1C100 Search Results

Contextual Info: 14164B I41C256 I41C25 1C2 1C464 1C466 1C1000B 1C1O0OBL 1001B 1C1002B 56B 12. KM44C256BL 13. KM44C2§ßB^ 14. KM44C2I 15. 1Ç. Kirnt 1*. KM41C4001 18 llVI4*PKX 2 >.KM44C1Q00/L KM44C1 ft02 KM41 C4pD0A [1C4ÖD0AL Í1C4000ASL 1A 27. 28. 29. 30. 31. 32. 33. 34.

81c1000a

Abstract: 81C1000
Contextual Info: June 1991 Edition 4.0 FUJITSU DATA SH EET M B 8 1C1000A-60/-70/-80/-10 CMOS 1 Mx 1 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 X 1 Bit Fast Page Mode DRAM The Fujitsu M B 81C 1000A is a CM OS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The M 1C1000A has been designed for mainframe memories, buffer memories, and

1c30

Contextual Info: CURRENT SENSE INDUCTORS 13402 SOUTH 71 HIGHWAY GRANDVIEW, MO 64030 E-mail: torotel@sound.net 816 761-6314 FAX (816) 763-2278 PART NUMBER TEST LEVEL (V) † INDUCTANCE (mH) TURNS DCR (Ω) RT (Ω) SCHEMATIC *1C30 *1C50 *1C100 30 50 100 1.8 5 20 0.015 0.025

1C100

Abstract: 2C100 2C600 1c30
Contextual Info: CURRENT SENSE INDUCTORS 13402 SOUTH 71 HIGHWAY GRANDVIEW, MO 64030 E-mail: torotel@torotelprod.com 816 761-6314 FAX (816) 763-2278 PART NUMBER TEST LEVEL (V) † INDUCTANCE (mH) TURNS DCR (Ω) RT (Ω) SCHEMATIC *1C30 *1C50 *1C100 30 50 100 1.8 5 20 0.015

2C400

Abstract: 200CT 1C100
Contextual Info: CURRENT SENSE INDUCTORS 620 NORTH LINDENWOOD, OLATHE, KANSAS 66062 www.torotelproducts.com 913 747-6111 FAX (913) 747-6110 PART NUMBER TEST LEVEL (V) † INDUCTANCE (mH) TURNS DCR (Ω) RT (Ω) SCHEMATIC *1C30 *1C50 *1C100 30 50 100 1.8 5 20 0.015 0.025 0.050

Contextual Info: November 1990 Edition 2.0 DATA SHEET FUJITSU MB81CWOOA-70L/-80L/-10L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1M x 1 Bit Fast Page Mode DRAM The Fujitsu 1C1000A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The 1C1000A has been designed or mainframe

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 8 A ISSUE 3 - FEBRUARY 1995. — . FEATURES * * V cev =50V Very Low Saturation Voltages * High Gain * 20 A m p s pulse current

Contextual Info: Europe: +49 / 7731 8399 0 | Email: info@meder.com Item No.: USA: +1 / 508 295 0771 | Email: salesusa@meder.com Asia: +852 / 2955 1682 | Email: salesasia@meder.com 9203110014 Item: MK20/1-C-100W Magnetic properties Pull-In Test equipment Conditions Min Typ

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: MODELS M, C, F,T, B NTC Thermistors Coated FEATURES • Small size - conformal coated • Wide resistance range • Available in 11 different R-T curves • Configured for standard P.C. board mounting or assembly in probes STANDARD ELECTRICAL SPECIFICATIONS and DIMENSIONAL CONFIGURATIONS

cr 406 transistor

Abstract: QM100DY-2HB
Contextual Info: MITSUBISHI TRANSISTOR MODULES j QM100DY-2HBK ¡ HIGH POWER SWITCHING USE INSULATED TYPE I Q M 100DY-2HBK i Í • Ic Collector current. 10QA Collector-emitter voltage.1000V • hFE DC current gain.750

Spansion S29GL512N11

Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

asme SA388

Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ

EN25QH

Abstract: 1AEF00 cFeon* SPI Flash
Contextual Info: EN25QH256 EN25QH256 256 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 • 256 M-bit Serial Flash - 256 M-bit/32,768 K-byte/131,072 pages

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

l256mh113

Abstract: L256ML123R
Contextual Info: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,

APC UPS CIRCUIT DIAGRAM

Abstract: OPTICAL PICK-UP DL6 32k nsk crystal clock oscillator 32 knsk crystal clock oscillator pml 009A CIRCUIT DIAGRAM APC UPS 750 OPTICAL PICK-UP DL3 ford ecu decoding APC be 500 UPS CIRCUIT DIAGRAM APC UPS CIRCUIT DIAGRAM 500
Contextual Info: COMPART DISC PLAYER S5L9232 DESCRIPTION The S5L9232 is a one-chip LSI for Compact Disc Players including a CMOS RF, Digital Servo, CD digital signal processor, Dynamic Bass Boost, Sigma-Delta D/A converter, and Shock-proof memory controller. FEATURES The S5L9232 has the following features:

L256MH113R

Abstract: L256ML113R
Contextual Info: Am29LV256M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

Contextual Info: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

a22t

Abstract: S19G S29GL-N
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications

S29GL-N

Abstract: 1E300
Contextual Info: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this

cl-001

Abstract: MB81C1001 MB81C1001A-60 mb8l mb81c1001a
Contextual Info: FUJITSU November 1990 Edition 3.0 M 1C1001A-60/-70/-80/-10 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM T h e Fujitsu M B 8 1 C 1 0 0 1 A is a C M O S , fully decoded dynam ic R A M organized as 1 0 4 8 ,5 7 6 words x 1 bit. T h e M B 8 1 C 1 0 0 1 A has been d e s i g n e d for m ainfram e