1P NPN Search Results

FFB2222A

Abstract: FMB2222A MMPQ2222A SC70-6 SOIC-16 C150F
Contextual Info: FMB2222A FFB2222A E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 B1 B2 E3 E4 B4 B2 B1 pin #1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .1P Mark: .1P C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

kst2222a

Contextual Info: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage

UTC 225

Contextual Info: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE

PT 1300 phototransistor

Contextual Info: Technical Data Sheet Opto Interrupter ITR8010 █ Features ․Fast response time ․High analytic ․Cut-off visible wavelength 1p=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version █ Descriptions ․The ITR8010 consist of an infrared emitting diode and an NPN silicon phototransistor,

MMBT2222A

Abstract: PN2222A PZT2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol

Contextual Info: fTechnical Data Sheet Opto Interrupter ITR9813 █ Features ․Fast response time ․High analytic ․Cut-off visible wavelength 1p=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version █ Descriptions ․The ITR9813 consist of an infrared emitting diode and

transistor 2222a to-92

Abstract: 2222A fairchild transistor pn 2222a transistor C 6092 transistor 2222a NPN2222A PN2222A NPN SMALL SIGNAL PSPICE
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol

TMPTA06

Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560
Contextual Info: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V|BR CBO V|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE

SOT-23 EBC

Abstract: MMBT2222A PN2222A PZT2222A IC 7403 mark PD sot 23 PN222
Contextual Info: MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 Mark:1P EBC C SOT-223 B B NPN General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. Absolute Maximum Ratings * Ta=25°C unless otherwise noted

TF411

Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
Contextual Info: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and

2222A fairchild

Abstract: 22222a 2222a sot223 PN2222ABU SOT-23 EBC 2222A to-92 npn PN2222ANLbu
Contextual Info: MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 Mark:1P EBC C SOT-223 B B NPN General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. Absolute Maximum Ratings * Ta=25°C unless otherwise noted

Contextual Info: FMMT2222 FMMT2222A S 0 T 2 3 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2222 FM M T2222A FMMT2222R FMMT2222AR - IB 1P 2P 3P ABSOLUTE M A X IM U M RATINGS SYM BOL PARAMETER C ollector-B ase V oltage C o llecto r-E m itte r V oltag e E m itter-B ase V oltag e

SMBT4401

Abstract: SMBT5401
Contextual Info: SURGE SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - TO-236 PACKAGE SURGE PART NUMBER SMBT2222A SMBT3904 SMBT4401 SMBTA05 SMBTA06 SMBT5551 SMBTA42 V CEO M arking C ode Volts 1P 40 o p e r a t i n g /S T O R A G E TE M P E R A T U R E R ANG E - 5 5 3C to + 1 5 0 X

FAIRCHILD SOT-223 MARK

Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

transistor BR A 94

Abstract: bcw 25 transistor bcw 94 b transistor A 94 bcw 95 transistor transistor BCW 94 c bcw94b BCW95 BCW95B bcw94A
Contextual Info: BCW94 A.B.C BCW95A.B NPN SILICO N TRANSISTOR, EPIT A X IA L PLANAR T R A N S IS T O R N P N S IL IC IU M , P L A N A R E P IT A X IA L • LF Amplification Amplification B F CE0 I 40 V BCW 94 160 V BCW 95 ■c °<4 A h ,1P 100-200 (A <B) (C) (1 5 0 m A 7 w iS 1 5 0 ' 3 0 0

LMBT2222ATT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.

Contextual Info: M ITSUBISHI RF POW ER TRAN SISTO R 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE D RAW IN G D im ensions in mm 2 S C 3 4 0 4 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for V H F power amplifier applications. FEATU RES

LMBT2222AWT1G

Abstract: marking 1p npn transistor 1P F
Contextual Info: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount

Contextual Info: MMBT2222A 300mW, NPN Small Signal Transistor SOT-23 Small Signal Product Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications. 1

2SC1970

Abstract: 2sc1970 transistor T-30 parameters S transistor NPN
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1970 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers on V H F band m obile radio applications. 9.1 ± 0 .7

TRANSISTOR 1P

Abstract: Transistor MARKING 1P 1p TRANSISTOR marking 1p transistor transistor 1P F marking transistor 1p 1 TK2222ATTD03
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE)