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    1DON TRANSISTOR Search Results

    1DON TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    1DON TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Tsp = 25 °C Drain current (DC) Tamb = 25 °C Total power dissipation Junction temperature


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    OT223 PDF

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION PINNING - SOT404 QUICK REFERENCE DATA SYMBOL PARAMETER w o > N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface


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    OT404 BUK9656-30 PDF

    BUK10B-S0GS

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSF:ET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.


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    BUK108-50GS hs/hs25 BUK10B-S0GS PDF

    BUK102-50GL

    Abstract: IEC134 T0220AB AAB3 buk102-500l
    Contextual Info: PHILIPS I N T E R N A T I O NA L tSE D • 711Dfl2b D0b3fl25 blfi « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK102-50GL Logic level DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and


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    7110A2b D0b3fl25 BUK102-50GL ll3/lls25t IEC134 T0220AB AAB3 buk102-500l PDF

    Contextual Info: m h a r r H FA1405 i s S E M I C O N D U C T O R • M M M T T Quad, High-Speed, Low Power, Video Operational Amplifier February1995 Description Features • M l Low Supply Current.5.8mA/OpAmp • High Input


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    FA1405 560MHz 50MHz) PDF

    ANP015

    Abstract: AF4435 SMD Capacitor symbols SOP-14L Capacitor smd 680uf 16v AP2011 SB340 8870796 capacitor huang 470UF 35V SMD 6 PIN IC FOR PWM
    Contextual Info: ANP015 Application Note AP2011 High Efficiency Synchronous PWM Controller Preliminary Contents 1. AP2011 Specification 1.1 1.2 1.3 1.4 Features General Description Pin Assignments Pin Descriptions 1.5 Block Diagram 1.6 Absolute Maximum Ratings 2. Hardware


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    ANP015 AP2011 ANP015 AF4435 SMD Capacitor symbols SOP-14L Capacitor smd 680uf 16v SB340 8870796 capacitor huang 470UF 35V SMD 6 PIN IC FOR PWM PDF