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    1CR3 Search Results

    1CR3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GJM0225C1CR30BB01L
    Murata Manufacturing Co Ltd Ceramic Capacitor, Ceramic, 16V, 33.3333% +Tol, 33.3333% -Tol, C0G, 30ppm/Cel TC, 0.0000003uF, Surface Mount, 0402M/01005 PDF
    GRM0224C1CR30BA03L
    Murata Manufacturing Co Ltd Ceramic Capacitor, Multilayer, Ceramic, 16V, 33.3333% +Tol, 33.3333% -Tol, CK, 250ppm/Cel TC, 0.0000003uF, Surface Mount, 0402M/01005 PDF
    GRM0115C1CR30BE11L
    Murata Manufacturing Co Ltd Ceramic Capacitor, Multilayer, Ceramic, 16V, 33.3333% +Tol, 33.3333% -Tol, C0G, 0.0000003uF, Surface Mount, 0201M/008004 PDF
    GRM0225C1CR30BA03L
    Murata Manufacturing Co Ltd Ceramic Capacitor, Multilayer, Ceramic, 16V, 33.3333% +Tol, 33.3333% -Tol, C0G, 30ppm/Cel TC, 0.0000003uF, Surface Mount, 0402M/01005 PDF
    GRM0224C1CR30WA03L
    Murata Manufacturing Co Ltd Ceramic Capacitor, Multilayer, Ceramic, 16V, 16.6667% +Tol, 16.6667% -Tol, CK, 250ppm/Cel TC, 0.0000003uF, Surface Mount, 0402M/01005 PDF

    1CR3 Datasheets (2)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    1CR3
    Continental Device India 1, 3 and 6 Amp General Purpose Diodes Scan PDF 54.58KB 1
    1CR30L
    Altech CIR BRK THRM-MAG 30A 277VAC LEVR Original PDF 2.78MB 10
    SF Impression Pixel

    1CR3 Price and Stock

    TE Connectivity

    TE Connectivity 100P160-09-1-C-R3-01

    100P160-09-1-C-R3-01 MOQ Reduction
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    Master Electronics () 100P160-09-1-C-R3-01
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    • 100 $184.36
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    100P160-09-1-C-R3-01
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    • 100 $171.29
    • 1000 $171.29
    • 10000 $171.29
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    Avnet Americas 100P160-09-1-C-R3-01 Bulk 38 Weeks, 1 Days 50
    • 1 -
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    • 100 $170.43
    • 1000 $167.86
    • 10000 $167.86
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    TE Connectivity 100P160-21-1-C-R3-21

    100P160-21-1-C-R3-21 MOQ Reduction
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    Master Electronics 100P160-21-1-C-R3-21
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    • 100 $69.36
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    • 10000 $69.36
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    TE Connectivity 100P160-11-1-C-R3-01

    MOQ Reduction
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    Master Electronics 100P160-11-1-C-R3-01
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    TE Connectivity 100P160-17-1-C-R3-02

    100P160-17-1-C-R3-02 MOQ Reduction
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    Master Electronics 100P160-17-1-C-R3-02
    • 1 -
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    • 100 $60.35
    • 1000 $59.14
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    TE Connectivity 100P160-15-1-C-R3-03

    100P160-15-1-C-R3-03 MOQ Reduction
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    Master Electronics 100P160-15-1-C-R3-03
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    • 100 $81.78
    • 1000 $80.14
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    1CR3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UNCONTROLLED DOCUMENT CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.S.D. HANDUNG PROCEDURES WHEN WORKING WITH THIS PART. REV, PA R T N U M B E R REV. S S P - 1 1CR3S12 B E.C.N. N U M B E R AN D R E V ISIO N C O M M EN TS DATE A E.C.N. # 1 1 0 6 6 , 1 2 .1 9 .0 3


    OCR Scan
    374ii1cr3s12ssp-11cr3s12 PDF

    IGT6D21

    Abstract: IGT6E21
    Contextual Info: IGT6D21.E21 Insulated Gate Bipolar Transistor This IG T " Transistor Insulated Gate Bipolar Transistor is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high


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    igt6d21-f--10igt6e21 PDF

    OC81

    Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP93CM84 LOW POWER CMOS 16-bit MICROCONTROLLERS TMP93CM84F 1. OUTLINE AND DEVICE CHARACTERISTICS The TMP93CM84F is high-speed advanced 16-bit microcontroller developed for controlling medium to large-scale equipment. It enable low power consumption


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    tmp93cm8416-bittmp93cm84f80-pin+2lqfp80-p-1212-0oc81 PDF

    DIP28

    Abstract: MAB8048 PCD3359A PCD3359AP PCD3359AT PCD33XXA S028 programmable Sine Wave Generator
    Contextual Info: Philips Semiconductors Product specification 8-bit microcontroller with DTMF generator and 128 bytes EEPROM CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION 4 BLOCK DIAGRAM 5 PINNING INFORMATION 5.1 5.2 Pinning Pin description 6 FREQUENCY GENERATOR


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    pcd3359a711002bdip28mab8048+5pcd3359appcd3359atpcd33xxas028programmable sine wave generator PDF

