1P RF Search Results

Transformer MCL 013

Abstract: ADT2-1T-1P
Contextual Info: Surface Mount ADT2-1T-1P+ ADT2-1T-1P RF Transformer 50Ω Ω 8 to 600 MHz Maximum Ratings Features Operating Temperature Storage Temperature RF Power DC Current -20°C to 85°C -55°C to 100°C 1W 30mA Pin Connections PRIMARY DOT PRIMARY SECONDARY DOT SECONDARY

Contextual Info: Surface Mount ADT2-1T-1P+ ADT2-1T-1P RF Transformer 50Ω 8 to 600 MHz Maximum Ratings Operating Temperature Storage Temperature -20°C to 85°C -55°C to 100°C RF Power 1W DC Current 30mA Pin Connections PRIMARY DOT PRIMARY SECONDARY DOT SECONDARY SECONARY CT

ADT2-1T-1P

Abstract: ADT2-1T
Contextual Info: Surface Mount ADT2-1T-1P+ ADT2-1T-1P RF Transformer 50Ω 8 to 600 MHz Maximum Ratings Operating Temperature Storage Temperature -20°C to 85°C -55°C to 100°C RF Power 1W DC Current 30mA Pin Connections PRIMARY DOT PRIMARY SECONDARY DOT SECONDARY SECONARY CT

Contextual Info: Surface Mount ADT2-1T-1P+ ADT2-1T-1P RF Transformer 50Ω 8 to 600 MHz Maximum Ratings Operating Temperature Storage Temperature Features -20°C to 85°C -55°C to 100°C RF Power 1W DC Current 30mA Permanent damage may occur if any of these limits are exceeded.

ADT2-1T-1P

Contextual Info: Surface Mount ADT2-1T-1P+ ADT2-1T-1P RF Transformer 50Ω 8 to 600 MHz Maximum Ratings Features Operating Temperature -20°C to 85°C Storage Temperature -55°C to 100°C RF Power 1W DC Current 30mA Permanent damage may occur if any of these limits are exceeded.

Contextual Info: Surface Mount ADT2-1T-1P+ ADT2-1T-1P RF Transformer 50Ω 8 to 600 MHz Maximum Ratings Operating Temperature Storage Temperature -20°C to 85°C -55°C to 100°C RF Power 1W DC Current 30mA Permanent damage may occur if any of these limits are exceeded. Pin Connections

MCP2021

Contextual Info: MCP2021/2/1P/2P LIN Transceiver with Voltage Regulator Features: Description: • The MCP2021/2/1P/2P are Compliant with LIN Bus Specifications 1.3, 2.0, and 2.1 and are Compliant to SAE J2602 • Support Baud Rates up to 20 kBaudwith LIN-compatible Output Driver

Contextual Info: THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO RF INDUSTRIES, ANY UNAUTHORIZED USE OF THIS DRAWING IS EXPRESSLY PROHIBITED WITHOUT WRITTEN PERMISSION FROM RF INDUSTRIES. ANY VIOLATION IS PUNISHABLE UNDER U.S. COPYRIGHT LAWS. RFB-1124-1P paptno DESCRIPTION

Transformer ADT2

Abstract: ADT2-1T-1P
Contextual Info: RF Transformer ADT2-1T-1P Typical Performance Data FREQUENCY AVERAGE INSERTION LOSS INPUT RETURN LOSS AMPLITUDE UNBALANCE PHASE UNBALANCE MHz (dB) (dB) (dB) (deg) 8 10 16 59 100 200 300 400 500 600 0.74 0.72 0.65 0.54 0.56 0.79 1.02 1.05 1.09 1.13 14.43

D-76181

Abstract: a5e000 siemens D-76181 siemens D-76181 manual ET200M circuit diagram for 24V automatic battery charger D-76181 manual Siemens PT100 temperature sensor RTD PT100 connected principle 1PA5E00054075
Contextual Info: SITRANS TW Instruction Manual de/en 03/2004 Instruction Manual (de/en) Edition 03/2004 @1PA5E00054075@ 1P A5E00054075 sitrans tw Siemens AG Bereich Automation and Drives Geschaeftsgebiet Process Instrumentation and Analytics D-76181 Karlsruhe www.siemens.com/processinstrumentation

Transformer ADT2

Abstract: ADT2-1T ADT2-1T-1P
Contextual Info: RF Transformer ADT2-1T-1P+ Typical Performance Data FREQUENCY AVERAGE INSERTION LOSS INPUT RETURN LOSS AMPLITUDE UNBALANCE PHASE UNBALANCE MHz (dB) (dB) (dB) (deg) 8 10 16 59 100 200 300 400 500 600 0.74 0.72 0.65 0.54 0.56 0.79 1.02 1.05 1.09 1.13 14.43

Transformer ADT2

Contextual Info: RF Transformer ADT2-1T-1P Typical Performance Curves Input Return Loss 0.3 2 0.4 4 Input Return Loss dB Average Insertion Loss (dB) Average Insertion Loss 0.2 0.5 0.6 0.7 0.8 6 8 10 12 0.9 14 1.0 16 1.1 18 1.2 20 50 100 150 200 250 300 350 400 450 500 550

A40206

Contextual Info: MODEL KBAC-29 1P SUPPLEMENT IMPORTANT: The KBAC Series Installation and Operation Manual (Part No. A40206) must be read and understood before attempting to operate this drive. For further assistance, contact our sales Department at 954-346-4900 or Toll Free at 800-221-6570 (outside Florida).

