1P3 CAPACITOR Search Results

MALLORY CAPACITOR type LP

Abstract: LP562M mallory lp MALLORY CAPACITOR CATALOG
Contextual Info: Type LP • MallorY Radial Snap-In Capacitors GENERAL SPECIFICATIONS ■ 105°C - Long Life DC Leakage Current: I = .02 CV C = Capacitance in iaF V = Rated Voltage I = Leakage Current in/xA ■ 22 to 35 mm Diameters 10 mm Lead Spacing ■ High Reliability

transistor 1p3

Contextual Info: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features RFMD’a SXA-3318B amplifier is a high efficiency GaAs Heterojunction

Contextual Info: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features RFMD’a SXA-3318B amplifier is a high efficiency GaAs Heterojunction

transistor 1p3

Abstract: SXA3318B SXA3318BZ sirenza rfmd AH03L MCH18 SXA-3318B TAJB104KLRH TAJB106K020R L350
Contextual Info: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features Optimum Technology

MIC2401

Contextual Info: n n WURTH ELEKTRONIK eoc ELECTRICAL SPECIFICATIONS 25°C u n le s s o th e rw ise n o te d : .429 [10.89] INDUCTANCE: DIELECTRIC RATING: TURNS RATIO/POLARITY: .860 MAX. [21.84] [nnjinr1 'nnnnnnnn • LOT CODE * DATE CODE .610 [1.02] *.0 4 0 4 .100(2 )

sc 8256

Abstract: SNA586 SNA-586
Contextual Info: IS Stanford Microdevices Product Description Stanford Microdevices’ SNA-586 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. This amplifier provides 19dB of gain when biased at 80mA and 5.0V. External DC decoupling capacitors determine low frequency

capacitors 22p NPO ceramic

Abstract: Miniature Ceramic Plate Capacitors 2222 philips 2222 679 series Philips 2222 capacitors ceramic Capacitors plate philips philips ceramic capacitors 2222 679
Contextual Info: Product specification Philips Components Miniature ceramic plate capacitors FEATURES Precision capacitors NPO QUICK REFERENCE DATA • High-frequency circuits DESCRIPTION VALUE • High reliability Capacitance range • High stability Rated DC voltage 100 V; note 1

GN2011

Contextual Info: GaAs MMIC Microwave Monolithic IC # GaAs MMIC for Mobile Communication Use Block Type No. Functions Main Characteristics Applications Package No. Low noise amplifier with AGC, small current PG: 18dB, Id = 7mA NF: 2.3dB ACG: 30dB GSM Analog PDC GN01032N Low noise amplifier + mixer with local amplifier,

IT1701

Contextual Info: MPS-173011-82 1H> I t 1701 i l l 111891 AHiPiiiQf Email: info@mwtinc.com www.mwtinc.com i * .j •■ f m *m • +45 dBm Typical IP3 Single Positive Bias • 1 W Typical Output Power Surface Mount Package • 14 dB Typical Gain The M PS-173011-82 is a modular amplifier designed to meet the ultralinear transm it­

Contextual Info: GaAs 1C High Isolation SPST Switch Non-Reflective Positive Control 0.7-2.0 GHz EBAlpha AS121-12 Features SOIC-8 • Complementary Positive Control Voltages PIN 8 ■ 5 V Operation «— ■ Input and Output Non-Reflective PIN 1 IN D IC A TO R - ■ High Isolation 46 dB @ 0.9 GHz

Contextual Info: AWS5504-S14 Ë È D È G Ç S GaAs IC High Power Positive Control SPDT Reflective Switch DC-2.0 GHz * Advanced Product Information Rev. 1 FEATURES • High Linearity IP3 55 dBm @ 0.9 GHz • Low Insertion Loss (0.35 dB@ 0.9 GHz) • +3 V to +5 V Operation

transistor 1p3

Abstract: Avantek amplifier UTC
Contextual Info: Whol HEW LETT* %L'fíM PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 526 Series Features • Frequency Range: 10 to 500 MHz • High Gain: 28.0 dB Typ • Medium Output Power: +21.0 dBm (Typ) • Temperature Compensated

