1N457 DIODE Search Results

1N457

Contextual Info: 1N457 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N457 Availability Online Store Diodes

equivalent diode for 1n457

Abstract: 1N457 1N457 equivalent 1N457A JAN1N457 marking blue
Contextual Info: FEATURES 1N457 • • • • • 1N457 AVAILABLE AS 1N457A, & AS JAN1N457 PER MIL-PRF-19500/193 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine, 8.3mS:

1n457

Contextual Info: 1N457/A 1N457/A DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage Parameter 70 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg

1N457

Abstract: equivalent diode for 1n457 1n457 equivalent 7121 1N457A
Contextual Info: 1N457/A 1N457/A DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage Parameter 70 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg

diode cross reference 1N457

Abstract: 1n457
Contextual Info: 1N457/A 1N457/A DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage Parameter 70 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg

Contextual Info: 1N457/A 1N457/A DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage Parameter 70 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg

1n456

Abstract: 25nA 1N458 1N457
Contextual Info: DIODE 1N456 1N457; JAN 1N457 1N458; JAN 1N458 1N459; JAN 1N459 Low Current FEATURES • Metallurgical Bond • Qualified to MIL-S-1950W193 • Planar Passivated Chip • DO-7 Package DESCRIPTION General purpose low current diode with high reliability characteristics

1N457

Abstract: 1n457 unitrode
Contextual Info: M ICROSEMI CORP/ ÜIATERTOUN 50E B • 0012350 3Ö1 M U N I T 1N456 1N457; JAN 1N457 1N458; JAN 1N458 1N459; JAN 1N459 DIODE Low Current 'T-ot-oci DESCRIPTION General-purpose low current diode with high reliability characteristics FEATURES • Metallurgical Bond

1N457

Abstract: 1N SERIES DIODE
Contextual Info: 1N457/A 1N457/A DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage Parameter 70 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg

1N5426

Abstract: 1N5208 AMERICAN POWER DEVICES 1n914
Contextual Info: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current

equivalent diode for 1n457

Contextual Info: 1N457A thru 1N459A Qualified Level: JAN Switching Diode Available on commercial versions Qualified per MIL-PRF-19500/193 DESCRIPTION These popular 1N457 – 1N459 series of JEDEC registered switching/signal diodes are metallurgically bonded. These small low capacitance diodes with very fast switching speeds

ALL4150

Abstract: 1N4606
Contextual Info: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current

diode IN457

Abstract: JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier
Contextual Info: MIL SPECS IC|0Q0D1SS 0 Q QS 2M Q B | / NOTICE OF VALIDATION INCH-POUND MIL-S-19500/193C ER NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N457, 1N458, AND 1N459 Military specification MIL-S-19500/193C(ER), dated 15 September

1n457

Abstract: n456a DSAIH00025333 1N456A
Contextual Info: B K C INTERNATIONAL □ 3E D I 117^^03 □□□□275 2 7 - - Ó / - Ó LOW LEAKAGE DIODES 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A ABSOLUTE MAXIMUM RATINGS • l„ • C 25 nA @ WIV 6.0 pF Temperatures Storage Temperature Range Maximum Junction Operating Temperature

1N456

Abstract: 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A Scans-0016000
Contextual Info: Diode Data NATL SEMICOND DISCRETE HE D [ faSQliaO 0037GQ1 7 | Low Leakage Diodes Glass Package Device No. 1N456 Package No. DO-35 VRRM V Min •r nA Max 30 25 Vr V If mA C PF Max 1.0 40 10 VF v Min 25 ® Max 1N456A DO-35 30 25 25 1.0 100 1N457 DO-35 70

fjt1101

Abstract: FJT1102 1N456A 1N459A FJT1100 1N456 1N457 1N457A 1N458 1N458A
Contextual Info: Device No. • Package No. Glass Package V RRM (V) c V F (nA) Min Max @ V R (V) (V) Min @ Max 'f (mA) (PF) Process No. Max 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125

