1N371 Search Results

Contextual Info: 1N3717 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 4.7m Peak Curr. Tol.12m Total Cap. (F)25p Ip/Iv Min7.6 Vp65m Vv355m Fwd Volt @Ipeak510m Resist. Cutoff Freq3.4G Series Induct. (H).50n R(series) (Ohms).52 Neg Resist.24 Semiconductor MaterialGermanium

TUNNEL DIODE

Abstract: 1N3714 germanium TUNNEL DIODE tunnel diode specifications
Contextual Info: 1N3714 General Purpose Tunnel Diode 62.39 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3714 Online Store 1N3714 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits

Contextual Info: 1N3713+JAN Diodes General Purpose Tunnel Diode Military/High-RelY Ipeak Max. A 1.0m Peak Curr. Tol.25u Total Cap. (F)5.0p Ip/Iv Min7.0 Vp65m Vv355m Fwd Volt @Ipeak510m Resist. Cutoff Freq3.2G Series Induct. (H)500p R(series) (Ohms)1.7 Neg Resist.118 Semiconductor MaterialGermanium

Contextual Info: 1N3719+JAN Diodes General Purpose Tunnel Diode Military/High-RelY Ipeak Max. A 10m Peak Curr. Tol.25m Total Cap. (F)50p Ip/Iv Min7.0 Vp65m Vv355m Fwd Volt @Ipeak510m Resist. Cutoff Freq2.8G Series Induct. (H).50n R(series) (Ohms).36 Neg Resist.12 Semiconductor MaterialGermanium

1N3716

Abstract: diode germanium tu 38 f 1N3717 1N3714 1N3712 IN3712 diode germanium tu 38 e 1n3719 1N3715 1N3713
Contextual Info: Germanium Power Devices Corp. 1N3712-20 1H3713-21 4 Tunnel Diodes Specifications IN3712 through 1N3720 and 1N3713 through 1N3721 are Germanium Tunnel Diodes offering peak currents of 1.0, 2.2, 4.7,10, and 22 ma. These devices, which make use of the quantum mechanical tunneling phenom­

1N3716

Abstract: tunnel diodes LM390
Contextual Info: 1N3716 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N3716 Availability Online Store

Contextual Info: 1N3717+JAN Diodes General Purpose Tunnel Diode Military/High-RelY Ipeak Max. A 4.7m Peak Curr. Tol.12m Total Cap. (F)25p Ip/Iv Min7.6 Vp65m Vv355m Fwd Volt @Ipeak510m Resist. Cutoff Freq3.4G Series Induct. (H).50n R(series) (Ohms).52 Neg Resist.24 Semiconductor MaterialGermanium

tunnel diode

Abstract: 1N3718 Diode tunnel catalog "tunnel diode"
Contextual Info: 1N3718 General Purpose Tunnel Diode 39.00 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3718 Online Store 1N3718 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits

1N3712

Abstract: Tunnel Diode tunnel diodes
Contextual Info: 1N3712 General Purpose Tunnel Diode 59.00 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3712 Online Store 1N3712 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits

Tunnel diode

Abstract: 1N3713 tunnel diode 1N3713 Diode tunnel catalog 8598
Contextual Info: 1N3713 General Purpose Tunnel Diode 85.98 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3713 Online Store 1N3713 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits

9.1 zener

Abstract: 1N3691B zener diode 10w 710b 1N3675B 1N3676B 1N3677B 1N3678B 1N3679B 1N3681B
Contextual Info: Data Sheet Central" 1N3675B t h r u 1N3710B 1 .0W ZENER DIODE 6.8 VOLTS t o 200 VOLTS 5 % TOLERANCE S e m ic o n d u c to r C o rp . 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-41 Case Manufacturers of World Class Discrete Semiconductors

tunnel diode

Abstract: lm719 IN3717 tunnel diode application 1N3717 1N2719 1N3719 TUNNEL DIODE d 220 1N3713 1N3715
Contextual Info: I — fdlL-s-19500/269 NAVT IC2ctcber 196S bDLfTARV SPECIPfCATION SEMfC0NDUCT05f TYPES DEVICE, 1N3719, 1N3715, TuKNEL 1N3717, DIODE, 1N3719 AND 1N3721 . 1. SCOPE 1.1 Description. - TMsspecification cmer8tie deWlrquirements MIL-S-1 8500, except as otherwise

