1N5409 Search Results

Contextual Info: 1N5400 thru 1N5409 General Purpose Plastic Rectifiers Reverse Voltage 50 to 1200V Forward Current 3.0A Feature * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage

1N5409

Contextual Info: 1N5409 SILICON RECTIFIER-VERY FAST SWITCHING DESCRIPTION: The 1N5409 is Designed for General Purpose Very Fast Switching Power Supply Applications. PACKAGE STYLE DO- 5 MAXIMUM RATINGS LO CN O O « ^ CC 0 0 'L CO í < Io V rw M 175 V Tj -65 0C to +175 0C Ts tg

Contextual Info: 1N5409 asi SILICON RECTIFIER-VERY FAST SWITCHING DESCRIPTION: The 1N5409 is Designed for General Purpose Very Fast Switching Power Supply Applications. MAXIMUM RATINGS lo 47 A RMS @ Tc = 25 °C 30 A (AVG)@ T c = 100 °C V rw M 175 V Tj -65 °C t o +175 °C

1Ns408

Abstract: in5408g IN4007g in400 IN4004 IN4005 1ns408g IN4007 IN5407 IN4002
Contextual Info: E I C SEMICONDUCTOR INC LflE D • =100247=1 DOOOOlfl M7fi ■ EICS Glass passivated rectifier diodes. 1 Amp. to 3 Amps. T he p lastic m ate ria l c a rrie s U /L re co g n itio n 94V -0 Peak In v e rs e V oltage A v e ra g e R ectified C u rre n t T ype W v

BY250

Abstract: IN4000 silicon diode DIODES BY250 1N4000 silicon diodes IN5395 in4000 1N5409 by250 diode in5404 diode diode IN5399
Contextual Info: E I C S E M I C O N D U C T O R INC bflE D • ‘iOOSMTT O a O O a i O 142 ■ EICS Silicon rectifier diodes 1 Amp. to 3 Amps. T he p lastic m ate ria l c a r r ie s U /L re co g n itio n 94V-0. A v e ra g e R ectified C u rre n t Peak In v e rse V oltage

DRA402

Abstract: BYZ14 BYY15 SD041R04P SD040N04P DRA404 SD040n06p SD040N 10MA40 VBO20-04N01
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number >0 Part Number Manufacturer Max VRRM A 00 'FSM (A) VF IR IF Max @ 00 Test W VR 25 °C @ Test (A) (V) IR (A) T2 T Oper @ Test Max C) CO c Package Style General-Purpose, lo >= 25 A (Cont'd) 5 10 10MA10 G4B3 1N1185A

Contextual Info: 16011 Footh ill Boulevard lrw indale. C A 9 1 7 0 6 EIC Semiconductor, Inc. Tel: 8 1 8 9 6 9 -1 3 1 ? F A X : (8 1 8 )9 6 9 -0 9 6 5 The plattic material cam e» U /L recognition 94V -0. TY PE A venge Rectified Current IFiAV) T i (A) | ( -C) Peak Invent

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1n5409

Abstract: IN5409
Contextual Info: EDAL INDUSTRIES INC 45E J> 30^571^ 000033^ *117 • EDI­ T T O / - i <7 HEX. 11/16* A C R O SS FLATS t Bv P IV_ 500V ADA. Io . xs _ o <2 C m CASE AMPS 1000 v _ Vf _ 40A @ C 100 CASE o Ir _ 3.0mA @ _ 200V © C 1. 00. o <2 STYLE C © D0-5 I1 \ I i | »

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any