1BW SEMICONDUCTOR Search Results

marking code 1AW

Abstract: SMB10J6.0 marking code 1ay marking code 1bx marking code 1AM SMB-10 SMB8J11C
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional polarity only

marking code 1BL Diode

Abstract: 1bw 83 marking code 1AW J-STD-002B SMB10 JESD22-B102D marking code 1ay
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional

marking 1af

Abstract: marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW
Contextual Info: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)

smb8j28

Abstract: mosfet 1ak SMB8J10C SMB10J16A SMB8J24CA SMB10J15 SMB108 SMB 1BL SMB8J26CA marking CODE 1BH
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

marking CODE 1BS

Abstract: 1AF MARKING TR marking code 1AW marking CODE 1BW marking code 1AM SMB8J5 SMB10J5 MARKING 1BW 1BW MARKING marking CODE 1BH
Contextual Info: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)

marking code 1BL Diode

Abstract: marking code 1bx mosfet 1ak 1ag marking code marking 1be marking code 1AW marking code 1Bt Diode JESD22-B102 J-STD-002 SMB10
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

Contextual Info: FAC LENS NEW Fast-Axis Collimating Lens J10919 SERIES OVERVIEW The J10919 series FAC lens is an optical lens that collimates light spreading from a semiconductor laser in the fast-axis direction. Semiconductor lasers have a large divergence angle in the fastaxis direction, so the output light cannot be efficiently used unless

EIA/CCIR

Abstract: ccd lens C8738 interline transistor 1BW 57
Contextual Info: AR Y MI N PR ELI NIR LASER BEAM MONITOR C8738 FEATURES ●Image sensor exclusive sensitivity for NIR Spectral response: from 1.48 µm to 1.6 µm ●C-mount ●Video output BNC ●Compact and lightweight ●No distortion ●Long life APPLICATIONS ●Alignment / Evaluation of semiconductor lasers

marking code 1AW

Abstract: marking code 1ay
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

marking code 1BL Diode

Abstract: mosfet 1ak 1AP marking marking code 1av marking code 1bx 1ay transistor 1Bt 87 smb8j28 1AM-7 diode marking 1BL
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional

Photoconductive Cell

Abstract: hamamatsu CDs photoconductive photoconductive cells characteristic photoconductive light sensor P1395-01 P2405 P2478-01 visible detector CDS 140 K cds light sensors
Contextual Info: VISIBLE DETECTOR CdS photoconductive cell Resin coating • dual type Low cost dual-element sensor with standard size CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye luminous efficiency , thus making

Contextual Info: VISIBLE DETECTOR CdS photoconductive cell Resin coating • dual type Low cost dual-element sensor with standard size CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye luminous efficiency , thus making

Photoconductive Cell

Abstract: photoconductive cells characteristic hamamatsu CDs photoconductive cds cell photoconductive light sensor P1096-06 P1195 P1202-12 P1202-16 P380-7R
Contextual Info: VISIBLE DETECTOR CdS photoconductive cell Resin coating type 7R,10R type Standard type designed to withstand high voltage and high power CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These

Contextual Info: Near-infrared streak camera C11293-02 New from Hamamatsu For picosecond time-resolved measurements of low level light emissions in the near-infrared region 1000 nm to 1650 nm with semiconductor photocathode (InP/InGaAs) 1400 1500 The new C11293-02 streak camera delivers much higher sensitivity in the

Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

MSM photodiode

Abstract: um 741 picosecond C4258 C4258-01 C4258-02 C4258-03 W-10 1BW semiconductor
Contextual Info: PICOSECOND PHOTODETECTOR C4258 Series Ideal for optical pulse monitors for mode-synchronized pulse lasers and semiconductors in the visible to near-infrared regions! Spectral Response Characteristics FEATURES Integrated Power Supply 100 C4258-03 C4258-02 Fast Response of 50 ps

P1201

Abstract: Photoconductive Cell photoconductive cells characteristic cds light sensors P722-5R P1201-01 cds cell photoconductive cells CDS 140 K P1082-03
Contextual Info: VISIBLE DETECTOR CdS photoconductive cell Resin coating type 5R type Standard type designed for general-purpose, wide application CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These

hamamatsu CDs photoconductive

Abstract: Photoconductive Cell photoconductive light sensor p1241 CDS light sensor photoconductive cells cds cell photoconductive cells characteristic P1241-05 P1445
Contextual Info: VISIBLE DETECTOR CdS photoconductive cell Resin coating type 5R type Standard type designed for general-purpose, wide application CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These

Contextual Info: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power semiconductor laser diode. Its active area has a specially processed surface structure that maintains good photocurrent linearity up to an incident light level 10 times higher than that

p621 b

Abstract: p368 hamamatsu CDs photoconductive p621
Contextual Info: VISIBLE DETECTOR CdS photoconductive cell Metal package type Hermetically sealed for high reliability CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye luminous efficiency , thus making their

p621 b

Abstract: hamamatsu CDs photoconductive P1114-04 p621
Contextual Info: VISIBLE DETECTOR CdS photoconductive cell Metal package type Hermetically sealed for high reliability CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye luminous efficiency , thus making their

C6544-20

Abstract: spectrophotometer automatic room light control with program 532 nm laser diode R5509-42 czerny laser gun photolum shg 1 C8232
Contextual Info: Y NA R ELI MI PR NIR SPECTROPHOTOMETER C8232 High precision photometry even at low excitation powers Material evaluation such as in semiconductor research utilizing optical excitation in the near infrared region is a promising field. However, this field has been severely limited in making:

P621

Abstract: Sunlight sensor P930 Photoconductive Cell hamamatsu CDs photoconductive P3872 P368 p621 b photoconductive cells photoconductive cells characteristic
Contextual Info: VISIBLE DETECTOR CdS photoconductive cell Metal package type Hermetically sealed for high reliability CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye luminous efficiency , thus making their

Contextual Info: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its