Contextual Info: 1N3719 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 10m Peak Curr. Tol.25m Total Cap. (F)50p Ip/Iv Min7.0 Vp65m Vv355m Fwd Volt @Ipeak510m Resist. Cutoff Freq2.8G Series Induct. (H).50n R(series) (Ohms).36 Neg Resist.12 Semiconductor MaterialGermanium

1N3719

Abstract: lN3715
Contextual Info: o MIL-s-19500/269 NAVY AMSNDMZNT 1 25 April 1966 MILITARY SPECIFICATION SEMICONDUCTORDEVICE, TUNNEL OIODE, TYPEs lN3713, lN3715, lN3717, 1N3719, ANO lN3721 IWs amendment forms a part of Military SpecificationMIL-S-19500/269 (NAVY), 1 October 1963. I Page 1: Delete “FSC 5960”

1N4742A JEDEC

Abstract: 1N4848 1N4752 1n4858 1N4742A 1N4841 1N4854 1N4838 1N4745A Zener C 211
Contextual Info: 1 WATT, M o l d e d JEDEC TYPE NUMBERt i 1N4728 1N4729 1N4730 1N4731 1N4732 1N4733 1N4734 1N4735 1N4736 1N4737 1N4738 1N4739 1N4740 1N4741 1N4742 1N4743 1N4744 1N4745 1N4746 1N4747 1N4748 1N4749 1N4750 1N4751 1N4752 1N4753 1N4754 1N4755 1N4756 1N4757 1N4758

1N4726

Abstract: 1N5349 1N3327 1N2826 1N3326 1M4558 1N3316 1N2814 1N4564 1N3307
Contextual Info: GUIDE TO AVAILABLE AXIAL LEADED ZENER DIODES Earty Industry Standard Early Industry Standard Low Noise Low Current Mil - Spec Low Current Low Noise 50 uA Low Current Low Leakage Mil - Spec Industry Standard Mil - Spec 400mw DO-35 Industry Standard Mil - Spec

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

Z82D5

Abstract: "Zener Diodes" 1n5048 1N5008 1N4189 1N4730 zener 1N4653 1N4671 1n4849 1N5012 1N4171
Contextual Info: GUIDE TO AVAILABLE AXIAL LEADED ZENER DIODES Pow er E arly In d u stry S ta n d a rd E arly In d u stry S ta n d a rd L o w N o ise L o w C u rre n t M il - S p e c L o w C u rre n t 50 u A Low Leakage L o w N o is e L o w C u rre n t M il - S p e c In d u stry

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BD400

Abstract: TD-429 1N3712 in3712 TD-427 TD-423 TD-437 TD-408 TD-401 TD-422
Contextual Info: TUNNEL DIODES MICROWAVE Cj :> Vp Vv Type’ Peak Current Typ. mA Peak Vo Itaiie Typ (mV) Valley Voltage Typ. (mV) V^ Forward Peak Voltage Typ. (mV) (Ip/lv) Peak to Valley Ratio Typ. —R Negative R e sista n ce Rs S e rie s R esista n ce Max. Junction C ap acitan ce

1N5048

Abstract: CZ5339B 1n5248 1N5349B DO-41 1N2990B 1N5042 1N5021A 1N4465 1N5025A 1N5041
Contextual Info: Zener Diodes POWER 250 mW CASE ZENER VOLTAGE 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.1 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 400 mW DO-35 GENERAL PURPOSE 1N702A 1N703A 1N704A 1N705A 1N706A LOW NOISE LOW LEVEL 1N4614

1N3714

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JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

1N4465

Abstract: 1N4189B 1N4705 1N5988B 1N6006B 1N4477 1N4460 1N5994B 1N4471 1N5995B
Contextual Info: zener Diodes POWER 400 mW 250 mW y ? DO-35 CASE LOW NOISE LOW LEVEL LOW LEVEL 1.8 1N4614 1N4678 2.0 1N4615 1N4679 2.2 1N4616 1N4680 2.4 1N4617 1N4681 ZENER VOLTAGE 2.7 GENERAL PURPOSE 1N702A 3.0 3.3 3.6 1N703A 3.9 4.3 1N704A 4.7 5.1 1N705A 5.6 6.0 1N706A LOW