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Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Tsp = 25 °C Drain current (DC) Tamb = 25 °C Total power dissipation Junction temperature

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION PINNING - SOT404 QUICK REFERENCE DATA SYMBOL PARAMETER w o > N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface

BUK10B-S0GS

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSF:ET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.

BUK102-50GL

Abstract: IEC134 T0220AB AAB3 buk102-500l
Contextual Info: PHILIPS I N T E R N A T I O NA L tSE D • 711Dfl2b D0b3fl25 blfi « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK102-50GL Logic level DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and

Contextual Info: m h a r r H FA1405 i s S E M I C O N D U C T O R • M M M T T Quad, High-Speed, Low Power, Video Operational Amplifier February1995 Description Features • M l Low Supply Current.5.8mA/OpAmp • High Input

ANP015

Abstract: AF4435 SMD Capacitor symbols SOP-14L Capacitor smd 680uf 16v AP2011 SB340 8870796 capacitor huang 470UF 35V SMD 6 PIN IC FOR PWM
Contextual Info: ANP015 Application Note AP2011 High Efficiency Synchronous PWM Controller Preliminary Contents 1. AP2011 Specification 1.1 1.2 1.3 1.4 Features General Description Pin Assignments Pin Descriptions 1.5 Block Diagram 1.6 Absolute Maximum Ratings 2. Hardware