1N 2002 DIODE Search Results

an7840

Abstract: AN-7840 7835 AN4111 AN7734 AN5510 1N4148TA AN-7850 AN4102 PSpice 1N4148
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current

AN4104

Abstract: Fairchild 1N4148 1N4148TA PSpice 1N4148 4148 t AN-42025 AN4111 ml2035 CIRCUIT diode do35 C 4148 1N4148 diode
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current

RD2.0FM

Abstract: C11531E RD10FM RD11FM RD120FM RD12FM RD13FM RD15FM RD16FM RD18FM
Contextual Info: DATA SHEET ZENER DIODES RD2.0FM to RD120FM ZENER DIODES 1 W 2 PIN POWER MINI MOLD PACKAGE DIMENSIONS DESCRIPTION Unit: mm Type RD2.0FM to RD120FM series are 2 pin power mini mold package zener diodes possessing an 4.7 ±0.3 allowable power dissipation of 1 W.

HA1930

Contextual Info: O ^ G S D elect; HERMETICALLY SEALED G L A SS PACKAGED TUNING DIODES HYPERABRUPT Wr ABRUPT E L E C T R IC A L CH A R A CTER ISTICS T a = 25° C unless otherwise noted GENERAL APPLICATIONS Oiode Cap. IC T)* pf Q4 $ 50 MHz RATIO C2/C20 min/typ NO LOW INDUCTANCE

B2 Zener

Abstract: B1 6 zener zener diode numbering system RD18SB rd 62 nec zener RD110s RD5.1S RD5.1S(B)-T1-A/1431T data sheet zener diode mv 5 MARK b3 zener diode
Contextual Info: DATA SHEET ZENER DIODES RD2.0S to RD120S ZENER DIODES 200 mW 2 PIN SUPER MINI MOLD PACKAGE DIMENSIONS DESCRIPTION in millimeter Type RD2.0S to RD120S series are 2 pin super mini power dissipation of 200 mW. 0.3±0.05 1.25±0.1 mold package zener diodes possessing an allowable

1n35

Abstract: Fairchild 1N3595
Contextual Info: 1N3595 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current

BF265

Abstract: 29v33
Contextual Info: MAX3880 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic

1N3595

Abstract: Fairchild 1N3595
Contextual Info: 1N3595 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current

fairchild 1n4150

Abstract: FAIRCHILD DIODE ultra fast diode 1N4150
Contextual Info: 1N4150 / FDLL4150 COLOR BAND MARKING 1ST BAND 2ND BAND DEVICE FDLL4150 BLACK ORANGE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics.

Contextual Info: MCL-SS400 SILICON EPITAXIAL PLANAR DIODES High-speed Switching Applications LS-31 Features • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package • Extremely small surface mounting type. EMD2 • High Speed (trr = 1.2ns Typ.) • High reliability.

RB706F-40G

Contextual Info: Zowie Technology Corporation Schottky Barrier Diode Lead free product 3 2 RB706F-40G 3 1 1 2 SOT-323 MAXIMUM RATINGS Symbol Value Unit Maximum Recurrent Peak Reverse Voltage VRRM 45 Volts Maximum RMS Voltage VRMS 32 Volts VDC 40 Volts Io 0.03 Amps IFSM 0.2

SS400

Abstract: TA12100 TA12-100
Contextual Info: MCL-SS400 SILICON EPITAXIAL PLANAR DIODES High-speed Switching Applications LS-31 Features • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package • Extremely small surface mounting type. EMD2 • High Speed (trr = 1.2ns Typ.) • High reliability.

Contextual Info: MCL-SS400 SILICON EPITAXIAL PLANAR DIODES High-speed Switching Applications LS-31 Features • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package • Extremely small surface mounting type. EMD2 • High Speed (trr = 1.2ns Typ.) • High reliability.

SS400

Contextual Info: MCL-SS400 SILICON EPITAXIAL PLANAR DIODES High-speed Switching Applications LS-31 Features • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package • Extremely small surface mounting type. EMD2 • High Speed (trr = 1.2ns Typ.) • High reliability.

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • BAT54WS 200mWatt, 30Volt Schottky Barrier Diode &'
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rl 724 n

Abstract: ss355 DSA00422881.txt
Contextual Info: MCL-SS355 SILICON EPITAXIAL PLANAR DIODE High-speed Switching Applications LS-31 Features • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package • High Speed trr = 1.2ns Typ. • High reliability with high surge current handling capability. Absolute Maximum Ratings (Ta = 25oC)

ss355

Abstract: micromelf
Contextual Info: MCL-SS355 SILICON EPITAXIAL PLANAR DIODE High-speed Switching Applications LS-31 Features • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package • High Speed trr = 1.2ns Typ. • High reliability with high surge current handling capability. Absolute Maximum Ratings (Ta = 25oC)

1N5400G

Contextual Info: 1N5400G - 1N5408G 3.0A GLASS PASSIVATED RECTIFIER Features and Benefits Mechanical Data • • • • • • Glass Passivated Die Construction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Lead Free Finish, RoHS Compliant Note 1

SS355

Abstract: TA12100
Contextual Info: MCL-SS355 SILICON EPITAXIAL PLANAR DIODE High-speed Switching Applications LS-31 Features • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package • High Speed trr = 1.2ns Typ. • High reliability with high surge current handling capability. Absolute Maximum Ratings (Ta = 25oC)

ss355

Abstract: 1N 2002 diode
Contextual Info: MCL-SS355 SILICON EPITAXIAL PLANAR DIODE High-speed Switching Applications LS-31 Features • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package • High Speed trr = 1.2ns Typ. • High reliability with high surge current handling capability. Absolute Maximum Ratings (Ta = 25oC)

C100P

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV1470 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES E B L ・High Capacitance Ratio : C1V/C5V=5.0 Min. L ・Variations of Capacitance Values is Little. D ・Excellent C-V Characteristics.

2N3819 spice model

Abstract: construction of varactor diode bfr90 equivalent ZMV830B 2N3819 S T A 933 ZMV836B ZC829A transistor 2N3819 2N3819 equivalent
Contextual Info: Applications Note 9 Issue 4 July 2002 Zetex Variable Capacitance Diodes Neil Chadderton Introduction The advent of varactor diodes has made a huge impact in many areas of electronic design, which is only too evident in todays consumer products. Formerly, where bulky or unreliable

MW22-5

Abstract: Device marking code 1m diode schottky marking code PD J-STD-020A SDM03MT40 SDM03MT40-7 1N 2002 diode
Contextual Info: SDM03MT40 SURFACE MOUNT SCHOTTKY BARRIER DIODE SPICE MODELS: SDM03MT40 NEW PRODUCT Features • · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOT-26 A Dim Min Max

SDM03MT40

Abstract: SDM03MT40-7 SDM03MT40-7-F
Contextual Info: SPICE MODEL: SDM03MT40 SDM03MT40 SURFACE MOUNT SCHOTTKY BARRIER DIODE NEW PRODUCT Features • · · · · Low Forward Voltage Drop SOT-26 Guard Ring Die Construction for Transient Protection Ideal for low logic level applications A Low Capacitance Available in Lead Free/RoHS Compliant Version Note 3