1M TRANSISTOR Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z Pb-Free Package is Available. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel 3000/Tape & Reel 1M LMBTA14LT3G 1N 10000/Tape & Reel

TRANSISTOR SOT23, Vbe 8V

Abstract: FMMT614 DSA003700
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.

Contextual Info: EMC2 / UMC2N / FMC2A Transistors 1 lO/lI=20 OUTPUT VOLTAGE : VO on (V) 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current DTr2 OUTPUT CURRENT : Io (A)

XQ5VFX130T

Abstract: XQ5VSX50T
Contextual Info: 74 Virtex-5Q FPGA Data Sheet: DC and Switching Characteristics Product Specification DS714 v2.2 January 17, 2011 Virtex-5Q FPGA Electrical Characteristics Defense-grade Virtex -5Q FPGAs are available in -2I, -1I, and -1M (only FX70T and FX100T devices in -1M) speed

marking code k4t

Abstract: A151W Q0040 A152W
Contextual Info: MOTOROLA Order this document by M1MA151WKT1/D SEMICONDUCTOR TECHNICAL DATA Common C athode Silicon Dual S w itching Diodes M 1M A151W KT1 M 1M A152W KT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59

Contextual Info: September 1990 Editor 2.0 FUJITSU DATA SHEET MB82B001-25/-35 1M-BIT HIGH-SPEED BiCMOS SRAM 1M Words x 1 Bit High-Speed BiCMOS Static Random Access Memory The Fujitsu MB82B001 is a 1,048,576 words x 1 bit static random access memory fabricated with a BiCMOS process technology. For lower power dissipation and higher

Contextual Info: MOTOROLA Order this document by M1MA151WAT1/D SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diodes M 1M A 151W A T1 M 1M A 152W A T1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59

Contextual Info: CY7C1059DV33 8-Mbit 1M x 8 Static RAM Functional Description Features The CY7C1059DV33 is a high performance CMOS Static RAM organized as 1M words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. To write to the device,

max749 contrast

Abstract: RV1 1M 680R MAX749 zetex 749 1N5819 FMMT720 DN34
Contextual Info: Design Note 34 Issue 1 April 1996 High Efficiency Converter for LCD Bias Contrast Supplies DC Input +2.0V to +6.0V 22µF/10V C3 C2 0.1µF R2 V+ CS Maxim 749 DHI ADJ TR1 FMMT720 R1 DLOW 680R GND FB 47µH 1M RFB L1 RV1 1M D1 1N5819 C1 22µF/30V Vout = -17.0V

Contextual Info: MOTOROLA Order this document by M1MA141WKT1/D SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M 1M A 141W K T 1 M 1M A 142W K T 1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the S C -70 package

Contextual Info: CY7C1481V33 CY7C1483V33 CY7C1487V33 PRELIMINARY 2M x 36/4M x 18/1M x 72 Flow-through SRAM Features • Supports 133-MHz bus operations • 2M x 36/4M x 18/1M x 72 common I/O • Fast clock-to-output times — 5.5 ns for 150-MHz device — 6.5 ns (for 133-MHz device)

Contextual Info: FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS I ISSUE 4 - DECEMBER 1996_ COMPLEMENTARY TYPES- FMMTA12 - NONE FMMTA13 - FMMTA63 FMMTA14 - FMMTA64 PARTMARKING DETAILS - FMMTA12 - 3 W FMMTA13 - 1M FMMTA14 - 1N

LMBTA14LT1G

Abstract: LMBTA13LT1G LMBTA14 50K MARKING SOT23
Contextual Info: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z We declare that the material of product compliance with RoHS requirements. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel

FE5V-TA6

Abstract: FE5V-TB6-L10 IEC60255 FE5V-TB6-L3 IEC60255-5 daigram Yamatake FE5V-TA6-L3 FE5V-TA6-L2 FE5V-TA6-L10
Contextual Info: CATALOG LISTING FE5V-TA6 FE5V-TB6 FE5V-TA6-L2 FE5V-TB6-L2 FE5V-TA6-L3 FE5V-TB6-L3 FE5V-TA6-L5 FE5V-TB6-L5 FE5V-T A6-L10 FE5V-TB6-L10 3. C A B L E ; 0 3 CABLE LENGTH 1m 1m 2m 2m 3m 3m 5m 5m 1 Om 1 Om GRAY 0 . 1 8 mm 2 ( 1 6 /0.1 2 ) x 3 2. M ATERIALS ; CASE

CMBTA13

Abstract: CMBTA14
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA13 CMBTA14 N–P–N SMALL–SIGNAL DARLINGTON TRANSISTORS N–P–N transistors Marking CMBTA13 = 1M CMBTA14 = 1N PACKAGE OUTLINE DETAILS

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The ,uPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA13 CMBTA14 N–P–N SMALL–SIGNAL DARLINGTON TRANSISTORS N–P–N transisto rs Marking CMBTA13 = 1M CMBTA14 = 1N PACKAGE OUTLINE DETAILS

FMMT38A

Abstract: FMMTA12 FMMTA13 FMMTA14 FMMTA63 FMMTA64 DSA003703
Contextual Info: FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 4 - DECEMBER 1996 COMPLEMENTARY TYPES - PARTMARKING DETAILS – FMMTA12 – NONE FMMTA13 – FMMTA63 FMMTA14 – FMMTA64 E C B FMMTA12 – 3W FMMTA13 – 1M FMMTA14 – 1N ABSOLUTE MAXIMUM RATINGS.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The ,uPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The /¿PD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

24v 12v 20A regulator

Abstract: CLC410 HFA1145 HFA1145IB HFA1145IP HFA11XXEVAL h1145i
Contextual Info: HFA1145 Data Sheet September 1998 330MHz, Low Power, Current Feedback Video Operational Amplifier with Output Disable File Number 3955.3 Features • Low Supply Current . . . . . . . . . . . . . . . . . . . . . . . . 5.8mA • High Input Impedance . . . . . . . . . . . . . . . . . . . . . . . 1MΩ

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431632L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.