1MLB Search Results
1MLB Price and Stock
pSemi PE42641MLBD-ZIC RF SWITCH SP4T 3GHZ 16QFN |
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PE42641MLBD-Z | Digi-Reel | 7,563 | 1 |
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PE42641MLBD-Z | 12,718 |
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PE42641MLBD-Z | 52,540 |
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pSemi PE42721MLBA-ZIC RF SWITCH SPDT 2.2GHZ 12QFN |
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PE42721MLBA-Z | Cut Tape | 5,980 | 1 |
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PE42721MLBA-Z | 17,880 |
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PE42721MLBA-Z | 12,000 |
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pSemi PE42821MLBA-XIC RF SWITCH SPDT 2.7GHZ 32QFN |
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PE42821MLBA-X | Cut Tape | 2,161 | 1 |
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Vishay Sfernice P16SNM471MLB15POT 470 OHM 1/2W CERMET LOG |
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P16SNM471MLB15 | Box | 17 | 1 |
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Vishay Sfernice PA16NM471MLB15PA16 N 470U 20% L BO E3 |
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PA16NM471MLB15 | Bulk | 20 |
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1MLB Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ST-1MLBR2 PHOTOTRANSISTORS フォトトランジスタ ST-1MLBR2はメタルステムにエポキシ樹脂可視光カットフィルターレンズを装着した、赤外光のみに感度を持つ高感 度のシリコンフォトトランジスタです。 |
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Contextual Info: DATE REVISIONS REV DRAWING NUMBER REV OED-PT-1MLB ø4.20 [0.165] ø3.55 [0.140] 2.00 [0.079] MAX. 2.00 [0.079] 0.20 [0.008] 20.00 [0.787] ø0.45 [0.018] 3 PLS. 1.27 [0.050] (2 PLS.) 2.54 [0.100] ø5.40 [0.213] RELIABILITY NOTE OUR MANY YEARS OF EXPERIENCE DATA ACCUMULATION INDICATE |
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Contextual Info: Photo transistors KODENSHI ST-1MLA・ST-1MLB DIMENSIONS Unit : mm The ST-1MLA and 1MLB are high-sensitivity NPN silicon phototransistors mounted in TO-18 Type header with clear epoxy encapsulation. The phototransistors have a wide angular response and relatively low-cost compared to TO-18 can type |
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200lx 000lx 2856K | |
1MLB
Abstract: ST-1MLBR2
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200lx 000lx 2856K 1MLB ST-1MLBR2 | |
LT 7201Contextual Info: Y Y ^ _ D E T E C T O R S L T ' : ' P H Q T O T R A M S IS T Q R S ST1MLA,1MLB S T -1 M L A , 1 MLBii, L tz * * . * h I- 7 V U □ > 7 * i ’t' ffiTtSfc DIMENSIONS U n it:m m > - > *' £ - f - f o 7 0 V - "J > 7 * < |
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720 transistorContextual Info: OST-1MLBR2 PHOTO TRANSISTOR • General Description The OST-1MLBR2 is high sensitivity NPN silicon phototransistors mounted in TO-18 type header with black epoxy encapsulation. With daylight filter the phototransistor is sensitive only infrared rays. ■ Features |
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200Lux 2000Lux 2856K 720 transistor | |
PhototransistorsContextual Info: フォトトランジスタ PHOTOTRANSISTORS ST-1MLBR2 ST-1MLBR2はメタルステムにエポキシ樹脂製可視光カットフィル •外形寸法 DIMENSIONS(Unit : mm) ターレンズを装着した、赤外光のみに感度を持つ高感度シリコンフ |
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Contextual Info: KODENSHI CORP 2 SE D • 5 2 4 5 bDfi 0000173 1 ■ r z z _ ^ 7r h ^ — P H O T O P A R L IN G T O N S PT-IMLA, IMLB £S t 9 J P * -r A t C i t f * DIMENSIONS (Unit:mm L tz&&t}<T)'> <J 3 > 7 * b y - 7 > h > X 'to / \ - * 9 - "J i> U > <„ T y (r The PT-1MLA and 1MLB are high-output NPN silicon |
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2856KÂ | |
Contextual Info: ࡈࠜ࠻࠻ࡦࠫࠬ࠲ 2*16164#05+56145 ST-1MLB عᄖᒻኸᴺ&ޓ+/'05+105㧔7PKVOO㧕 Ǿr |
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Contextual Info: OED-ST-1MLB 4.20[0.165] 3.55[0.140] 10V 2.00[0.079] MAX. 100 5V 2.00[0.079] 2.0 0.2 0.4 0.20[0.008] 8 10 880 ±70 20.00[0.787] CLEAR 0.45[0.018] 1.27[0.050] 40 4 100 2.54[0.100] 25 30 85 85 260 5.40[0.213] 3 2.0mm FROM BODY 2 1 1.0 0[ 0.0 39 ] 3 1.0 0[ 0.0 |
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PT-7L
Abstract: PT-23G J520 PT7L PT-1MLB EV40
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2856KS* PT-7L PT-23G J520 PT7L PT-1MLB EV40 | |
Contextual Info: DIMENSIONS Unit: mm ST-IMLAs IMLB(j:s * ? J I ^ Z t - A I Z i : # * Lt:&!$gcr>'>iJ a > 7 * F b 7 > it Z fi- ? T o The ST-1MLA and 1MLB are high-sensitivity NPN silicon phototransistors mounted in TO-18 type header with clear epoxy encapsulation. The phototransistors have a wide |
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200Lux 2856KWi 5245fciOA | |
Contextual Info: KODENSHI CORP 25E D S242b0fi QQ00157 3 • ST-IMLAR2, IMLBR2 i, * DIMENSIONS (Unit:mm t> "j b 7 -r'VU? — 3 > 7 ^ h \- 7 > * > Z jr x - t. ST-1MLAR2 2.0+ 0.2 The ST-1MLAR2 and 1MLBR2 are high-sensitivity NPN silicon phototransistors mounted in a TO-18 type header |
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S242b0fi QQ00157 11--I0J | |
KODENSHI CORP
Abstract: npn 940 Kodenshi, phototransistor, infrared
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000lx 200lx 2856K KODENSHI CORP npn 940 Kodenshi, phototransistor, infrared | |
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Contextual Info: ࡈࠜ࠻࠻ࡦࠫࠬ࠲ 2*16164#05+56145 ST-1MLBR2 56/.$4ߪࠪࠠࡐࠛߦࡓ࠹ࠬ࡞࠲ࡔޔ᮸⢽นⷞశࠞ࠶࠻ ࡈࠜ࡞࠲ࡦ࠭ࠍⵝ⌕ߒߚ⿒ޔᄖశߩߺߦᗵᐲࠍᜬߟ㜞ᗵᐲ ࠪࠦࡦࡈࠜ࠻࠻ࡦࠫࠬ࠲ߢߔޕ |
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Contextual Info: ST-1MLB PHOTOTRANSISTORS フォトトランジスタ ST-1MLBはメタルステムに透明エポキシ樹脂レンズを装着した高感度のシリコンフォトトランジスタです。広指向性で す。 The ST-1MLB is a high-sensitivity NPN silicon phototransistor mounted on TO-18 type metal stems with clear |
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photo transistor
Abstract: photo transistor high current Rise time of photo transistor
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200Lux 2000Lux 2856K photo transistor photo transistor high current Rise time of photo transistor | |
nas1805
Abstract: nas1291c3m nas1291 nas1791 NAS1792 NAS1804 TORQUE-TENSION MANUAL No. 8804 eslok NAS1474 NASM45938
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