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    1N65A Search Results

    1N65A Datasheets (3)

    Wuhan Xinyuan Semiconductor Co Ltd
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge CWS11N65AX
    Wuhan Xinyuan Semiconductor Co Ltd 650V N-Channel Super Junction MOSFET with 360 mOhm RDS(on) and 11A continuous drain current, available in TO-252, TO-220, TO-220F, and TO-263-2L packages for high-efficiency power applications. Original PDF
    badge CWS11N65AC
    Wuhan Xinyuan Semiconductor Co Ltd 650V N-Channel Super Junction MOSFET with 360 mOhm RDS(on) and 11A continuous drain current, available in TO-252, TO-220, TO-220F, and TO-263-2L packages for high-efficiency power applications. Original PDF
    badge CWS11N65AF
    Wuhan Xinyuan Semiconductor Co Ltd 650V N-Channel Super Junction MOSFET with 360 mOhm RDS(on) and 11A continuous drain current, available in TO-252, TO-220, TO-220F, and TO-263-2L packages for high-efficiency power applications. Original PDF
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    1N65A Price and Stock

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    Micro Commercial Components MSJP11N65A-BP

    N-CHANNEL MOSFET,TO-220
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    DigiKey MSJP11N65A-BP Tube 4,971 1
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    Micro Commercial Components MSJPF11N65A-BP

    N-CHANNEL MOSFET,TO-220F
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    Micro Commercial Components MSJU11N65A-TP

    N-CHANNEL MOSFET, DPAK
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    DigiKey () MSJU11N65A-TP Digi-Reel 4,196 1
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    1N65A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N65A Power MOSFET 0.5A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N65A is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original
    1N65A 1N65A QW-R502-584 PDF

    12A 650V MOSFET

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N65A Power MOSFET 0.5A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N65A is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original
    1N65A 1N65A QW-R502-584 12A 650V MOSFET PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N65A Power MOSFET 0.5A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N65A is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original
    1N65A 1N65A QW-R502-584 PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    8N65

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices


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    IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65 PDF