1N5391S Search Results

1N5399S

Abstract: 1N5391S
Contextual Info: 1N5391S THRU 1N5399S GENERAL PURPOSE PLASTIC SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.5 Ampere Features • Low cost • High current capability • Plastic package has Underwriters Laboratory Flammabiliy Classification 94V-O ctilizing Flame Retardant

Contextual Info:

SENSITRON SEMICONDUCTOR  1N5391S –  1N5399S 1.5A SILICON RECTIFIER Data Sheet 2579, Rev. —  Features


Diffused Junction


























































1N5391S

Abstract: 1N5399S
Contextual Info: 1N5391S THRU 1N5399S GENERAL PURPOSE PLASTIC SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.5 Ampere Features • Low cost • High current capability • Plastic package has Underwriters Laboratory Flammabiliy Classification 94V-O ctilizing Flame Retardant

Contextual Info: 1N5391S - 1N5399S 1.5 AMPS Silicon Rectifiers DO-41 Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode

Contextual Info: 1N5391S thru 1N5399S Taiwan Semiconductor CREAT BY ART FEATURES Silicon Rectifiers - High efficiency, Low VF - High current capability - High reliability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

I251

Abstract: n5392 1N5391S 1N5399S
Contextual Info: E TAIWAN 1N5391S - 1N5399S SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers tò RoHS DO-41 COM PLIANCE 1 ,1 C 7 '2 . n .0 8 0 ¡2 .0 ; DW . -J E J - Features o •> ■> ❖ <r 1 .3 ÌZ5.-1I M IN. I-p. h .205 -fi.2} High efficiency. Law VF High current capability

1n5399s

Contextual Info:

SENSITRON SEMICONDUCTOR  1N5391S –  1N5399S 1.5A SILICON RECTIFIER Data Sheet 2579, Rev. —  Features


Diffused Junction


























































Contextual Info: 1N5391S - 1N5399S Pb 1.5 AMPS Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode

1N5399S

Abstract: 1N5391S
Contextual Info: 1N5391S THRU 1N5399S GENERAL PURPOSE PLASTIC SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.5 Ampere Features • Low cost • High current capability • Plastic package has Underwriters Laboratory Flammabiliy Classification 94V-O ctilizing Flame Retardant

1N5391S

Abstract: 1N5399S
Contextual Info: 1N5391S THRU 1N5399S 1.5 AMPS. Silicon Rectifiers Voltage Range 50 to 1000 Volts Current 1.5 Amperes DO-41 Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: Molded plastic Epoxy: UL 94V-O rate flame retardant

1N5399S

Abstract: 1N5391S
Contextual Info: LITE-ON SEMICONDUCTOR 1N5391S thru 1N5399S REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes PLASTIC SILICON RECTIFIERS DO-41 FEATURES Low cost Diffused junction Low forward voltage drop Low reverse leakage current High current capability The plastic material carries UL recognition 94V-0

1N5391S

Abstract: 1N5399S
Contextual Info: IM 1N5391S - 1N5399S TAIWAN SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers DO-41 RoHS COMPLIANCE Features .205 5.2 .166 (4.2) High current capability, Low VF. -0- High reliability & Current capability. High surge current capability. Low power loss, high efficiency.

Contextual Info: 1N5391S THRU 1N5399S 硅整流二极管 General Purpose Rectifier •外形尺寸和印记 Features ● Io 1.5A ●VRRM 50V-1000V ●耐正向浪涌电流能力高 ●High surge current capability ■用途 Outline Dimensions and Mark DO-204AL DO-41 .205(5.21)

Contextual Info: 1N5391S 1N5399S THRU SILICON RECTIFIERS FEATURES: DO-2Q4AL DO-41 • Low cost • • • • 0.107(2.7) 0.080(2.0) DIA. High surge current capability Low leakage current Low forward voltage drop Diffused junction MECHANICAL DATA Case : Molded plastic use UL 94V-0 recognized flame

Contextual Info: 1N5391S - 1N5399S Pb 1.5 AMPS Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode

1N5391S

Abstract: 1N5399S
Contextual Info: LITE-ON SEMICONDUCTOR 1N5391S thru 1N5399S REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes PLASTIC SILICON RECTIFIERS DO-41 FEATURES Low cost Diffused junction Low forward voltage drop Low reverse leakage current High current capability The plastic material carries UL recognition 94V-0

Contextual Info: LITE ON POWER SEMICONDUCTOR 1N5391S thru 1N5399S REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes PLASTIC SILICON RECTIFIERS DO-41 FEATURES Low cost Diffused junction Low forward voltage drop Low reverse leakage current High current capability

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

smd marking 911 zener

Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Contextual Info: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A