1N6077 Search Results

bzd10

Abstract: bzv40 bzx97 bzx98 BZW22 N6075 1N6073 1N6074 1N6075 1N6076
Contextual Info: Type No. PIW to 25°C VF IR Volts Amps Volts kA t RR Device Package MICROSEMI Recommended Substitute n sec. 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6079 50 100 15 0 50 100 150 50 3.0 3.0 3.0 6.0 6.0 6.0 12.0 2.04 2.04 2.04 1.76 1.76 1.76 1.50 1.0 1.0

Contextual Info: is t i January 7, 1998 RECTIFIER, up to 150V, 3.1 A, 30ns 1N6076 1N6077 1N6078 3FF05 3FF10 3FF15 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE Very low reverse recovery time Hermetically sealed in Metoxilite fused metal oxide

Contextual Info: 1N6077+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current6.0 V(RRM)(V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev.Rec. Time30n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)250m V(FM) Max.(V) Forward Voltage18

bzv40

Abstract: bzd10 BZX98 bzw22 BZW22/C3V3 BZX97 201 Zener diode C200 1N6073 1N6074
Contextual Info: Type No. PIW to 25°C VF IR Volts Amps Volts kA t RR 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6079 50 10 0 150 50 100 150 50 3 .0 3 .0 3 .0 6 .0 6 .0 6 .0 1 2 .0 2 .0 4 2 .0 4 2 .0 4 1 .7 6 1 .7 6 1 .7 6 1 .5 0 1.0 1.0 1.0 5 .0 5 .0 5 .0 1 0 .0 1N6080 1N60S1

1N6076

Abstract: 1N6077 1N6078 3FF05 3FF10 3FF15
Contextual Info: RECTIFIER, up to 150V, 3.1A, 30ns 1N6076 1N6077 1N6078 January 7, 1998 1997 SEMTECH CORP. 3FF05 3FF10 3FF15 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, up to 150V, 3.1A, 30ns 1N6076 1N6077

DIODE EJL

Contextual Info: r ^ r A / Z H Hl = j rF ^ n n -i^UVU U L^iU^LrnJ January 7, 1998 RECTIFIER, up to 150V, 3.1 A, 30ns IN 6O76 i n r o 77 1N6077 1N6078 3FF05 s ffio 3FF10 3FF15 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE

1N6073

Abstract: 1N6073US 1N6074 1N6075 1N6081 1N6081US 1N6081 JANTX
Contextual Info: 1N6073 thru 1N6081 VOIDLESS HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS POWER RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/503 and is ideal for high-reliability applications where a failure cannot be

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: DIGITRON SEMICONDUCTORS 1N6073-1N6081 • • • • ULTRA FAST RECTIFIERS Metallurgically bonded Ultra fast recovery Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

5d 3kv

Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage

MB345

Abstract: MB323 MB317 ES1303 MX4115 MB313 B338 914f MX3120 MB339
Contextual Info: RECTIFIER and S IG N A L S E L E C T IO N GUIDE Avg. D C Output A .5 A Package Style Reverse Ree. Time 4-5 nsec 50-100 nsec 1.0 A A A A A A A A 250-400 nsec >400 nsec 20 nsec 75 nsec 100-200 nsec 250-500 nsec >500 nsec M B207 MB341 MB313 M B314 MB342 M B316

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

tl 4311

Abstract: 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6081 DO-35 silicon Rectifier diodes MIL-PRF-19500N
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 October 2010. MIL-PRF-19500/503F w/AMENDMENT 1 28 July 2010 SUPERSEDING MIL-PRF-19500/503F 25 March 2009 PERFORMANCE SPECIFICATION SHEET

ta 8606 n

Abstract: 16664 JANTX1N5811US UES1303 21156 109-53 UES1303SM RSF0820
Contextual Info: Microserri Ultra Fast Rectifiers Part Number Microsemi Division Package Outline Type 1 Mil |Spec 1 Data Sheet ID IO Amps VR | IFSM V F @ I 3 (Volts) l (Amps) iVoits) . 'J ., : 50 ; 150 SF61 Chatsw orth D 0 -2 0 1 A D STD 14795 6 1N5808 W atertow n

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 July 2007. MIL-PRF-19500/503E 11 April 2007 SUPERSEDING MIL-PRF-19500/503D 27 December 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

diode d5c

Contextual Info: 1N6073US thru 1N6081US DESCRIPTION APPEARANCE This “Ultrafast Recovery” rectifier diode series is ideal for high-reliability applications where a failure cannot be tolerated. These 3, 6, and 12 Amp rated rectifiers TEC =70ºC in different package sizes with working peak reverse

1N60N

Abstract: 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6081 50-3-A-12
Contextual Info: MME V SPECS □ QGG1SS DG33131 T • M I L S INCH-POUNDI The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 October 1993_ J HIL-S-19500/503A 12 April 1993 SUPERSEDING MIL-S-19500/503 EL 12 May 1975

Contextual Info: 1N6073 thru Micro/semi Corp. 1N6081 * T h e texte experts SANTA ANA, CA For more inform ation call: (714 979-8220 FEA TU R ES • • • • • Triple layer passivation. M etallurgical^ bonded. Ultra fast recovery. Voidless hermetically sealed glass package.

SCDA6

Abstract: semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F 1N5415
Contextual Info: 2008 Axial Rectifiers PART NUMBERS DESCRIPTION 1N5415 through 1N5420 Fast recovery axial rectifier, 50V - 600V, Io=4.5A 1N5550 through 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 Standard recovery axial rectifier, 200V - 1000V, Io=5.0A Standard recovery axial rectifier, 200V - 1000V, Io=2.0A

Contextual Info: 1N6073 thru N6081 1 Microsemi Corp. j SANTA ANA, CA For more information call: / 714 979-8220 ’ The diode experts SCOTTSDALE, AZ j FEA T U R ES • Triple layer passivation. • Metallurgically bonded. • Ultra fast recovery. • Voidless hermetically sealed glass package.

1N914F

Abstract: 1N6542 DSR3200 1N5189 MC8936 MX4115 MB347 DSR5200 MB344 MX3120
Contextual Info: RECTIFIER and SIGNAL SELECTION GUIDE A v g . F o r w a r d R e c t ifie d C u r r e n t 0o P a c k a g e S ty le R e v e rs e R e e . T im e 4-5 nsec 50-100 nsec -5A 1.0 A A A A A A A 250-400 nsec >400 nsec 20 nsec 75 nsec 100-200 nsec 250-500 nsec >500 nsec

diode d5c

Abstract: 1N6073 1N6073US 1N6081 1N6081US
Contextual Info: 1N6073US thru 1N6081US DESCRIPTION APPEARANCE This “Ultrafast Recovery” rectifier diode series is ideal for high-reliability applications where a failure cannot be tolerated. These 3, 6, and 12 Amp rated rectifiers TEC =70ºC in different package sizes with working peak reverse