1D TRANSISTOR Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor We declare that the material of product compliance with RoHS requirements. L2SC4083PWT1G z 3 Ordering Information Device 1 Marking 2 Shipping L2SC4083PWT1G 1D 3000/Tape&Reel L2SC4083PWT1G 1D 10000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1G LMBTA43LT1G ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G 1D SOT-23 3000/Tape&Reel LMBTA42LT3G 1D SOT-23 10000/Tape&Reel

DC chopper

Abstract: 1DI75E-100 1DI75E-055 1di75 SE 265
Contextual Info: /\°7 —7“V W 7 / Power Devices JfcÉP üf^i 600V?^3. 600 volts class power transistor modules for DC chopper m se Device type VcBO Volts 1DI75E-055 1D I200E -055 1D I200K -055 600 600 600 Vceo feus V o te 550 550 550 Ic Cont. Amps. 75 200 200 Pc Watts

402w

Contextual Info: User's Guide SBOU049A – April 2007 – Revised April 2009 DEM-OPA-SO-1D Demonstration Fixture 1 Description The DEM-OPA-SO-1D demonstration fixture is an unpopulated printed circuit board PCB for single 2:1 multiplexers in SO-8 packages. Figure 1 shows the package pinout for this PCB. For more information on

1d sot-23

Abstract: M1E SOT-23 LMBTA43LT1G LMBTA43LT1 LMBTA42LT1G MARK CB SOT23 SOT-23 m1e
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1G LMBTA43LT1G ƽ We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G 1D SOT-23 3000/Tape&Reel

STGP10N50A

Abstract: STGP10N50
Contextual Info: SGS-THOMSON STGP10N50A 1D=0 _ ISOLATED GATE BIPOLAR TRANSISTOR IGBT PRELIMINARY DATA . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . VERY LOW ON-VOLTAGE DROP V Ce (s a t ) . HIGH RELIABILITY LEVEL . HIGH CURRENT CAPABILITY . OFF LOSSES INCLUDE TAIL CURRENT

a42 SMD

Abstract: CMBTA42 CMBTA43 SMD MARKING A42 A42 1d sot-23 CMBT A42 1d sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBTA42 = 1D CMBTA43 = 1E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

MV-S100649-00

Abstract: Marvell 88e1111 register map Marvell PHY 88E1111 Marvell PHY 88E1111 application note 88E1111 88E1111 PHY registers map marvel phy 88e1111 reference design Marvell 88E1111 application note 88E1111 full Marvell 88E1111
Contextual Info: 7v u3 M 1z AR zf VE nu LL a-e CO 468 NF 1d ID ge EN * M 7v TI ar u3 AL ve M 1z , U ll S AR zf ND em VE nu ER ic LL a-e NDond CO 468 A# uc NF 1d 02 tor, ID ge EN * M 13 In 03 c. TI ar AL ve , U ll S ND em ER ic NDond A# uc 02 tor, 13 In 03 c. MARVELL CONFIDENTIAL

d0147

Abstract: 2SC SERIES 7626 transistor 1D TRANSISTOR TRANSISTOR 2SC npn, transistor, sc 107 b TAA 981 2SC3838K 2SC4083 T146
Contextual Info: 2SC3838K 2SC4083 Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: — 2SC3838K; AD^, where ★is hFE code — 2SC4083; 1D-*, where ★ is hFE code high transition frequency, typically

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N–P–N transistors Marking BC846 = 1D BC846A = 1A BC846B = 1B BC847 = 1H

smd TRANSISTOR 1D

Abstract: SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBTA42 = 1D

transistor smd marking PE

Abstract: SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transisto rs Marking CMBTA42 = 1D CMBTA43 = 1E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

SXTA42

Abstract: TA-42
Contextual Info: SIEM EN S NPN Silicon High Voltage Transistors SXTA 42 SXTA43 • High breakdown voltage • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 SXTA 42 SXTA 43 1D 1E Q68000-A8394 Q68000-A8650 B E C Package1)

Contextual Info: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel

Contextual Info: EXAR CORP TI 3422618 EXAR 9 1D 0 4 7 6 5 CORP XR-L100 Master-Chip Chip Size: 102 x 85 mils NPN Transistors Small Signal: 76 Total Components: 448 Medium: 2 Bonding Pads: 24 Max. Operating Voltage: 20V Large: 2 PNP Transistors Lateral: 22 Quad Collector: 4

XR1468CN

Abstract: 1468cn XR-1468CN xr-1568
Contextual Info: EXAR CORP 3422618 EXAR De | CORP 9 1D 0 4 7 6 2 XR-G100 Master-Chip Chip Size: 90 x 90 mils NPN Transistors Total Components: 327 Small Signal: 58 Bonding Pads; 18 High Current: 2 Max. Operating Voltage: 20V PNP Transistors: 18 Schottky Diodes: None 00047b2

Contextual Info: EXAR CORP TI 3422618 D e | BM S E b i a EXAR CORP 9 1D XR-C100A Master-Chip “ Chip Size: 56 x 62 mils NPN Transistors Total Components: 124 Small Signal: 23 Bonding Pads: 14 High Current: None Max. Operating Voltage: 20V PNP Transistors: 8 Schottky Diodes: 6

Contextual Info: 2SC4083 NPN Silicon Transistor 3 P b Lead Pb -Free 1 FEATURES: 1. BASE 2. EMITTER 3. COLLECTOR * Radio frequency amplifier * High transition frequency * High gain with low collector-to base time constant * Low noise (NF) * Marking: 1D 2 SOT-323(SC-70) Maximum Ratings ( TA=25°C unless otherwise noted)

Contextual Info: SAMSUNG ELECTRONICS INC bGE D • 7^^4142 GG11528 575 « S U C K TRANSISTORS FUNCTION GUIDE 1-4. High Voltage Transistors 1-4-1. SOT-23 Type Transistors Condition Device and Polarity NPN KST42 1D KST43(1E) PNP Vceo (V) lc (A) 300 200 150 140 0.5 0.5 0.5 0.6

TMPTA06

Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560
Contextual Info: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V|BR CBO V|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE

Contextual Info: D Ë | 3M22blfl □□D47tfl 7 E X AR CORP Tl S 3422618 EXAR CORP 9 1D 0 4 7 6 8 XR-V100 Master-Chip Chip Size: 113 x 146 mils NPN Transistors Total Components: 740 Small Signal: 140 Bonding Pads: 28 Large: 4 Max. Operating Voltage: 36V PNP Transistors Lateral: 56

Contextual Info: EXAR 3 4 2 2 6 18 EXAR CORP CORP de| BMEEblfi 0004 757 E 9 1D 0 4 7 5 7 XR-B100 Master-Chip Chip Size: 85 x 85 mils NPN Transistors Total Components: 318 Small Signal: 69 Bonding Pads: 16 High Current: None Max. Operating Voltage: 20V Dual PNP Transistors: 12