1Q 3R Search Results

gsm mini bts schematic

Abstract: SEMINAR ON 4G TECHNOLOGY LM5030 3G Base Station Coexistence of GSM, WCDMA and LTE APC single phase voltage stabilizer CPRI power amplifier transceiver 4G LTE lm3478 schematic BBU RRU xed 2013
Contextual Info: Communications Infrastructure Solutions Guide national.com/comms 2009 Vol. 1 1Q 2008 Data Conversion Solutions . 7-11 Low Power DAC and Temperature Sensors.12

BBU RRU

Abstract: 31002 LMK1000 LQFP-48 thermal pad bbu installation LM5001 13002 pwm smd Duplex LMX1601 4G base station power amplifier
Contextual Info: Communications Infrastructure Solutions Guide national.com/comms 2009 Vol. 1 1Q 2008 Data Conversion Solutions . 7-11 Low Power DAC and Temperature Sensors.12

smoke alarm using IC NE 555

Abstract: videophone pt100 amplifier schematic ina103 pt100 msp430 schematic ads1232 weigh scale schematic motor driver full bridge 10A with uc3638 rtd pt100 interface to 8051 3 phase dc converter afe circuit diagram igbt 24v 10A tl494 TEC H bridge that use uc3638 IC
Contextual Info: Industrial Solutions Guide Amplifiers, Data Converters, Digital Signal Processors, Digital Temperature Sensors, Interface, Microcontrollers, Power Controllers, Power Management 1Q 2006 ➔ Inside Intelligent Sensors 4 Motor Control 19 Security 24 Test and Measurement

LMC71111

Abstract: SMD SC70-5 spice MODEL FOR LM119 LM161 LMV7239 spice LM319 LM119 LMV243 LM7171 LMH6624
Contextual Info: Amplifier Products Selection Guide 1Q 2006 National’s Amplifier Product Portfolio High Speed Amplifiers Fully Differential Buffers Voltage Feedback Fixed Gain Current Feedback Selectable Gain Multiplexers Differential Drivers VGAs Single 2:1 Linear in dB

HDMI TO VGA MONITOR PINOUT

Abstract: SEMINAR ON 4G TECHNOLOGY GSM BTS antenna sot23-5 code BBB GSM repeater HDMI to vga pinout microwave products HSPA Module LM5070 12v output DS90LV804TSQ
Contextual Info: Wireless Infrastructure 2G/3G/4G Base Station Solutions Guide 2008 Vol. 1 1Q 2008 High-Speed Data Converters . 4-6 Low-Power Data Converters and Temperature Sensors . 7-8 RF Detectors and High-Speed Comparators.9 Precision and

Contextual Info: ROYALOHM Thick Film Chip Resistors Performance Specification Temperature Coefficient 1Q-10Q 11Q- 100Q >100Q Short Time Overload ±400PPM/°C ±200PPM/°C ±100PPM/°C 0201: >100Q S±200PPM/°C ±5%: ±(2.0% + 0.1Q)Max ±1%: ±(1.0% + 0.1Q)Max Insulation Resistance

Contextual Info: ROYALOHM AEC-Q200 Version Chip Resistor - HQ Series Performance Specification Test Item Test Methods Determine Specifiction Temperature Coefficient Measure between: -55 C •+125°C 1Q < R < 10Q : ±400PPM/°C 11Q< R<100Q : ±200PPM/°C 100Q<R<10M Q:±100PPM /°C

SEMINAR ON 4G TECHNOLOGY

Abstract: HDMI TO VGA MONITOR PINOUT LTE MIMO repeater lte RF Transceiver MIMO 2x2 catalog 4000 single family smd cmos VGA TO HDMI PINOUT LM97593 GSM hsdpa repeater circuit GSM 3g repeater circuit dual gsm repeater
Contextual Info: Wireless Infrastructure 2G/3G/4G Base Station Solutions Guide national.com/wireless 2Q 2008 1Q 2008 Solutions for 2G, 2.5G, 3G, LTE and 4G wireless mobile base stations e.g. GSM/EDGE/ GPRS, W-CDMA, CDMA2000, TD-SCDMA, WiMAX as well as other applications

29DL800b

Contextual Info: FLASH MEMORY CMOS X M 10 / 12/ BM29DL8 1Q/-12 FEATURES Single 3.0 V read, program, and erase Minimizes system level power requirements Simultaneous operations Read-while-Erase or Read-while-Program Compatible with JED EC-standard commands Uses same software commands as E2PROMs

ROYALOHM as12

Contextual Info: ROYALOHM Anti-Surge Thick Film Chip Resistors Performance Specification Temperature Coefficient 1Q -9Í276 < ± 400PPM/°C* Humidity Steady State ±(3.0% + 0.1Q)Max 10Q~10M£2S± 100PPM/°C Load Life In Humidity ±(3.0% + 0.1£2)Max Short Time Overload ±(1.0% + 0.1i2)Max

Contextual Info: International IQR Rectifier pd-mwo > preliminary IRL6903S HEXFET Power M O SFET • Logic-Levei Gate Drive • Advanced Process Technology • Surface Mount • Fast Switching • P-Channel • Fully Avalanche Rated Voss = -30V R D S on = 0 .0 1 1Q Id = -91 A

7 Segment Display GL

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. LDS —E 5 0 0 3R I —SY 9 ,5 0 [0 .3 7 4 ] 4,50 HO. 17 7] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 X PARAMETER 25 ,00 [0 ,9 8 4 ] MIN Typ PEAK WAVELENGTH 20,32 [0 ,8 0 0 ] lf= 1Q m A MAX UNITS 590 FORWARD VOLTAGE

