1SS190 Search Results

marking e3 sot

Abstract: 1SS190 smd sot23 marking E3
Contextual Info: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS190 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF 3 = 0.92 V(Typ.) 0.55 Small Package 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)

1SS190

Contextual Info: RECTRON 1SS190 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC

MARKING toshiba

Abstract: 1SS190 000707EAA
Contextual Info: 1SS190 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)

ISS190

Abstract: 1SS190 marking e3 ISS19
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS190 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.92V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. N.C MARKING: E3 2. CATHODE 3. ANODE Maximum Ratings @TA=25℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes 1SS190 SWITCHING DIODE SOT—23 FEATURES １．０ Power dissipation PD : 150 mW（Tamb=25℃） Forward Current IF : 100 mA Reverse Voltage VR : 80 V Operating and storage junction temperature range

1SS190

Contextual Info: 1SS190 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Unit: mm Ultra High Speed Switching Application z Small package : SC-59 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)

Contextual Info: 1SS190 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features  High Conductance   Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

1SS190

Abstract: sot-23 marking code pd diode marking code E3 sot23
Contextual Info: BL Galaxy Electrical Production specification Surface mount switching diode 1SS190 FEATURES z Pb Low forward voltage VF 3 =0.92V(typ). Lead-free z Fast switching. z Fast reverse recovery time:trr=1.6ns(typ) APPLICATIONS z High speed switching application.

1SS190

Contextual Info: 1SS190 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.

Contextual Info: TOSHIBA 1SS190 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS190 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.5 2.5 - 0 3 Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + 0.25 1. 5 - 0.15 : SC-59 : Vjr 3 = 0.92V (Typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS190 SOT-23 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: E3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage

1SS190

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes 1SS190 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 100 m A IF : Reverse Voltage 80 V VR: Operating and storage junction temperature range

1SS190

Contextual Info: 1SS190 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.

1SS190

Abstract: robotics
Contextual Info: 1SS190 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.)

marking e3

Contextual Info: 1SS190 Switching Diodes SOT-23 1. N.C 2. CATHODE 3. ANODE Features — — Low forward voltage : VF 3 =0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: E3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol Limits

1SS190

Contextual Info: TOSHIBA 1SS190 TOSHIBA DIODE 1 SILICON EPITAXIAL PLANAR TYPE S S 1 9 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time SYMBOL VF(1)

1301C

Abstract: 1SS190
Contextual Info: 1SS190 SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED S W ITCHING APPLICATION. + CL5 FEATURES : . Small Package : SOT-23M0D . Low Forward Voltage : V f = 0 .9 2 V T y p . . Fast Reverse Recovery Time : trr=l*6ns(Typ.) . Small Total Capacitance

1SS190 equivalent

Abstract: SOT23 MARKING SB
Contextual Info: 1SS190 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L L1 MECHANICAL DATA • Case: SOT-23 Plastic

1SS190

Contextual Info: 1SS190 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS190 ○ 超高速度スイッチング用 z z z z : : : : 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm

top marking c3 sot23

Abstract: marking C3 sot-23 1SS226 c3 1SS193 F3 SOT-23 DIODE 1SS184 MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 marking G3
Contextual Info: 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Surface Mount Switching Diodes SWITCHING DIODE P b Lead Pb -Free 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications

1SS190 equivalent

Abstract: 1SS190 J-STD-020D
Contextual Info: 1SS190 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L L1 MECHANICAL DATA • Case: SOT-23 Plastic

Contextual Info: 1SS190 TO SHIBA 1 S S 1 90 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. + 0.5 2 . 5 - 0.3 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-59 : Vp 3 = 0.92V (Typ.)

Contextual Info: SMD Type Product specification 1SS190 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF 3 = 0.92 V(Typ.) 0.55 Small Package 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)

Contextual Info: 1SS190 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Unit: mm Ultra High Speed Switching Application z Small package : SC-59 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)