1N 043 DIODE Search Results

Diode BAY 46

Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Contextual Info: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

Diode BAY 71

Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a

Diode BAY 21

Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
Contextual Info: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j

1N6325

Abstract: 1N6327 JAN
Contextual Info: 1N 6309 thru 1N 6355 / /' Microsemi Corp. ' The d/oOe experts SCOTTSDALE. A Z SANTA ANA, CA For m ore inform ation call: 714 979-8220 500 mW Glass Zener Diodes FEATURES • VOIOLESS HERMETICALLY SEALED GLASS PACKAGE • MICROMINIATURE PACKAGE • TRIPLE LAYER PASSIVATION

PSD705

Contextual Info: PSD705 thru PSD706 SURFACE MOUNT SCHOTTKY BARRIER DIODES SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS SOT-23 .014 0.35 .020(0.51) TOP VIEW .033(0.85) .041(1.05) .018(0.46) .039(1.00) 1.06(2.70) 1.22(3.10) .047(1.19) 083(2.10) .055(1.4) 1.18(3.0) .067(1.70)

Contextual Info: 1N 6309 thru 1N 6355 M ierosemi Corp. The dio d e experts- SANTA A N A , CA F o r m o r e in f o r m a ti o n call: 714 979-8220 500 mW Glass Zener Diodes FEATURES VOIDLESS HERMETICALLY SEALED GLASS PACKAGE >MICROMINIATURE PACKAGE . TRIPLE LAYER PASSIVATION

RD10MW

Abstract: RD11MW RD12MW RD13MW RD15MW RD16MW RD18MW RD20MW RD39MW RD7.5MW
Contextual Info: データ・シート 定電圧ダイオード Zener Diode RD2.0MW~RD39MW 200 mW プレ−ナ形シリコンダブル定電圧ダイオ−ド（アノ−ド共通） 外形図（単位：mm） RD2.4MW ∼ RD9.1MW は許容損失 200 mW のプレ−ナ形ダブ

diode 1N 1442

Abstract: n 332 ab TT 2076 RD33ES RD39ES RD10ES RD11ES RD12ES RD13ES RD15ES
Contextual Info: データ・シート 定電圧ダイオード Zener Diodes RD2.0ES~RD39ES 400 mWプレーナ形小形パッケージ DHD構造シリコン定電圧ダイオード RD2.0ES∼RD39ESは許容損失が400 mWのプレーナ形ガラスシ 外形図（単位：mm）

RD16JS

Abstract: RD10JS RD11JS RD12JS RD13JS RD15JS RD18JS RD39JS RD51 1b2 zener
Contextual Info: データ・シート 定電圧ダイオード Zener Diodes RD4.7JS~RD39JS 400 mWプレーナ形小形パッケージ DHD構造シリコン定電圧ダイオード RD4.7JS∼RD39JSは許容損失400 mWのプレーナ形ガラス封止DHD 外形図（単位：mm）

1n523

Abstract: 1N551 1N5519 1N5520 1N5521 1N5522 1N5524 1N5525 1N5526 1N5528
Contextual Info: 1 9 B9963 CENTRAL SEMICONDUCTOR hi g BEÊPai De J iV ö ^T]] QDOOETT 3 g^a&ESQBBSSOISÊ !? @®Fg Csntral m central semiconductor Corp. iiis §@waie©iitäiyG£iw «»¿•fry g©&sii£@siefüeter C©rp. m m a S |~~ 1135518, A, B, C, D 3> THRU 1N55U6, A, B, C, D

schottky diode sod-123 marking code 1M

Contextual Info: FM120-M+ 66 WILLAS THRU LESHAN RADIO COMPANY, LTD. FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Switching diode 6:,7&+,1*'LRGHV SOD-523 Package outline L1SS400GT1G .035 0.90 .028(0.70) • Applications

