1N53 ON Search Results

1N5337B

Abstract: 1N53 ma 1N5364B 1N53 1N5333B 1N5334B 1N5335B 1N5336B 1N5338B 1N5339B
Contextual Info: LESHAN RADIO COMPANY, LTD. 5W 1N53*B Series Zener Diodes . 5W DO-15 . Zener voltage regulator diodes . Modled plastic zener diodes . Complete voltage range_3.3 to 200volts . We declare that the material of product compliance with RoHS requirements. 1N53* B Series

1N53 ma

Abstract: 1N536 1N5333B-D 1N53XX 1N5334B
Contextual Info: 1N53 Series 5 Watt Surmetict 40 Zener Voltage Regulators This is a complete series of 5 Watt Zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial lead,

1N5349B

Abstract: 1N5334B
Contextual Info: 1N53 Series 5 Watt Surmetict 40 Zener Voltage Regulators This is a complete series of 5 Watt Zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial lead,

Contextual Info: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat * Glass-plastic encapsulation

Contextual Info: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A

1N53

Abstract: 1N5391GP 1N5399GP DO-204AC JESD22-B102 J-STD-002
Contextual Info: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than

Contextual Info: LESHAN RADIO COMPANY, LTD. 1N5391G thru 1N5399G 1.FEATURES General Purpose Plastic Rectifiers * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Reverse Voltage 50 to 1000V Forward Current 1.5A * Construction utilizes void-free molded plastic technique

Contextual Info: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than

1N53

Abstract: 1N5391G 1N5399G
Contextual Info: 1N5391G THRU 1N5399G GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High temperature metallurgically bonded construction

Contextual Info: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A

1N53

Abstract: 1N5391G 1N5399G
Contextual Info: 1N5391G - 1N5399G 1.5A GLASS PASSIVATED RECTIFIER Features • · · · · · Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current Plastic Material - UL Flammability

1N53

Abstract: 1N5391G 1N5399G
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N5391G thru 1N5399G 1.FEATURES General Purpose Plastic Rectifiers * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Reverse Voltage 50 to 1000V Forward Current 1.5A * Construction utilizes void-free molded plastic technique

1N53

Abstract: 1N5391GP 1N5399GP DO-204AC
Contextual Info: 1N5391GP THRU 1N5399GP Glass Passivated Junction Rectifier Reverse Voltage 50 to 1000 V Forward Current 1.5 A DO-204AC DO-15 Features 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. * d e t n e t a P 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA.

1N53

Abstract: 1N5391G 1N5399G
Contextual Info: 1N5391G - 1N5399G 1.5A GLASS PASSIVATED RECTIFIER Features • · · · · · Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current Plastic Material - UL Flammability

1N5391GP

Abstract: 1N5399GP DO-204AC JESD22-B102D J-STD-002B 94GP
Contextual Info: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation

1N5391GP

Abstract: 1N5399GP DO-204AC J-STD-002 1N53 ON
Contextual Info: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A

Contextual Info: 1N5391GPTHRU 1N5399GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current DO-2Q4AC 1.5 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically

1N53

Abstract: 1N5391GP 1N5399GP DO-204AC
Contextual Info: 1N5391GP THRU 1N5399GP GLASS PASSIVATED JUNCTION RECTIFIER * Reverse Voltage - 50 to 1000 Volts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction

1N539

Abstract: 1N5391
Contextual Info: 1N5391 SERIES PLASTIC SILICON RECTIFIER VOLTAGE 50 to 1000 Volts CURRENT 1.5 Amperes FEATURES 0.034 0.86 0.028(0.71) 1.0(25.4)MIN. • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound.

5W zener sgs-thomson

Abstract: CB417 marking 683 zener diode 1n5359b 1N5388B zener 35b 1N5335B 1N5342B 5w zener 1N5339B STMICROELECTRONICS
Contextual Info:  1N5335B / 1N5388B 5W ZENER DIODES FEATURES VOLTAGE RANGE : 3.9 V to 200 V HERMETICALLY SEALED PLASTIC CASE HIGH SURGE CAPABILITY : 180 W 8.3 ms . DESCRIPTION CB417 5 W Zener diodes. ABSOLUTE RATINGS (Tamb = 25°C) Symbol P Tstg Tj TL Parameter Power dissipation on infinite heatsink

1N23 diode

Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
Contextual Info: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for

1N21* Diode Detector Holder

Abstract: MA492C 1N23C diode MA41513 1N493C 1N23G Silicon Point Contact Mixer Diodes 1n415g jan-1n21we 1N23C
Contextual Info: Point Contact Mixer and Detector Diodes Features • PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT DETECTOR DIODES Description

JAN1N23WG

Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
Contextual Info: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED

1N23 diode

Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local