1Q 3R

Abstract: MSI s1 UT54ACS279 UT54ACTS279 893Q S447
Contextual Info: UT54ACS279/UT54ACTS279 Radiation-Hardened Quadruple S-R Latches FEATURES PINOUTS 16-Pin DIP Top View radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply 1R 1 16 VDD 1S1 2 15 4S 1S2 3 14 4R 1Q 2R 4 5 13 12 4Q 3S2 2S

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. L D S - C 5 13 R I-S Y ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 X PARAMETER MIN PEAK WAVELENGTH lf= 1Q m A MAX 590 FORWARD VOLTAGE REVERSE VOLTAGE TVP TEST CÛND nm 2.1 2.5 5.0 AXIAL INTENSITY UNITS Vf Vr jjcd 15000

pbt wire

Abstract: PCS-E honda
Contextual Info: 1 R fi ^ 1Q-5 > 5.7 P 0 S .# n /2 + 1 2.54 4-R1 P0S.#1 4- < CD / Q O MARKING CP/N) / i i À FOR DISCRETE WIRE P 0 S .$ ( n / 2 ) 2 —M2.5 LAST POS. PART NO. NOTE 1.CONTACT PLATING GOLD(0.2 Mm) ON MATING AREA AND TERMINATION AREA ALL OVER NICKEL. 2. PART NO.

Contextual Info: 03.6 1Q ±0.1 0 1 .5 7 ±0.05 6PLCS. A /\ A ^ k & A 1A A r DATE CODE Ll_Lj-Ü | ^ 1 E= 3 'i=j=i' g -" [r"' 1 1 CN.1 P 0 S J 2 CN.1 POS.#1 02.77 ±M5 2PLCS. '- _—1 # 4-40U N C 31 9 4 CN.1 P 0 S J2 CN.1 PQ5.#1 CN.1 P0SJ26

Contextual Info: F-198-1 ZLTMM-1Q&-02-T-D-265 % <SSftfc ZSTMM-110-09-S~D JS5 ZLTMM-110~03-G~D~425 5,r?' ’ f <•' . ,'N ' ’ " 2 mm SHRO •- S P E C IF IC A T IO N S M aterials: Mates with: 3Q T. SQW ESOT, H SMM MMS, TCSD - i- < • Board stacking oi /DC cable mating options

Contextual Info: FEATURES • 1 8 0 0 -4 2 0 0 MHz ■ 50 nSec Switching Speed ■ TTL Control ■ 24 Pin Flatpack 4 BIT RF IN / O U T 24 PART GND 23 GND 99 GND 21 GND on 2 GND 3 GND 4 GND 5 CONTI GND 1Q GND m GND 6 CONT2 7 8 CONT3 CONT4 GND 1 ft GND i1 r5 GND i1d4 9 GND 10

Contextual Info: TOSHIBA GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 3.2 ±0.2 10 ±0.3 The 3rd Generation Enhancement-Mode High Speed : tf=0.30/*s Max. (Iq = 15A)

Contextual Info: TOSHIBA GT5J301 GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 3.2 ±0.2 10 ±0.3 The 3rd Generation Enhancement-Mode High Speed : tf=0.30/*s Max. (Iq = 5A)

circuit diagram of single phase water pump

Abstract: 12v -230v 200W inverter CIRCUIT DIAGRAM 12V 230V Inverter Diagram 3 phase inverter ir2130 12V 230V Inverter Diagram for IGBT 12v to 230v inverters circuit diagrams single phase inverter IGBT driver 3 phase brushless dc control ir2130 ecn3051 circuit diagram of hitachi washing machine
Contextual Info: +,7$&+, 3RZHU 6HPLFRQGXFWRU 3URGXFW - ,*%7 PRGXOH - +LJK 9ROWDJH ,& Motor driver, MOS/IGBT gate driver - 6XUJH 6XSSUHVVRU 3RZHU 'LRGH - +LJK 9ROWDJH )DVW 5HFRYHU\ 'LRGH +LWDFKL ,*%7 0RGXOHV

Contextual Info: TOSHIBA GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) U n it in mm HIGH PO W ER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS The 3rd G eneration Enhancem ent-Mode H ig h Speed : tf =0.30^8 (M ax.)

HP03

Abstract: ROYALOHM 1206 1Q-10MQ HP06 HP10 0603 ROYALOHM HP05 ROYALOHM HP06
Contextual Info: ROYALOHM High Power Thick Film Chip Resistors Performance Specification Temperature CoefRcient ±5%; ± 3.0% + 0.1fl Max ±1%: ±(0.5% + 0.1fì)Max ±5%: ±(3.0% + 0.1fí)Max ±1%: ±(1.0% + 0.1£î)Max ±5%: ±(3.0% + 0.1í2)Max ±1%: ±(1.0% + 0.1fí)Max

ROYALOHM 0805

Abstract: HP05 ROYALOHM HP06 0603 ROYALOHM marking
Contextual Info: ROYALOHM High Power Thick Film Chip Resistors Performance Specification Temperature CoefRcient ±5%; ± 3.0% + 0.1i2 Max Humidity (Steady State) m ~ 1 0 Q <± 200PPM /°C ±1%: ±(0.5% + 0.1fì)Max 11fi~10MQ<± 100PPM/°C Short Tim e Overload ±5%: ±(2.0% + 0.1£2)Max