1P NPN Search Results

Contextual Info: S E V IC C3MDUCTtZSR FM B2222A FFB2222A M M PQ2222A E2 C2 SC70-6 Mark: .1P Mark: .1P NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

FB222

Abstract: SOIC1
Contextual Info: éùxim jéM w . « $ * # Discrete POW ER & Signal _ _ Technologies i ùiOiài FMB2222A / FMB2222A FFB2222A FFB2222A man:- m k. MMPQ2222A E2 C1 / MMPQ2222A C2 B1 pin#1 E1 pin#1 B1 SC70-6 SuperSOT -6 M a rk : .1P M a rk : .1P SOIC-16 C1 NPN Multi-Chip General Purpose Amplifier

1P NPN

Abstract: FFB2222A FMB2222A MMPQ2222A SC70-6 SOIC-16
Contextual Info: Is S'-^iC T Z3 NSCJLJC: * "T»»? FMB2222A MMPQ2222A C2 E1 C1 E1 pin#1 p-E2 B1 B2 % SC70-6 SuperSOT -6 Mark: .1P Mark: .1P / MMPQ2222A pin#1 • C1 SOIC-16 C1 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power am plifier and switch requiring collector

FFB2222A

Abstract: FMB2222A MMPQ2222A SC70-6 SOIC-16 C150F
Contextual Info: FMB2222A FFB2222A E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 B1 B2 E3 E4 B4 B2 B1 pin #1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .1P Mark: .1P C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector

MARKING 1P

Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Transistor hFE CLASSIFICATION Marking CE

Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
Contextual Info: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant

marking 1p sot23

Abstract: TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p
Contextual Info: MMBT2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features — Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) — MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

DS199

Contextual Info: FMMT2222 FMMT2222A S0T23 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2222 - 1B FMMT2222A - 1P FMMT2222R - 2P FMMT2222AR - 3P ABSOLUTE MAXIMUM RATINGS SY M B O L PAR AM ETER Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage

kst2222a

Contextual Info: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage

UTC 225

Contextual Info: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE

KST2222A

Abstract: transistor kst2222a
Contextual Info: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage

1P NPN

Abstract: MMBT2222A 1P SOT-23 MMBT2222A UTC
Contextual Info: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE

PT 1300 phototransistor

Contextual Info: Technical Data Sheet Opto Interrupter ITR8010 █ Features ․Fast response time ․High analytic ․Cut-off visible wavelength 1p=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version █ Descriptions ․The ITR8010 consist of an infrared emitting diode and an NPN silicon phototransistor,

Contextual Info: S E M IC O N D U C T O R . PN930 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1p to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum RatinQS

Contextual Info: S E M IC O N D U C T O R PN2484 MMBT2484 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1p to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

602 SOT

Abstract: MMBT2222A
Contextual Info: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBT2222A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration Top View 1P B E Electrical Characteristics @ 25°C Unless Otherwise Specified

Contextual Info: MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. C C E E SOT-23 Mark:1P C SOT-223 B Figure 1. MMBT2222A Device Package

PN2222A

Abstract: 339 SOT23-3 bf255
Contextual Info: PN2222A / MMBT2222A / PZT2222A PN2222A MMBT2222A PZT2222A C C E C B TO-92 B SOT-23 E B SOT-223 Mark: 1P E C NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.