1SS345 Search Results

1SS345

Abstract: SB01-05SPA
Contextual Info: Ordering number :EN1918A SB01-05SPA Shottky Barrier Diode 50V, 100mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1156 [1SS345] Features · Low forward voltage (VF max=0.55V).

1148A

Abstract: 1SS345
Contextual Info: 注文コード No. N 3 1 5 7 B 1SS345 No. N 3 1 5 7 B N3099 半導体ニューズ No.3157A とさしかえてください。 1SS345 特長 シリコンエピタキシァルショットキバリア形ダイオード UHF 検波 , ミキサ用 ・端子間容量が小さい（C=0.45pF typ）

1SS345

Abstract: UHF DETECTOR
Contextual Info: Ordering number :EN3157B 1SS345 Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features Package Dimensions • Small interterminal capacitance C=0.45pF typ . · Low forward voltage and excellent detection efficiency (VF=0.35V max)

smd diode AH sot-23

Abstract: smd diode marking sot-23 marking BO SMD AH smd diode marking AH 1SS345 c045
Contextual Info: Diodes SMD Type Sillicon Epitaxial Schottky Barrier Diode 1SS345 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 High breakdown voltage VR=55V . 1 0.55 Low forward voltage and excellent detection efficiency(VF=0.35V max) +0.1 1.3-0.1 +0.1 2.4-0.1

Contextual Info: Product specification 1SS345 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 High breakdown voltage VR=55V . 1 0.55 Low forward voltage and excellent detection efficiency(VF=0.35V max) +0.1 1.3-0.1 +0.1 2.4-0.1 Small interterminal capacitance (C=0.45pF typ).

1SS345

Abstract: O259MO
Contextual Info: Ordering number :EN3157B 1SS345 Sillicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features Package Dimensions • Small interterminal capacitance C=0.45pF typ . · Low forward voltage and excellent detection efficiency (VF=0.35V max)

1SS283

Abstract: 1SS281 1SS276 1SS237 HSR276 1SS239 1SS246 1SS271 1SS282 1SS285
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

1SS276

Abstract: 1SS281 1SS246 1SS283 1SS237 HSR276 1SS239 1SS271 1SS282 1SS285
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

1SS281

Abstract: HSR276 1SS239 1SS246 1SS271 1SS276 1SS282 1SS283 1SS285 1SS286
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: SA0YO Smal 1-Signal High-Voltage Schottky Barrier Diodes 3 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.

Contextual Info: V r r m V lo (A) P ackage 150 180 - - - - SB05-03C SB05-05CP - - - PCP - SB05-05P - - - NP - SB05-05NP - - - MP - - SB05-09 - SB05-18M â B B K iB ilIB B MCP S B05-03Q CP - . 0.5 CP SB07 03C - - - - PCP SB07-03P - - - - NP SB07-03N - - - - PCP(TP) - SB10-05PCP

RD1004

Abstract: 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006
Contextual Info: ディスクリートデバイス 2010-7 環境にやさしい製品 超アナログ技術を極めるPower ＆RFデバイス Power 電 源 市 場 耐熱性 高アバランシェ 高耐圧・大電流 高効率 高ESD ・パワーマネジメント （LCDPDP、PC電源、照明）

1SS281

Abstract: 1ss237 1SS283 1SS246 1SS239 HSR276 1SS271 1SS276 1SS282 1SS285
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

Contextual Info: Continued from previous page 10 A 2 3 VRRM(V) Package type 12 15 20 30 SO 90 PCP (TP) - - - SB20-03P SB20-05P(TP) - - TO -126 - - - SB20-03B - - - TO-I26ML - - - SB20-03E - - - FLP - - - - SB20-05Z - - ISO TP - - - - SB20-05T - PCP (TP) - - - SB30-03P(TP)

diode cross reference

Abstract: diode hp 2800 motorola diode cross reference schottky diode cross reference led cross reference HP 2804 SCHOTTKY DIODES CROSS REFERENCE hp 2800 diode HSMS-3800 pin diode cross reference
Contextual Info: PIN and Schottky Diodes Cross Reference RF/mW Components Surface Mount PIN Diode Selection Guide SOT-23 Single Application VBR Attenuator 50 Ω 100 V HSMP-3800 D0 Attenuator 75 Ω 100 V HSMP-3810 E0 Dual Anode Dual Cathode Series Pair SOT-143 Common Common Unconnected

inverter in 12v DC to 220v AC 400w circuit diagrams

Abstract: step down chopper tv tube charger circuit diagrams 220v 300w ac regulator circuit 2SC5707 equivalent RD2004 2sc6096 ech8 pattern 2sc5707 Flyback Transformers SANYO TV
Contextual Info: Discrete Devices 2009-5 SANYO Discrete Devices SANYO's environmentally-considered discrete ECoP contributes to the realization of comfortable life in various aspects. Discrete devices and ExPDs power device are environmentally-considered products that well address the needs (small size, low profile, high efficiency & high reliability)

Flyback Transformers SANYO TV

Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
Contextual Info: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)

smd transistor marking 12W

Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
Contextual Info: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3

d1684

Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Contextual Info: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249

iss319

Abstract: 1SS283 1SS281 1SS237 HSM88WA 1SS239 1SS246 HSR2 HSR276 iSS295
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

1ss283

Abstract: 495h HM 1211 1SS276 1SS281 1ss237 HSM88WA ISS319 1SS239 HSR276
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

UHF DETECTOR

Abstract: 1SS345 marking AH LSS-34-5
Contextual Info: O rdering num ber: EN3157B ^_ 1 S S 3 4 5 Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications F e a tu re s •Small interterm inal capacitance C = 0.45pF typ . • Low forward voltage and excellent detection efficiency (Vp = 0.35V max)

1ss37

Contextual Info: smm Small-Signal High-Voltage Schottky Barri r Di odes 3 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.