1N582 Search Results

1N5822 data sheet

Abstract: 1N5820 1N5820-1N5822 1N5821 1N5822 1n58201
Contextual Info: 1N5820 - 1N5822 3.0A SCHOTTKY BARRIER RECTIFIERS Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

Contextual Info: Formosa MS Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2

Contextual Info: 1N5820 thru 1N5822 REVERSE VOLTAGE FORWARD CURRENT SCHOTTKY BARRIER RECTIFIERS -20 to 40 Volts -3.0 Amperes D O -27 FEATURES • Metal-Semiconductor junction with guard ring • Expitaxial construction • Low forward voltage drop • High current capability

Contextual Info: DIGITRON SEMICONDUCTORS 1N5826-1N5828 15 AMP SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol Characteristics Value TSTG Storage Temperature Range -55 to +175°C TJ Operating Junction Temperature Range -55 to +150°C RθJC Maximum Thermal Resistance 1.6°C/W Junction to case

Contextual Info: DIGITRON SEMICONDUCTORS 1N5820-1N5822 3 AMP SCHOTTKY RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MECHANICAL CHARACTERISTICS

Contextual Info: MCC TM Micro Commercial Components 1N5820 THRU 1N5822
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

Contextual Info: VS-1N5820, VS-1N5820-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical

Contextual Info: Bulletin PD-20647 rev. C 11/04 1N5820 SCHOTTKY RECTIFIER 3.0 Amp Major Ratings and Characteristics Description/ Features Characteristics Values Units IF AV Rectangular 3.0 A VRRM 20 V IFSM @ tp = 5 µs sine 450 A 0.475 V - 65 to 150 °C waveform VF @ 3 Apk, TJ = 25°C

1N5820

Abstract: 1N5821 1N5822
Contextual Info: 1N5820 - 1N5822 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Ampere DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop

15KV

Abstract: 1N5820 1N5821 1N5822-E
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N5820-E thru 1N5822-E 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory * * * * * Reverse Voltage 20 to 40V Forward Current 3.0A Flammability Classification 94V-0 Low power loss,high efficiency

1N5824

Contextual Info: 12V Unregulated DC Input 5 ov "I 680 juF I— 0N /0F F 3 GND T " 1N5824 220 jjl F Regulated O utput 3A Load

1N5821

Abstract: DB-113
Contextual Info: 1N5821 THRU 1N5822 3.0AMP. Schottky Barrier Rectifier VOLTAGE:30 TO 40V CURRENT:3.0A AXIAL LEAD DO-201AD Specification Features: Case: Epoxy, Molded DEVICE MARKING DIAGRAM Weight:1.2Gram Approximately 1N582X KEL High current capability,Low Forward Voltage Drop

1N5822U

Contextual Info: 1N5822U Aerospace 40 V power Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B

1n5830

Abstract: 1n5831 1N5829
Contextual Info: MCC 1N5829 thru 1N5831
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 25 Amp Schottky Barrier Rectifier 20 to 35 Volts Metal of siliconrectifier, majonty carrier conducton

1N5820

Abstract: 1N5821 1N5822
Contextual Info: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency

5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822

Abstract: 1N5820 1N5822 data sheet 1N5821
Contextual Info: 1N5820 thru 1N5822 SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20-40 VOLTS Mechanical Data: *Case:JEDEC DO-201AD Molded Plastic *Polarity:Colar Band Denotes Cathode *Weight:1.1grams *Mounting Positon: Any DO-201AD DO-201AD Outline Dimensions DO-201AD 25.40 WEITRON

1N5822 data sheet

Abstract: 1N5820 1N5821 1N5822
Contextual Info: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes FEATURES DO-201AD 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0

1N5821

Abstract: 1N5822 data sheet 1N5820 1N5822
Contextual Info: 1N5820 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N5822 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Amperes FEATURES * * * * * * Low switching noise Low forward voltage drop High current capability High switching capabitity

Contextual Info: 1N5820 thru 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • • • • • • • • DO-201AD PRIMARY CHARACTERISTICS IF AV 3.0 A VRRM 20 V, 30 V, 40 V IFSM 80 A VF 0.475 V, 0.500 V, 0.525 V TJ max. 125 °C Guardring for overvoltage protection

1N5822 PACKAGE

Abstract: 1N5820 1N5821 1N5822
Contextual Info: 1N 5820 TH RU 1N5822 3 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Amperes _ FEATURES_ D O -201 A D • High surge cu rre n t capability. • Plastic package has U nderw riters Laboratory FlammabHity C lassification 9 4 V -0 utilizing

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

Contextual Info: 1N5822+JANTXV Diodes General Purpose Schottky Rectifier Military/High-RelY I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)90Ô V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.80¥ V(FM) Max.(V) Forward Voltage950m @I(FM) (A) (Test Condition)9.0

Contextual Info: 1N5820 thru 1N5822 Schottky Barrier Rectifiers Reverse Voltage 20 to 40V Forward Current 3.0A Feature & Dimensions * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage high frequency inverters,