ADT2-1T-1P

Contextual Info: RF Transformer ADT2-1T-1P+ Typical Performance Curves Input Return Loss 0.3 2 0.4 4 Input Return Loss dB Average Insertion Loss (dB) Average Insertion Loss 0.2 0.5 0.6 0.7 0.8 6 8 10 12 0.9 14 1.0 16 1.1 18 1.2 20 50 100 150 200 250 300 350 400 450 500 550

FQFP-16

Abstract: AM59-0028
Contextual Info: 250 mW L-Band Power Amplifier, 1.435 - 1.525 GHz Preliminary AM59-0028 V 1P.00 Features • • • • • OUTLINE DRAWING High Linear Gain: 32 dB typ. High Saturated Output Power: +24 dBm typ. High Power Added Efficiency: 34% typ. 50 Ohm Input/Output Matched

0.18 um CMOS Spiral Inductor technology

Abstract: TSMC+rf+cmos+0.18+um
Contextual Info: Standard Features • • • • • • • 1.8V CMOS Transistors High Value Poly Resistors N+ & P+ S/D Resistors Low Value Poly Resistor Standard Poly Implant Resistor Multilevel Metallization 1P/4M Non-epi 200 mm Wafer Optional Features • • • •

Contextual Info: High IP3 Mixer, 235 - 245 MHz V 1P.00 MAMXES0103 Preliminary Features SM2 n Very High IP3, >+30.0 dBm n Small SMT footprint n +17 dBm LO Drive Description M/A-COM’s MAMXES0103 uses a novel FET design to achieve very high linearity without external biasing.

Contextual Info: High Output IP3 Driver Amplifier, 1700 - 2500 MHz Preliminary MAAMSS0007 V 1P.00 Features n Greater than 40 dBm Output IP3 n Greater than 20 dBm P1dB n Chip Scale Leadless Package n Single Positive Supply Voltage Description M/A-COM’s MAAMSS0007 Amplifier is a high linearity

5 Watt S-Band Power Amplifier

Abstract: 2 Watt S-Band Power Amplifier s-band 50 Watt power amplifier S-band mmic Watt AM42-0055 CR-15 amplifier 1000 watt HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz S-Band Power Amplifier
Contextual Info: 1 Watt/2 Watt S-Band Power Amplifier AM42-0055 2.2 - 2.4 GHz V 1P.00 Preliminary Features OUTLINE DRAWING • High Linear Gain: 29 dB typ. • High Saturated Output Power: +33 dBm typ. • 50 Ohm Input/Output Broadband Matched 1 -C.70 .530 .085 10 10X .050 MIN.

Contextual Info: MOTOROLA O rder this docum ent by M TSF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M T S F 1P 02H D Medium Power Surface Mount Products TM OS Single P-Channel Field E ffect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs

diplexer gsm umts

Abstract: diplexer gsm DCS MASWSS0055 GSM 300 for c9 Tx, RX SHUNT16
Contextual Info: 2V Dual Mode WCDMA & Triple Band GSM/ V 1P.00 DCS/PCS SP6T Switch 0.5 - 2.0 GHz Features 5 mm FQFP-N, 20-Lead n GSM Power Handling with +2.0V Control Voltage n Low Power Consumption. Less than 1 µA in Rx Mode n Integrated Low Loss Diplexer n Integrated Decoder

Contextual Info: 1 Watt/2 Watt S-Band Power Amplifier AM42-0055 2.2 - 2.4 GHz V 1P.00 Preliminary Features OUTLINE DRAWING 1 • High Linear Gain: 29 dB typ. • High Saturated Output Power: +33 dBm typ. • 50 Ohm Input/Output Broadband Matched -C.70 .530 .085 10 10X .050 MIN.

Contextual Info: T O S H IB A URSF05G49-1 P,URSF05G49-3P,URSF05G49-5P TOSHIBA THYRISTOR SILICON PLANAR TYPE URSF05G49-1P, URSF05G49-3P, URSF05G49-5P Unit in mm LO W PO W ER SWITCHING AND CONTROL APPLICATIONS. Repetitive Peak Off-State Voltage : V jjr m Repetitive Peak Reverse Voltage : V r r m > = 400V

HP8563E

Abstract: FM transmitter module fm transmitter HP-8563E
Contextual Info: 250 mW Lower S-Band FM Transmitter, 2.2-2.3 GHz V 1P.00 MA05935-XX Preliminary Features • • • • • • • • • OUTLINE DRAWING 1,2,3 FM transmitter with PLL, VCO and PA devices 3 Volt operation Parallel hard-wired frequency selection Choice of 16 frequency channels @ 1MHz spacing