1C561 Search Results

1C5615

Abstract: 1C5617 1C5619 1C5621 vr 25a
Contextual Info: basbni 1C5615 1C5617 □ □ □ □ cì S 3 « eli ’ ppc 1 Amp Fast Recovery Rectifier Chip I 200-600 Volts 1C5619 1C5621 ovos CHIP TYPE: RH FEATURES • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum

1C5618

Contextual Info: General Purpose-Silicon Rectifier Die PART NUMBER: 1C5618 CONFIGURATION: more than 500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 600 Volts MAX. OUTPUT CURRENT IO 1.0 @55deg.C Amps MAX JUNCTION TEMPERATURE

1C5619

Contextual Info: Fast Recovery- Silicon Rectifier Die PART NUMBER: 1C5619 CONFIGURATION: 100-500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 600 Volts MAX. OUTPUT CURRENT IO 1.0 @55deg.C Amps MAX JUNCTION TEMPERATURE

1C5615

Contextual Info: SENSITRON SEMICONDUCTOR 1C5615 TECHNICAL DATA DATA SHEET 927, REV. A FAST RECOVERY SILICON RECTIFIER DIE Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Die Size Max. Junction Temperature Max. Storage Temperature Symbol VRWM

PPC PRODUCTS CORP

Abstract: PPC Products 1C5615 1C5617 1C5619 1C5621 vr 25a
Contextual Info: P P C I I I I I PRODUCTS CORP bOE D • bflSblTl □ G G G C1S3 2bl * P P C J 1C5615 1C5619 1C5617 1C5621 1 Amp Fast Recovery Rectifier Chip 1200-600 Volts ^-O V 0 6 f CHIP TYPE: RH FEATURES • C hip O utline D im ensions: 41 x 41 m ils • C hip Thickness: 8 to 12 m ils

1C5617

Contextual Info: 1C5617 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 928, REV. A FAST RECOVERY SILICON RECTIFIER DIE Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Die Size Max. Junction Temperature Max. Storage Temperature Symbol VRWM

Contextual Info: 1C5614 1C5616 1C5618 1C5620 1C5622 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5061, REV. B.1 GENERAL PURPOSE SILICON RECTIFIER DIE Maximum Ratings: Characteristics Peak Inverse Voltage 1C5614 1C5616 1C5618 1C5620 1C5622 Max. Average Forward Current

1C5616

Contextual Info: General Purpose-Silicon Rectifier Die PART NUMBER: 1C5616 CONFIGURATION: more than 500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 400 Volts MAX. OUTPUT CURRENT IO 1.0 @55deg.C Amps MAX JUNCTION TEMPERATURE

1C5614

Contextual Info: General Purpose-Silicon Rectifier Die PART NUMBER: 1C5614 CONFIGURATION: more than 500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 200 Volts MAX. OUTPUT CURRENT IO 1.0 @55deg.C Amps MAX JUNCTION TEMPERATURE

1C5619

Contextual Info: 1C5619 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 929, REV. A FAST RECOVERY SILICON RECTIFIER DIE Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Die Size Max. Junction Temperature Max. Storage Temperature Symbol VRWM

Contextual Info: 1C5614 1C5616 1C5618 1C5620 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5061, REV. B GENERAL PURPOSE SILICON RECTIFIER DIE Maximum Ratings: Characteristics Peak Inverse Voltage 1C5614 1C5616 1C5618 1C5620 Max. Average Forward Current Die Size Max. Junction Temperature

1C5615

Contextual Info: Fast Recovery- Silicon Rectifier Die PART NUMBER: 1C5615 CONFIGURATION: 100-500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 200 Volts MAX. OUTPUT CURRENT IO 1.0 @55deg.C Amps MAX JUNCTION TEMPERATURE

1C5617

Contextual Info: Fast Recovery- Silicon Rectifier Die PART NUMBER: 1C5617 CONFIGURATION: 100-500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 400 Volts MAX. OUTPUT CURRENT IO 1.0 @55deg.C Amps MAX JUNCTION TEMPERATURE

PPC PRODUCTS CORP

Abstract: 1C5616 1C5620 ppc products 1C5614 1C5618 1C5622 600v 30a
Contextual Info: P P C PRODUCTS bDE CORP D b 6 5 b n i □ O Q O 'ìS S 325 «PPC Amp Medium Recovery sr Chio / 200-1000 Vòlts ^ o \-o 5 CHIP TYPE: RH FEATURES • C h ip O u tlin e D im e n s io n s : 41 x 41 m ils • C h ip T h ic k n e s s : 8 to 12 m ils • A n o d e M e ta lliz a tio n : A lu m in u m

Contextual Info: i H I R DA N G L EP R O J E C T I O N ALTERATION I S S U E I CAPAC1 TANCE ITEM CODE F / 4 ¥]ECHU H I f I f H H I f I f H I f I f M I f ~ H H " I f I f H I f 1 1 / 1 1 1 I f H I f I f I f H I f I f I f 1C2720XO 1C3320XO 1C3920XO 1C4720XO 1C5620XO 1C6820XO

Contextual Info: 2000 CATALOG SENSITRON SEMICONDUCTOR Industrial Part Numbers fo r Silicon Die General Purpose, Fast, and Ultra-Fast Recovery Rectifiers I0 ra T, Part Suitable"' M etal12' Size PIV r, a 1 , " Ir PIV 1R(P I \ ) a 7 , (Amp) (Volt) Number Application System (mil) (Volt)

1C5610

Contextual Info: t h ì r d 'a n g le PROJECTION I , ITEM .C O D E CAPACITANCE D IM E N S IO N S •* ECHU 1CI01OX5 0.0001 (101) ir 1C1210X5 0.00012 (121) li 1C1510X5 0.00015 (151) n 1C1810X5 0.00018 (181) // IC2210X5 0.00022 (221) il 1C2710X5 0.00027 (271) n 1C33ÎOX5 0.00033 (331)

Die Products

Abstract: DieProducts murc160 1c4005 1C6151A 1C5711 c6090 1C4001 1C4004 MURC120
Contextual Info: " #!$ % ! ! & '#!$ % *+ ! +, - . - ( ( / +, - Schottky Rectifier Die Sensitron www.sensitron.com/dieproducts.htm IFSM V F @ IO 25° C Part Number Max VRM Die Size IO Max V mil A A V SD040SD15A/B 15 40 1 20 0.37 SD040SA30A/B 30 40 1 20 0.49 V IR @ VRM

1C331

Abstract: 1C221 1C271 1C101
Contextual Info: THIRD ANGLE PR O JEC TIO N | CAPACITANCE ITEM I lf ECHU k DIM ENSIONS CODE * w L H 0.8 ±0.15 0.7±0.!5 il II TYPE 6 l » 62 g 0.3510.20 II 0.4min. 1C101 )X() 0.0001 ( 101) u H 1C 121 1C 151 )X() 0 .0 0 0 1 2 ( 121) 1. 6Ì 0.2 II Ki // )X() 0.00015 (151)