AA DO-214AA, MIL-STD-750, zener 3.082 1SMB3EZ13 1SMB3EZ10 1SMB3EZ100 1SMB3EZ11 1SMB3EZ12 1SMB3EZ51 3051 zener diode 47-10 Thermal Resistance to ambient SMB Case diode IR SMB PDF

    1SMB3EZ11

    Abstract: 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200
    Contextual Info: 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l For surface mounted applications in order to optimize board space l Low profile package l Built-in strain relief l l Glass passivated junction


    Original     		1SMB3EZ11 1SMB3EZ200 DO-214AA DO-214AA, MIL-STD-750, 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200 PDF

    TSP160C

    Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
    Contextual Info: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04


    Original     		50Amp 80Amp 100Amp 375x360x390/390x240x420 375x360x390 O-252 TSP160C ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C PDF

    GV 475 diode

    Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ200 zener Diode 19B H 48 zener diode
    Contextual Info: TRANSYS ELECTRONICS LIMITED 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 W atts FEATURES For surface mounted app cations in order to DO-214AA optimize board space MODIFIED J-BEND Low prof e package Built-in strain re ef


    OCR Scan     		1SMB3EZ11 1SMB3EZ200 0J/10 DO-214AA, MIL-STD-750, GV 475 diode 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ200 zener Diode 19B H 48 zener diode PDF