1RF9Z34 Search Results

1RF520

Abstract: 1RFP460 1RFP150 IRF9540 equivalent irfp450 equivalent 1rfbc20 IRF9640 equivalent 1RFP054 1RFPG50 IRFP260 equivalent
Contextual Info: International HEXFET Power MOSFETs I ö R Rectifier HEX Size Part Number VDS Recommended Source Bonding Wire RDS on Die Outline Figure m|s mm Equivalent Device Type HEXFET® Die 2 IRFC420 500 3 D9 8 0.2 *> IRFCC20 600 4.4 DIO 8 0.2 1RFBC20 2 IRFCE20 800

1RF9Z34N

Abstract: IRF9Z34N 1RF9Z34 RF1010
Contextual Info: PD - 9.1485A International IG R Rectifier IRF9Z34N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Plating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss = -55V ^ D S o n = 0 . 1 0 Q

Contextual Info: • I IM F - * H . I r\ | XI r \ “ ^ L lA S l Final Electrical SDecifications □ I I F T\J LTC1159/LTC1159-3.3/LTC1159-5 TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators M a y 1994 KRTURCS DCSCRIPTIOn ■ Operation from 4V to 40V Input Voltage

1RF9Z34

Abstract: Charge/1RF9Z34 IRF9Z34
Contextual Info: PD-9.648A In te rn a tio n a l Es R e c tifie r IRF9Z34 HEXFET® Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements