1K X 4 STATIC RAM TTL Search Results

LH5101

Abstract: LH5101-30 intel 5101 5101 static ram
Contextual Info: LH5101 CMOS 1K 256 x 4 Static RAM FEATURES DESCRIPTION • 256 x 4 bit organization • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption:

ic 5101 ram

Abstract: 5101 RAM LH5101 LH5101-30 5101 cmos ram intel 5101 1K x 8 static ram 5101 static ram
Contextual Info: LH5101 CMOS 1K 256 4 Static RAM x FEATURES DESCRIPTION • 256 • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption: Standby: 10 (.tA x

1K x 4 static ram ttl

Abstract: lh5114
Contextual Info: LH5114 CMOS 4K 1K 4 Static RAM x DESCRIPTION FEATURES • 1,024 x 4 bit organization • Access tim e: • Power consumption: The LH5114H is a static RAM organized as 1,024 4 bits. It is fabricated using silicon-gate CMOS proc­ ess technology. x 150 ns (MAX.)

rj017

Contextual Info: IN T E GR AT ED DEVIC E 3fiE » • 4 Ô 2 S 77 1 DDG'lOig S B 1K X 36 2Kx36 CMOS DUAL-PORT STATIC RAM MODULE |cfty Integrated Dei/ice Technology, Inc. IDT PRELIMINARY IDT7M1011 J J ? 012 S 3- \4 FEATURES DESCRIPTION • High density 1K/2K x 36 CM OS Dual-Port Static RAM

X2212

Abstract: X22C12 SOIC-18 FOOTPRINT
Contextual Info: X22C12 X22C12 1K Bit 256 x 4 Nonvolatile Static RAM FEATURES DESCRIPTION • The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM STORE

X2212

Abstract: X22C12 3817
Contextual Info: X22C12 X22C12 1K Bit 256 x 4 Nonvolatile Static RAM FEATURES DESCRIPTION • The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM STORE

X2212

Abstract: X22C12
Contextual Info: X22C12 X22C12 1K Bit 256 x 4 Nonvolatile Static RAM FEATURES DESCRIPTION • The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM STORE

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5101 MARCH 1995 DS3579-3.2 MA5101 RADIATION HARD 256 x 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,

MA5101

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5101 MARCH 1995 DS3579-3.2 MA5101 RADIATION HARD 256 x 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,

vdr 471 d14

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5101 MARCH 1995 DS3579-3.2 MA5101 RADIATION HARD 256 x 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,

52212HR

Abstract: IN3064 256X4 ncr 400 256x4 static ram
Contextual Info: C 52212 R 1K BIT 2 5 6 x 4 NVRAM 1K Bit Static RAM backed by 1K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit E2PROM Changes SRAM Cycle Time less than 300 ns • • • • Power-Failure Protection Unlimited Recall Cycles

Contextual Info: 1K Commercial X2212A Jtor 2 5 6 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • JEDEC Standard 18-Pin Package • Infinite E2PROM Array Recall, RAM Read and Write Cycles

LH5114

Abstract: LH5114H15 LH5114H
Contextual Info: blE D SHARP CORP • Ô1Û07TÔ GODTbVe llâ « S R P J LH5114 FEATURES • 1,024 • Access time: 150 ns MAX. • Power consumption: Operating: 20 mA (MAX.) Standby: 5 nA (MAX.) x 4 bit organization CMOS 4K (1K x 4) Static RAM DESCRIPTION The LH5114H is a static RAM organized as 1,024

LH5114H15

Abstract: lh5114 1K x 8 static ram LH5114H 1K x 4 static ram ttl 1k x 4
Contextual Info: LH5114 CMOS 4K 1K x 4 S ta tic RAM FEATURES DESCRIPTION • 1,024 x 4 bit organization The LH5114H is a static RAM organized as 1,024 x 4 bits. It is fabricated using silicon-gate CMOS proc­ ess technology. • Access time: 150 ns (MAX.) • Power consumption:

Contextual Info: SiG E C P L E S S E Y SE M I CO N D U CT O RS DS3579-2.3 MA5101 RADIATION HARD 256 X 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3jam technology. The design uses a 6 transistor cell and has full static operation with

e/MA3110

Contextual Info: IM S 1 2 2 3 i:. : !•■■■■ '■■■ cmos High Performance 1K x 4 Static RAM mos FEATURES DESCRIPTION • INMOS'Very High Speed CMOS • Advanced Process -1 .6 Micron Design Rules • 1K x 4 Bit Organization • 25, 35, and 45 nsec Access Times

IMS1223A-25M

Abstract: IMS1223M IMS1223S-25M
Contextual Info: I IMS1223M CMOS High Performance 1K x 4 Static RAM MIL-STD-883C DESCRIPTION FEATURES The INMOS IMS1223M is a high speed CMOS 1Kx4 static RAM processed in full compliance to MIL-STD883C. The IMS1223M provides performance enhance­ ments with the additional CMOS benefits of lower power

Contextual Info: X22C12 1K Bit 256 x 4 Nonvolatile Static RAM DESCRIPTION • High Performance CMOS —150ns RAM Access Time • High Reliability —Store Cycles: 1,000,000 —Data Retention: 100 Years • Low Power Consumption —Active: 40mA Max. —Standby: 100µA Max.

IMS1223P-25

Abstract: IMS1223P-35 IMS1223P-45 IMS1223S-25 IMS1223S-35 IMS1223S-45
Contextual Info: IMS1223 CMOS High Performance 1K x 4 Static RAM mos FEATURES DESCRIPTION • INM OS'Very High Speed CMOS • • • • • • • • • • Advanced Process - 1.6 Micron Design Rules 1K x 4 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45nsec Chip Enable Access Times

Contextual Info: P4C151 ULTRA HIGH SPEED 1K x 4 RESETTABLE CACHE-TAG STATIC CMOS RAM SCRAM x f - FEATURES • Single Power Supply - 5V ±10% ■ Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times)

Contextual Info: IMS1223M CMOS High Performance 1K x 4 Static RAM MIL-STD-883C M HO S’ DESCRIPTION FEATURES The INMOS IMS1223M is a high speed CMOS 1Kx4 static RAM processed in full compliance to MIL-STD883C. The IMS1223M provides performance enhance­ ments with the additional CMOS benefits of lower power

C1507

Abstract: 7C150 C1502 C150 CY7C150 CY7C150-12DMB
Contextual Info: CY7C150 1K x 4 Static RAM Features Functional Description D D The CY7C150 is a highĆperformance CMOS static RAM designed for use in cache memory, highĆspeed graphics, and dataĆacquisition applications. The CY7C150 has a memory reset feature that allows the entire memory to be reset in two

intel 2102a

Abstract: 2102AL
Contextual Info: 2102A, 2102AL/8102A-4* 1K x 1 BIT STATIC RAM RAM P/N 2102AL-4 2102AL 2102AL-2 2102A-2 j i m 2102A-4 Operating Pwr. mW 174 174 342 342 289 289 Standby Pwr. (mW) 35 35 42 - - 5 Volts Supply Voltage SinglejHSJ/oits TDirectly TTL Compatible: All

122325

Contextual Info: IMS1223 CMOS High Performance 1K x 4 Static RAM u ilT IO S FEATURES • • • • • • • • • • • DESCRIPTION INMOS' Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules 1K x 4 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45nsec Chip Enable Access Times