1M X 16 MEMORY MODULE Search Results

NY11111

Contextual Info: STI641000AD1 168-PIN DIMMS 1M X 64 DRAM DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI641000AD1 is a 1M bit x 64 Dynamic RAM high density memory module. The Simple Technology STI641000AD1 consists of four CMOS 1M x 16 bit DRAMs in

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED2M361JSQW-XX FAST PAGE MODE, 2M X 36 SIMM Using 1M X 16 DRAM and 1M X 4 QUAD CAS DRAM, 1K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED2M361JSQW-XX is a 2M bit X 36 Dynamic RAM high density memory module.

Contextual Info: STI721007D1 -xxVG 168-PIN DIMMS 1M X 72 Bit DRAM DIMM with EDO Mode and ECC FEATURES GENERAL DESCRIPTION • The Simple Technology STI721007D1-xxVG is a 1M x 72 bit Dynamic RAM high density memory module. The module consists of four 1M x 16 bit DRAMs in a 44-pin TSOP packages

TLA064

Abstract: S71PL129JC0 S29PL129J S71PL129JA0 S71PL129JB0
Contextual Info: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION

simm 72pin

Contextual Info: O K I Semiconductor MSC23B236A-XXBS8/PS8 2,097,152-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The Oki M SC23B236A -xxBS8/D S8 is a fully decoded 2,097,152-word x 36-bit CMOS dynamic random access memory composed of four 16-Mb 1M x 16 DRAMs in SOJ and four 2-M b (1M

S29GL032A

Abstract: S29GL-A S71GL032A
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) pSRAM S71GL032A Based MCPs Cover Sheet Data Sheet (Advance Information)

Contextual Info: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/pSRAM Data Sheet (Advance Information)

Contextual Info: STI322004A 72-PIN SIMMS 2M X 32 DRAM SIMM EDO Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI322004A is a 2M bits x 32 Dynamic RAM high density memory module. The Simple Technology STI322004A consist of four CMOS 1M x 16 DR^Ms in 42-pin

B1321

Abstract: LB-19
Contextual Info: O K I Semiconductor M S C 23B 1321 A -xxB S2/PS2 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23B1321 A-xxBS2/DS2 is a fully decoded 1,048,576-word x 32-bit CMOS Dynamic Random Access Memory Module composed of two 16-Mb DRAMs 1M x 16 in SOJ packages

Contextual Info: MOSEL V I T E L I C PRELIMINARY V35322W35K 2M x 32 EDO MEMORY MODULE Features Description • ■ ■ ■ ■ ■ The V35322W35K memory module is organized as 2,097,152 x 32 bits in a 72-lead single-in-line m odule. T he 2M x 32 m em ory m odule uses 4 M osel-Vitelic 1M x 16 DRAMs. The x32 modules

I051

Abstract: ez35
Contextual Info: Order this document by 3VEDOU32D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1,2, 4M DRAM Sm all Outline D ual-In-Line Memory Module SO-DIMM X 32 3.3 V, EDO, Unbuffered 4, 8, and 16 Megabyte 1M x 32 (4MB), 2M x 32 (BMB) 72-LEAD SMALL OUTLINE DIMM CASE 992A-01

DQ85

Contextual Info: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM I I I I I I Multichip Module - H eatures 6 Low Power Texas Instruments 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2 Banks High-Speed, Low-Noise, Low-Voltage TTL LVTTL

Contextual Info: HB56HW165DB-6B/7B 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-571 Z Preliminary - Rev.0.0 Apr. 18,1996 Description The HB56HW165DB is a 1M X 64 dynamic RAM Small Outline Dual In-line Memory Module (S.0 .DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W18165BTT) sealed in TSOP package and 1

Contextual Info: DENSE-PAC 16 Megabit High Speed CM OS SRAM D P S 1M X 16M Kn 3 MICK O SYSTEM S SLCC D ESCR IPTIO N : The DPS1MX16MKn3 High Speed SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Lead less Chip Carriers SLCC .

Contextual Info: Standard Products ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics May 30, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 1M x 16 synchronous dynamic random access memory chips in one MCM

SIEMENS 3 TB 40 17 - 0A

Abstract: SIEMENS 3 TB 40 12 - 0A
Contextual Info: SIEMENS 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module HYM64V1005GU-50/-60 HYM72V1005GU-50/-60 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module for PC main memory applications

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED1M321JSMW-XX FAST PAGE MODE 1M X 32 DRAM SIMM, 1K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED1M321JSMW-XX is a 1M bit x 32 Dynamic RAM high density memory module. The AVED Memory Products AVED1M321JSMW-XX

3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Contextual Info: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable

1m x 16 memory module

Abstract: AEPDD4X1M5 d1758
Contextual Info: AEPDD4X1M5 DYNAMIC RAM MODULE > > Four 1,048,576 x 5 Organization > > Module can be organized into three separate configurations: I. 1M x 20 II. 2M x 10 III. 4M x 5 > > 36 x 2 72 pins VDIP edge clip > > 0.100 inch distance between pins > > Single +5V power supply

Contextual Info: 3TE D ADVANCED ELECTRO NIC PKG B D5SM7T3 ÜDOOBbS 1 IAEP AEPDD4X1M5 DYNAMIC RAM MODULE > > Four 1,048,576 x 5 Organization > > Module can be organized into three separate configurations: I. 1 M X 20 II. 2 M x 10 III. » 4M X 5 36 x 2 72 pins VDIP edge clip

Contextual Info: ûtâ^wàL M ICROCIM T CORPORATION AK5362048AWP 2,097,152 Word by 36 Bit CM O S Dynamic Random A cce ss Memory j DESCRIPTIO The Accutek AK5362048AWP high density memory module is a CMOS dynamic RAM organized in 2048K x 36 bit words. The module consists of four standard 1 Meg x 18 DRAMs in plastic SOJ

Contextual Info: MOSEL VITELIC PRELIMINARY V408J32 1M X 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • ■ The V408J32 memory Module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line mod­ ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The x32 modules are ideal

Y7T77

Contextual Info: M OSEL VTTEUC P R E L IM IN A R Y V404J232 and V404J236 2M x 32 and 2M x 36 CMOS MEMORY MODULES Features Description • 2,097,152 x 32/36 bit organization ■ Utilizes 1M x 4 C M O S DRAMs ■ Fast access times: 70 ns, 80 ns ■ Fast Page mode operation ■ Low power dissipation

Contextual Info: 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module HYS64V1000GU HYS72V1000GU 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 1M x 6 4 ,1 M x 72 organisation • Optimized for byte-write non-parity or ECC applications