KSG-173

Abstract: connectors KSG-203 BERG STRIP female 173114 rightangled subminiature connector BERG strip connector dimension
Contextual Info: Table of contents Cable housings for connectors to DIN 41 612 and VG 95 324 General, Patterns, Packing Dimensions Technical data, Coding system Cable housings KSG 173 for connectors type B, C, D, E, H11, H15, Q, R KSG 203 for female connectors type F KSG 253 for female ribbon-cable IDC -connectors type C

diode 0a47

Abstract: DIODE OA91 OA95 diode OA90 diode oa47 diode DIODE OA90 OA91 diode OA1182 0a47 diode germanium oa95
Contextual Info: B K C INTERNATIONAL 30E D • 1 1 7 H 4 3 0000355 ? ■ x iiL lL H - d - . -pOl-OT i 6 Lake Street PO Box 1436 Lawrence. MA 01841 617)681-0392 (508) 681-0392 BK C International Electronics Inc. Gold Bond Germanium Diodes TYPE G1607 FEATURES Low forward voltage drop

1N523

Contextual Info: 19 B9963 CENTRAL SEMICONDUCTOR h i g BEÊPai g^a&ESQBBSSOISÊ !? @ ® F g D e J iV ö ^T]] QDOOETT 3 |~~ 1135518, A, B, C, D §@waie©iitäiyG£oF w Csntral m m THRU m central semiconductor Corp. 3> 1N55U6, A, B, C, D g©&sii£@siefüeter C©rp. «»¿•fry

MOV 103 M 3 KV

Contextual Info: Power Switching & Controls For Business-Critical ContinuityTM Grid to Chip Surge Protection Product Catalog Contact Surge Protection 100 Emerson Parkway Binghamton, NY 13905 T: 607-721-8840 Outside U.S. T: 800-288-6169 (U.S. & Canada Only) F: 607-722-8713

7824 5A

Abstract: 7824 3A C10535J C10943X IEC1000 NNCD10A NNCD11A NNCD12A NEC NNCD4.7A
Contextual Info: データ・シート 静電気ノイズクリッピングダイオード NNCD3.3A~NNCD12A ESD ノイズクリッピング・ダイオード（400 mWタイプ） 本製品シリーズは，ESDノイズ保護用に開発したダイオードで 外形図（単位：mm）

C10535J

Abstract: C10943X IEC1000 NNCD10B NNCD11B NNCD12B 1N 043 diode
Contextual Info: データ・シート 静電気ノイズクリッピングダイオード NNCD3.3B~NNCD12B ESD ノイズクリッピング・ダイオード（500 mWタイプ） 本製品シリーズは，ESDノイズ保護用に開発したダイオードで 外形図（単位：mm）

sn0636

Abstract: SH 2104 MCP6546 MCP6546R MCP6546U MCP6547 MCP6548 MCP6549
Contextual Info: MCP6546/6R/6U/7/8/9 Open-Drain Output Sub-Microamp Comparators Features Description • • • • • • • • • • • The Microchip Technology Inc. MCP6546/7/8/9 family of comparators is offered in single MCP6546, MCP6546R, MCP6546U , single with chip select

national semiconductor cmos

Abstract: op-amp integrator mhz application for high gain cmos opamp circuit operational hindi ma LMC6041 LMC6044 LMC6062 LMC6082 LMC660
Contextual Info: National Semiconductor Application Note 856 David Hindi September 1992 ABSTRACT A SPICE macromodel that captures the ‘‘personality’’ of National Semiconductor’s CMOS op-amps has been developed The salient features of the macromodel are a MOSFET input stage Miller compensation and a currentsource output stage A description of the model will be given

RD10MW

Abstract: RD11MW RD12MW RD13MW RD15MW RD16MW RD18MW RD20MW RD39MW iza marking
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

SC1301

Abstract: SC4431 SC4809AIMSTR SC4809AIMSTRT SC4809BIMSTR SC4809BIMSTRT SC4809CIMSTR SC4809CIMSTRT EFD15 5v flyback flyback transformer sanyo
Contextual Info: SC4809A/B/C High Performance Current Mode PWM Controller POWER MANAGEMENT Description Features The SC4809A/B/C is a 10 pin BICMOS primary side current mode controller for use in Isolated DC-DC and off-line switching power supplies. It is a highly integrated