1M TRANSISTOR Search Results

dalsa ft

Abstract: TRANSISTOR BC 157 pin connection circuit diagram water level probe sensor 1024H AN01 BG40 FTT1010M image sensor x-ray infrared sensor TOP 1738 ccd image area sensor 120 frame rate
Contextual Info: IMAGE SENSORS DATA SHEET FTT1010M 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2007, April 17 DALSA Professional Imaging Product Specification 1M Frame Transfer CCD Image Sensor • 1-inch optical format • 1M active pixels 1024H x 1024V

DALSA AREA CCD

Abstract: dalsa FT frame transfer
Contextual Info: IMAGE SENSORS DATA SHEET FT18 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2006 December 19 DALSA Professional Imaging Product Specification 1M Frame Transfer CCD Image Sensor • 2/3-inch optical format • 1M active pixels 1024H x 1024V

BC 9015 transistor

Abstract: Melles Griot dalsa FT FTT1010-M ccd image sensor CCD Linear Image Sensor CG1 HOYA Dalsa FTT1010M TRANSISTOR BC 157
Contextual Info: IMAGE SENSORS DATA SHEET FTT1010M 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2007, April 17 DALSA Professional Imaging Product Specification 1M Frame Transfer CCD Image Sensor • 1-inch optical format • 1M active pixels 1024H x 1024V

Contextual Info: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z Pb-Free Package is Available. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel 3000/Tape & Reel 1M LMBTA14LT3G 1N 10000/Tape & Reel

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.

TRANSISTOR SOT23, Vbe 8V

Abstract: FMMT614 DSA003700
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.

toshiba M7

Contextual Info: TO SH IB A RN1112,RN1113 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R N 1 1m 1m 7 g uRN111 m u -m u m m u m u 'm u Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • 1.6 ± 0.2 0.8 ±0.1

Contextual Info: EMC2 / UMC2N / FMC2A Transistors 1 lO/lI=20 OUTPUT VOLTAGE : VO on (V) 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current DTr2 OUTPUT CURRENT : Io (A)

BFR92 application note

Abstract: FT50M Dalsa
Contextual Info: IMAGE SENSORS DATA SHEET FT50M 1M Frame Transfer CCD Image Sensor Preliminary specification DALSA Professional Imaging 2007 September 21 DALSA Professional Imaging Preliminary Specification Frame Transfer CCD Image Sensor • 1/2-inch optical format • 1M active pixels 1024H x 1024V

FT50M

Abstract: line follower sensor CCD IMAGE BFR92 application note Ir sensor pin details linear CCD 512 liquid float level optical sensor 76131 ccd image sensor frame transfer
Contextual Info: IMAGE SENSORS DATA SHEET FT50M 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2008 April 29 DALSA Professional Imaging Product Specification Frame Transfer CCD Image Sensor • 1/2-inch optical format • 1M active pixels 1024H x 1024V

BFR92 application note

Abstract: frame transfer
Contextual Info: IMAGE SENSORS DATA SHEET FT50M 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2008 January 16 DALSA Professional Imaging Product Specification Frame Transfer CCD Image Sensor • 1/2-inch optical format • 1M active pixels 1024H x 1024V

XQ5VFX130T

Abstract: XQ5VSX50T
Contextual Info: 74 Virtex-5Q FPGA Data Sheet: DC and Switching Characteristics Product Specification DS714 v2.2 January 17, 2011 Virtex-5Q FPGA Electrical Characteristics Defense-grade Virtex -5Q FPGAs are available in -2I, -1I, and -1M (only FX70T and FX100T devices in -1M) speed

Contextual Info: IMAGE SENSORS DATA SHEET FT50M 1M Frame Transfer CCD Image Sensor Preliminary specification DALSA Professional Imaging 2006 November 28 DALSA Professional Imaging Preliminary Specification Frame Transfer CCD Image Sensor • 1/2-inch optical format • 1M active pixels 1024H x 1024V

