1D555 Search Results

UV led 220 nm peak

Contextual Info: UNCONTROLLED DOCUMENT 7.00 CO.2 7 6 ] Œ] I I 2.30 [0.Û91] r— I 6 ,6 5 [0 ,2 6 2 ] f PART NUM BER REV. SS —L X H 0 7 2 G D —4 1 8 4 2 D REV. E .C .N , NUM BER A E .C .N , #10546. AND R E V IS IO N C O M M EN TS DATE B E .C .N , #1D555. 9 .3 0 .9 9 C

3EM3

Contextual Info: 128K X 8 EEPROM molate ME8128SC-20/25/30/35 Issue 1.6: November 1991 ADVANCE PRODUCT INFORMATION M o s a ic S e m ic o n d u c to r Inc. 131,072 x 8 CMOS EEPROM Features Fast Access Times of 200/250/300/350 ns JEDEC 1Mb EEPROM Standard 32 pin DIL footprint

ns032j0lbjw00

Abstract: B6 3308 S29NS032J S29NS-J VDC048 VDE044 LF35 Am29N643 NS064J0LBJW00
Contextual Info: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

Am29N643

Abstract: S29NS-J VDA044 am29bds643g SPANSION N643
Contextual Info: Am29BDS643G Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new designs, S29NS064J supersedes Am29BDS643G. Please refer to the S29NS-J family data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes

Am29N643

Abstract: ns064j0lb 5M-199 s29ns032 s99d
Contextual Info: S29NS128J/S29NS064J/S29NS032J/ S29NS016J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories Distinctive Characteristics

Contextual Info: fte molate 128K X 8 EEPROM ME8128SC-10/12/15 Issue 1.3 : January 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 131,072 x 8 CMOS EEPROM Features Very Fast Access Times of 100/120/150 ns JEDEC 1Mb EEPROM Standard 32 pin DIL footprint Operating Power 1760 mW max

VDA044

Abstract: Am29N643 n643
Contextual Info: Am29BDS643G Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

LF35

Abstract: S29NS032J S29NS-J VDC048 VDE044 NS064J0LBJW00 Nokia c7 AMAX-16 NS032J0PBJW00 Am29N643
Contextual Info: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories Data Sheet Notice to Readers: This document states the current technical specifications

Am29N643

Abstract: n643 marking
Contextual Info: ADVANCE INFORMATION Am29BDS643G 64 Megabit 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Single 1.8 volt read, program and erase (1.7 to 1.9 volt) ■ Multiplexed Data and Address for reduced I/O

circuit diagram of nokia 101

Abstract: S29NS032J S29NS-J VDC048 VDE044 spansion am29f part marking Am29N643 450Ball
Contextual Info: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: 128K X 8 EEPROM molate M E8128SC-10/12/15 Issue 1.3 : January 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 131,072 x 8 CMOS EEPROM Features Very Fast Access Times of 100/120/150 ns JEDEC 1Mb EEPROM Standard 32 pin DIL footprint Operating Power 1760 mW max