23J2

Abstract: BAW32D BAY18 1N484 1n484a 1N456 1N457 1N461 1N462 1N483
Contextual Info: silicon signal diodes diodes de signal au silicium Type vF / v r -v r m >o m ax V max (m A) general purpose m ax (V) THOMSON-CSF iF |r (mA) m ax (nA) / C Styp m ax (pF) Vr (V) Casa usage général Tam b = 25°C 1N456 1N 456 A 1N457 1N 457 A 1N461 25 25- 30

1N458B

Abstract: 1N5426 AMERICAN POWER DEVICES 1n914 1N5208 1N444 1N456 1N456A 1N457 1N457A 1N458
Contextual Info: AMERIC AN POWER D EVICES 53E D • 0737135 00000E3 — 1 DO-35 Case Type Peak Inverse Voltage Minimum Forward Current @25°C 1N456 1N456A 1N457 1N457A 1N458 PIV V mA 30 30 70 70 150 40 @ 100 @ 20 @ 100 @ 7@ If @ V f V 1 1 1 1 1 Maximum Capacitance Maximum

1N4848

Abstract: 1N4868 1N4828 1N484 1N4858 1N456 1N456A 1N457A 1N458 1N458A
Contextual Info: Diode Data NATL SEMICOND DISCRETE H E D [ f c , 5 ai l 3D GQ37QQ1 7 Low Leakage Diodes Glass Package If mA C PF Max Proc No. 1.0 40 10 D2 1.0 100 VF V VRRM V Min •r nA Max DO-35 30 25 25 1N4S6A DO-35 30 25 25 1N457 DO-35 70 25 60 1.0 20 1N457A DO-35 70

1N459

Abstract: 1N456 1N457 IN456 IN457 J 1N456 1N458
Contextual Info: DIODE 1N456 JAN 1N457 JAN 1N458 JAN 1N459 Low Current DESCRIPTION G eneral p urp o se low c u rre n t d io d e w ith h ig h re lia b ility c h a ra c te ris tic s FEATURES • M e ta llu rg ic a l Bond • Q u a lifie d to MIL-S-19500/193 • P lanar P a ssivated C hip

1N457 tempco

Abstract: 1n457 equivalent equivalent diode for 1n457 925 pin-compatible 2N2219 2N2905 2N3964 AMS3100 AMS3100AM AMS3100BM
Contextual Info: Advanced Monolithic Systems AMS3100 ADJUSTABLE MICROPOWER VOLTAGE REFERENCE DIODE RoHS compliant FEATURES APPLICATIONS • Adjustable from 1.24V to 5.30V • Operating Current 10µA to 20mA • 1% and 2% Initial Tolerance • 1Ω Dynamic Impedance • Low Temperature Coefficient

equivalent diode for 1n457

Abstract: SE 442 1N457 equivalent 1N457 1N458 1N459 Diode Equivalent 1N458 equivalent diode for 1n458
Contextual Info: INCH-POUND MIL-PRF-19500/193F 2 November 2009 SUPERSEDING MIL-PRF-19500/193E 12 May 2006 The documentation and process conversion measures necessary to comply with this revision shall be completed by 2 February 2010. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER

Contextual Info: Advanced Monolithic Systems AMS285/AMS385 ADJUSTABLE MICROPOWER VOLTAGE REFERENCE DIODE RoHS compliant FEATURES APPLICATIONS • Adjustable from 1.24V to 5.30V • Operating Current 10µA to 20mA • 1% and 2% Initial Tolerance • 1Ω Dynamic Impedance • Low Temperature Coefficient

Contextual Info: Advanced Monolithic Systems AMS3100 ADJUSTABLE MICROPOWER VOLTAGE REFERENCE DIODE RoHS compliant FEATURES APPLICATIONS • Adjustable from 1.24V to 5.30V • Operating Current 10µA to 20mA • 1% and 2% Initial Tolerance • 1Ω Dynamic Impedance • Low Temperature Coefficient