    InGaAs photodiode

    Abstract: Photodiode Array linear focal plane array J18M PHOTODIODE current voltage amplifier array 16 Photodiode-Array linear array photodiode element photo diode array photo diode array amplifier photodiode linear array
    Contextual Info: ^ EGgG JU D SO IM _ Multiplexed InGaAs Photodiode Arrays 0.8 to 1.7 jim Description The J18M Series detector is a self-scanned Indium Gallium Arsenide array with response to wavelengths ranging from 800 nm to 1700 nm. The array has elem ents


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    50sec500iij18m-28p3030b05+11gddd334ingaas photodiodephotodiode array linearfocal plane arrayj18mphotodiode current voltage amplifier array16 photodiode-arraylinear array photodiode elementphoto diode arrayphoto diode array amplifierphotodiode linear array PDF

    Contextual Info: MOTOROLA SC -CDIODES/OPTO} Üï DE I b3b7E5S 0 0 7 ^ 1 3 T - I S '- / 7 M C R 3835 Series M C R 3935 Series S ilic o n Controlled Rectifier Reverse B lo ck in g Triode Thyristor . . . d e s ig n e d fo r in d u strial a n d c o n s u m e r a p p licatio n s s u c h a s p o w e r supp lie s,


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    mcr3835mcr3935 PDF

    Contextual Info: C O N T I N E N T A L D E V I C E INDI A 32E D • E3633T4 0000055 0 ■ / PROFESSIONAL/COMMERCIAL GRADE GENERAL PURPOSE DIODES — Hou n u j - — Type Av. Rectified Current Peak Reverse Voltage (Wkg) Max. Peak Reverse Voltage Peak Forward


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    e3633t4do-41lo-32 PDF

    cd 4611

    Abstract: Philips, RC21 0603 resistor RC11 0805 RC31 0402 1005
    Contextual Info: Philips Components Product specification General purpose chip resistors sizes 1206, 0805, 0603 and 0402 RC01/11/21/31 5%; 2% FEATURES DESCRIPTION • Low assembly costs The resistors are constructed on a high grade ceramic body aluminium oxide . Internal metal electrodes are


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    rc01/11/21/31cd 4611philips, rc21 0603resistor rc11 0805+1rc31 0402 1005 PDF

    Contextual Info: Temic SÌ9430DY Semiconductors P-Channel Enhancement-Mode MOSFET P rod uct S u m m a r y VDS V r D S (o n )(^ ) I d (A) 0.050 @ VGs = -1 0 V ±5.8 0.065 @ Vos = -6 V ±4.9 0.090 @ Vgs - -4-5 V ± 4.0 -20 Recom m ended upgrade: SÌ4435D Y or SÌ4953D Y Lower profile/sm aller size see SÌ6435DQ


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    9430dy4435d4953d6435dq+3s-51360--rev18-dec-96si9430dy PDF

    1345B

    Abstract: IN1346B 1344B 1347B 1348B 1346b
    Contextual Info: CONTINENTAL DEVICE INDIA 32E D • E3633T4 0000055 0 ■ / PROFESSIONAL/COM M ERCIAL GRADE GENERAL PURPOSE DIODES uj — Hou n - — Type LU y 1N Av. Rectified 3611 CC / N 3612


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    00gqg25do-411342b1345b+5in1346b1344b1347b1348b1346b PDF

    Contextual Info: EtN UNTERNEHMEN VON Keramik-Kondensatoren fur die pnofessionelle Elektronik Ceramic Capacitors for professional electronics Roederstein Keram ische Hochspannungs- Scheibenkondensatonen, Klasse 2 C eram ic high voltage disc capacitors, class 2 Ausfuhrung / Design:


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    PDF

    timer 15720

    Contextual Info: Philips Semiconductors Product specification 8-bit microcontrollers with DTMF generator, 8 kbytes OTP and 128 bytes EEPROM 6 FREQUENCY GENERATOR The TONE output can alternatively issue twelve modem frequencies for data rates between 300 and 1200 bits/s. A versatile frequency generator section is provided see


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    timer 15720 PDF

    SM551

    Contextual Info: Sii 551 DL Vishay Siliconix New Product Complementary 20-V D-S MOSFET PRODUCT SUMMARY V d s (V) N-Channel P-Channel 20 -2 0 r DS(on) ( & ) b (A) 1.9 @ V q s = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ V q s = 2.5 V 0.21 0.995 @ V gs = - 4 .5 V -0 .4 4 1.600 @ V gs = - 2 . 7 V


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    ot-363sc-701505cs-01564--+205-ju1-00sm551 PDF

    TRANSISTOR 3611

    Abstract: 1346b J 1N 3613 mml 600 SIS 900 1344B 1345B 1347B 1348B 33T4
    Contextual Info: CONTINENTAL DEVICE INDIA 32E D • E3633T4 0000055 0 ■ / PROFESSIONAL/COM M ERCIAL GRADE GENERAL PURPOSE DIODES u j - — Type Av. Rectified Current Max. Peak Reverse Voltage Peak Forward Max. Reverse Voltage Current at V r (150°C)


    OCR Scan
    00gqg25do-41o-237transistor 3611+91346bj 1n 3613mml 600sis 9001344b1345b1347b1348b33t4 PDF