LP562M035C5P3

Abstract: X25 UMI MALLORY CAPACITOR type LP sc 222m umi x25 LP-15-1 P222M M200E c 1181 H
Contextual Info: Type LP • MallorY Radial Snap-In Capacitors ■ 105°C - Long Life ■ 22 to 35 mm Diameters 10 mm Lead Spacing GENERAL SPECIFICATIONS DC Leakage Current: I = .02 C V Not to exceed 3.0 mA C = Capacitance in fiF V = Rated Voltage I = Leakage Current in mA.

i60e

Abstract: lt 867
Contextual Info: Type LPX • MallorY Radial Snap-In Capacitors 85°C - General Purpose High Capacitance 22 to 35 mm Diam eters 10 mm Lead Spacing Ideal For Input Filter in S M P S GENERAL SPECIFICATIONS DC Leakage Current: i=3x C = C apacitance in V = Rated Voltage I = Leakage Current in mA

glhz

Abstract: marking M3 marking 606 mmic
Contextual Info: Infineon ! e s h n o !o g i s s G aA s MMIC CM Y 210 Data Sheet • Uttralinear Mixer with integrated LO-Buffer • Very high lnput-IP3 of typical 24 dBm • Very low LO-Power demand of typ. 0 dBm • • Suited for Up- and Down-Conversion Wide LO-Frequency Range < 500 MHz to

Contextual Info: HEWLETT-PACKARD/ CNPNTS blE ]> • W EM HEW LETT 1 "KM PACKARD Features • • • • • • • • 444 7 5Û M D O l G lb ê 31? « H P A MSF-86 Series Silicon Bipolar MMIC Frequency Converter Functional Block Diagrams Up or Down Frequency Conversion with up to

RF9986

Abstract: low power dc mixer gilbert cell mixer PIN-20 IC DIAGRAM
Contextual Info: Preliminary MICRO-DEVICES RF9986 PCS LOW N O IS E A M P L IF IE R /M IX E R T yp ical A pplications • CDMA/TDM A/DCS1900 PCS Systems Micro-Cell PCS Base Stations • PHS 1500/WLAN 2400 Systems Portable Battery Powered Equipment • General Purpose Down Converter

Contextual Info: TOSHIBA TPS812JPS814 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR T P<;»17 g • ■ t p <;» u «M T ■ ■ IM F ■ ■ PHOTOELECTRIC SWITCHES U n i t in m m COPIERS, PRINTERS, A N D FACSIMILES C O M M O D IT Y A N D TICKET VENDING MACHINES A N D TER M INA L EQUIPM ENT IN FINANCIAL

38813

Contextual Info: Philips Semiconductors RF Communications Products Product specification Low voltage LNA and mixer - 1GHz SA601 DESCRIPTION PIN CONFIGURATION The SA601 is a combined RF amplifier and mixer designed for high-performance low-power communication systems from 80CM2OOMH2. The low-noise preamplifier has a 1.6dB noise figure

Class B power amplifier, 2MHz

Contextual Info: SE2425U 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information Applications ƒ ƒ ƒ Bluetoothtm wireless technology Class 1 USB dongles, PCMCIA, flash cards, Access Points Enhanced data rate Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Integrated input and inter-stage match

2425U

Abstract: SE2425U-EK1 SE2425U SE2425U-R SE2425U-EV1
Contextual Info: SE2425U RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information Applications ƒ ƒ ƒ Product Description Bluetoothtm wireless technology Class 1 USB dongles, PCMCIA, flash cards, Access Points Enhanced data rate A monolithic, high-efficiency, silicon-germanium power

SE2425U-EK1

Contextual Info: DATA SHEET SE2425U : 2.4 GHz Bluetooth Power Amplifier IC Applications • •  Bluetoothtm wireless technology Class 1 USB dongles, PCMCIA, flash cards, Access Points Enhanced data rate Features           Integrated input and inter-stage match

Contextual Info: DATA SHEET SE2425U : 2.4 GHz Bluetooth Power Amplifier IC Applications • •  Bluetoothtm wireless technology Class 1 USB dongles, PCMCIA, flash cards, Access Points Enhanced data rate Features           Integrated input and inter-stage match

202409A

Abstract: 2425U SE2425U-EV1 Class B power amplifier, 2MHz se2425u
Contextual Info: DATA SHEET SE2425U : 2.4 GHz Bluetooth Power Amplifier IC Applications • •  Product Description tm Bluetooth wireless technology Class 1 USB dongles, PCMCIA, flash cards, Access Points Enhanced data rate Features         