1CH725G Search Results
1CH725G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8837A Power GaAs FETs Chip Form Features • High power - Pi(jB = 32 dBm at f = 8 GHz • High gain - G-|dB = 7 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C) |
OCR Scan |
s8837a | |
TCD5251
Abstract: TCD5251BD TCD5251B
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OCR Scan |
tcd5251bd/50--ot0t725q1ch725g+3 |