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    1NS826 Datasheets Context Search

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    1N5824

    Abstract: 1n5823 1N5825 1N5827
    Contextual Info: D f T | L ,3 b 7 H 5 5 6367255 0 0 3 flim MOTOROLA 1 SC DIODES/OPTO 34C 38141 D T -6 3 -Ò 5 SILICON R ECT IFIER D ICE (continued) IC5825 DIE NO. LINE SOURCE — DRL756 This die provides performance equal to or better than that of the following device types:


    OCR Scan     		drl7561n58231n58241n5825+51ns8261n58271n582bic5825119x119m PDF

    SSF164

    Contextual Info: Schottkv Rectifiers Part Number ! i SSF1625 MS1625 SSF1635 SSF1635 USD1635ACT USD735 SCH USD735C USD935 MS1E35 SSF1640 USD740 USD740C USD940 SSF1645 SSF1645 USD164SACT USD745 USD745C USD945 MS1645 SSF1680 MS1680 SSF1690 MS1690 MS16100 USD6503 FST202S FST2030


    OCR Scan     		ssf1625ms1625ssf1635usd1635act+6usd735usd735cusd935ms1e35ssf1640ssf164 PDF

    ST T4 0570

    Abstract: 2N4233A 2N4231A transistor 2N6312 Sm T4 0570
    Contextual Info: 2N4233A Œ i / I O S r 5.0 AMPERE SIUCON POWER TRANSISTOR MEDIUM-POWER SILICON TRANSISTOR 80 V O L T S 75 W A T T S .designed for general-purpose power amplifier and switching applications. • Low Collector-Emitter Saturation Voltage VCE sat = 0.7 Vdc (Max) @ lc = 1.5 Ade


    OCR Scan     		2n4233a2n4231a2n63122n6314+51ns826msd6100st t4 0570transistor 2n6312sm t4 0570 PDF