1R0H Search Results

Contextual Info: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

MCM514258AZ80

Abstract: MCM 2128 RAM MCM514258AZ70 MCM 2128 M514258A MCM5142S8A-70
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M CM 514258A 2 5 6 K x 4 C M O S Dynam ic R A M S tatic Column The MCM514258A is a 1.0/t CMOS high-speed, dynam ic random access m em ory. It is organized as 262,144 fo u r-b it w ords and fabricated w ith CMOS silicon-gate process tech­

Contextual Info: H Y 5 1 4 4 0 0 A • H Y U N D A I S e r ie s 1Mx 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: SMD Power Inductor 0415CDMCQ/DS Description • Magnetically shielded. • L W H: 4.75 4.35 1.5 mm Max. • Product weight: 0.15g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. x × RoHS Halogen Free Dimension - [mm]

m5408

Contextual Info: DRAM MODULE 32 Mega Byte KMM54081OOAK/AKG Fast Page Mode 8Mx40 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package G EN ERA L D ESCRIPTIO N FEATURES • Performance Range' The Samsung KM M 5408100AK is a 8M bit x 40 Dynam ic RAM high density m em ory module. The

Contextual Info: SMD Power Inductor 0412CDMCQ/DS Description • Magnetically shielded. • L W H: 4.75 4.35 1.2 mm Max. • Product weight: 0.12g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. x × RoHS Halogen Free Dimension - [mm]