IRF9120
Abstract: 1rf740 1rf730 IRF9223 1RF840 IRF9122 IRF9121 LM3661TL-1.25 IRF713 l 9143
Contextual Info: - 25 4 - f M tt £ ft Vd s or € X £ Vg s V Id Pd * /CH Vd g % fé <Ta=25cC ) (V) (A) ÏI Ig s s Vg s th) Id s s * /CH min (nA) m Vg s (V) ( HA ) Vd s (V) (V) Vi>s= Vg s max (V) % 1D (nA) ft (Ta=25‘ C) Id (on) Ds(on) g fs Ciss Coss Crss Vg s =0 (max)
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OCR Scan
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1RF642
O-220AB
IRF643
IRF644
IRF833
IRF840
-220AB
IRF9120
1rf740
1rf730
IRF9223
1RF840
IRF9122
IRF9121
LM3661TL-1.25
IRF713
l 9143
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IRF8C30
Abstract: 1RF640 1RFBC40 1RF840 IRFD9010 IRFAF50 IRFAF52 IRFAG50 IRFBC32 1RFD110
Contextual Info: - f M ± Vd s or tt € « fi t Vd g h V £ m fë (Ta=25t3) Vg s (V) Id 1GSS Pt> * /CH * /CH (A) (W) (nA) V g s th) 1DSS Vg s (V) (MA) Vd s (V) (V) (V) ft m '14 Ciss Vd s = Vg s Id (mA) Coss Crss Vg s -O (max) *typ V g s ( 0 ) (V) Id (A) *typ (A) 257 (Ta=25°C)
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OCR Scan
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IRFAF50
O-204AA
IRFAF52
1RFAG40
O-220AB
IRF9630
IRF9640
T0-220AB
IRF8C30
1RF640
1RFBC40
1RF840
IRFD9010
IRFAG50
IRFBC32
1RFD110
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irfd110
Abstract: IRFD113 1RFD113
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD110 IRFD113 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline TM O S FET TR A N S IS TO R S
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OCR Scan
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IRFD110
IRFD113
IRFD110
IRFD113
1RFD113
1RFD113
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