100-PIN

Abstract: GVT71256ZC36 GVT71512ZC18
Contextual Info: ADVANCE INFORMATION GVT71512ZC36/GVT71A24ZC18 512K X 36/1M X 18 ZBL SRAM GALVANTECH, INC. SYNCHRONOUS ZBL SRAM PIPELINED OUTPUT 512K x 36 SRAM 1M x 18 SRAM +3.3V SUPPLY, +3.3V or +2.5V I/O FEATURES GENERAL DESCRIPTION • The GVT71512ZC36 and GVT71A24ZC18 SRAMs are

motorola surface mount marking code

Abstract: motorola diode marking code MU diode MARKING CODE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Sw itching Diodes M 1M A 151W KT1 M 1M A 152W KT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59

Contextual Info: TA7712P/F TO SH IB A TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC Tm mAm7m 7m 1m 3 P g Tm mAm7m 7m 1m 3 F • ■ 3 PHASE BI-DIRECTIONAL FOR MOTOR CONTROL IC FEATURES • FG is not required. System for obtaining rotation signal through position

tdb 117

Abstract: CY7C1471V33 CY7C1473V33 CY7C1475V33
Contextual Info: CY7C1471V33 CY7C1473V33 CY7C1475V33 PRELIMINARY 2M x 36/4M x 18/1M x 72 Flow-through SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between Write and Read cycles • Supports 133-MHz bus operations • 2M x 36/4M × 18/1M × 72 common I/O

Contextual Info: CY7C1471V33 CY7C1473V33 CY7C1475V33 ADVANCE INFORMATION 2M x 36/4M x 18/1M x 72 Flow-through SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between Write and Read cycles • Supports 133-MHz bus operations • 2M x 36/4M × 18/1M × 72 common I/O

marking code k4t

Abstract: A151W Q0040 A152W
Contextual Info: MOTOROLA Order this document by M1MA151WKT1/D SEMICONDUCTOR TECHNICAL DATA Common C athode Silicon Dual S w itching Diodes M 1M A151W KT1 M 1M A152W KT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59

CY7C1471V25

Abstract: CY7C1473V25 CY7C1475V25
Contextual Info: CY7C1471V25 CY7C1473V25 CY7C1475V25 PRELIMINARY 2M x 36/4M x 18/1M x 72 Flow-through SRAM with NoBL Architecture Features • Zero Bus Latency™, no dead cycles between write and read • Supports 133-MHz bus operations • 2M x 36/4M × 18/1M × 72 common I/O

Contextual Info: CY7C1471V25 CY7C1473V25 CY7C1475V25 ADVANCE INFORMATION 2M x 36/4M x 18/1M x 72 Flow-through SRAM with NoBL Architecture Features • Zero Bus Latency™, no dead cycles between write and read • Supports 133-MHz bus operations • 2M x 36/4M × 18/1M × 72 common I/O

Contextual Info: September 1990 Editor 2.0 FUJITSU DATA SHEET MB82B001-25/-35 1M-BIT HIGH-SPEED BiCMOS SRAM 1M Words x 1 Bit High-Speed BiCMOS Static Random Access Memory The Fujitsu MB82B001 is a 1,048,576 words x 1 bit static random access memory fabricated with a BiCMOS process technology. For lower power dissipation and higher

Contextual Info: SHARP CORP ,n r bDE i\ T> _ • „ Ô1ÛD7TÛ OGC H Sb B 224 «SRPJ T- HÌ-2 S- ^ 7 LH6N10/LH6N11 ■ CMOS 1M 128Kx8 Non-Volatile RAM Pin Connections Description The LH6N10/11 is a high speed 1M (128KX8) bit pseudo-static NVRAM which is fabricated using Sharp

W964L6ABN

Abstract: W964L6ABN80
Contextual Info: W964L6ABN 1M WORD x 16 BIT LOW POWER PSEUDO SRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3