1N2806 Search Results

Contextual Info: 1N2806R Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage8.2 @I(Z) (A) (Test Condition)1.5 Tolerance (%)20 P(D) Max. (W)50 Z(z) Max. (ê) Dyn. Imped.400m Temp Coef pp/10k4.8 Maximum Operating Temp (øC)175þ

Contextual Info: 1N2806RA Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage8.2 @I(Z) (A) (Test Condition)1.5 Tolerance (%)10 P(D) Max. (W)50 Z(z) Max. (ê) Dyn. Imped.400m Temp Coef pp/10k4.8 Maximum Operating Temp (øC)175

DO13

Abstract: do-13 DO15 1N2806 1N2814 1N3316 1N2826 1N2827 1N2808 1N6066A
Contextual Info: Zener Diodes Page 1 of 1 Home Device Type Package Device Type Package Device Type Package Device Type Package 1N2804 TO-3 1N2991B DO-4 1N3344 DO-5 1N6044A DO-13 1N2805 TO-3 1N2992B DO-4 1N3345 DO-5 1N6045A DO-13 1N2806 TO-3 1N2993B DO-4 1N3346 DO-5 1N6046A

1N2820B JANTXV

Abstract: 1N2825B JAN 1N2829B JANTX 1N2807B 1N2822B JANTXV 1N4557B JANTX 1N4560B JAN 245 zener 46B zener 1N2804
Contextual Info: 1N2804 thru 1N2846B and 1N4557 thru 1N4564B 50 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE These high power 50 W Zener diodes represented by the JEDEC registered 1N2804 thru 1N2846B and 1N4557 thru 1N4564B series provide voltage regulation in a selection over a 3.9 V to 200 V broad range of voltages. They

Z82D5

Abstract: "Zener Diodes" 1n5048 1N5008 1N4189 1N4730 zener 1N4653 1N4671 1n4849 1N5012 1N4171
Contextual Info: GUIDE TO AVAILABLE AXIAL LEADED ZENER DIODES Pow er E arly In d u stry S ta n d a rd E arly In d u stry S ta n d a rd L o w N o ise L o w C u rre n t M il - S p e c L o w C u rre n t 50 u A Low Leakage L o w N o is e L o w C u rre n t M il - S p e c In d u stry

IN2804

Abstract: 1N2829B JANTX 1N2831B JANTX 1N2809 1N2822B JANTXV 1N2843B JANTX 1N4560B 1N2811 1N2813 1N2814
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 December 2007. INCH-POUND MIL-PRF-19500/114G 20 September 2007 SUPERSEDING MIL-PR-19500/114F 21 August 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR B AND RB TYPES,

LZ-230 zener diode

Abstract: lz 04 "50 watt zener diode" zener 7.5 B 47
Contextual Info: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current |ZM TYPE NO. Zener Voltage V z @ lz Test Current lz

1N4564

Abstract: 1N2806 1N3307 1N2814 1N3316 1N3326 1N2826 1N3327 1N2827 1N3328
Contextual Info: 50 WATT ZENER DIO DES TO-3 AND DO-5 CASE FEATURES: • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded • Complete Characteristic Listing • Low Thermal Impedance DESCRIPTION This series of high grade voltage regulator diodes is designed

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

1N4564

Abstract: 1N3340 1N2804 1N2846 1N3305 1N3350 1N4549 1N4550 1N4556 1N4557
Contextual Info: DE~|b3b7a5S 007Ô0G7 7 MOTOROLA SC -CDIODES/OPTO} T -//- / ? 1N2804 thru 1N2846 MOTOROLA 6.8V thru 200V Case 54-05 SEM ICO NDUCTOR 1N3305 thru 1N3350 TECHNICAL DATA 6.8V thru 200V (Case 58-01) 1N4549thru 1N4556 3.9V thru 7.5V (Case 58-01) 1N4557thru 1N4564

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Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete

IN4773

Abstract: IN2976 IN4773A IN536 1N29B IN4772 1H28 IN2822 IN2621 1N137
Contextual Info: TEX/ SEflIT R O N IC S CORP^ 27E I> • MAbTEm, 0DD0314 4 ■ semitron hot iine -r-n - 01 - T ' H - II TOLL FREE NUMBER 800-777-3960 discrete devices silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt m T 1N42# 1N1735 Norn.

n4558

Abstract: MIL-STD 19500 Motorola N2977B 1N2990BR MOTOROLA 1n746 1N3336BR LN298 1N3313BR 1N3316BR 1N4557A
Contextual Info: General-Purpose Regulator Diodes continued Nominal Zener Voltage ('N ote 1) 10 Watt Cathode to Case = 1N3993 & MZT2970 Series Anode to Case = 1N2970 Series (•Notes 2,10,12) Metal Case 56 (DO-4) NOTES 50 Watt Cathode to Case = MZT4549 Series Anode to Case

1N2804

Contextual Info: 1N2804 thru 1N2846B and 1N4557 thru 1N4564B 50 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE These high power 50 W Zener diodes represented by the JEDEC registered 1N2804 thru 1N2846B and 1N4557 thru 1N4564B series provide voltage regulation in a selection over a 3.9 V to 200 V broad range of voltages. They

50 Watt Zener Diode

Abstract: 10 watt zener diode LN298 1N2990B TLC 1050 diode Lz zener ZENER DIODE 1N2976B zener diode 1n4553B 6.8 B1 zener 1N2991B
Contextual Info: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current IZM TYPE NO. Zener Voltage V z @ lz Test Current lz

zener 245

Abstract: 245 zener 10 watt zener diode ZENER DIODE 1N2976B diode Lz zener LN298 50 Watt Zener Diode 1N2828B 1N2990B 1N2991B
Contextual Info: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 Maximum Zener Current Test Current lz Zener Impedance Zz Volts mA 1N2990B 1N2991B 1N2992B 1N2993B 1N2994B 33 36 39 43 45 75 70 65 60 55 Ohms

1N2806

Abstract: 1N3307 1N3326 1N2827 1N2814 1N3328 1N3327 1N2826 1N3316 1N4564
Contextual Info: SENICON COMPONENTS ZAE INC D 0135157 0000Ô25 b • 7^//' ¡ 9 50 WATT ZENER DIODES TO-3 AND DO-5 CASE FEATURES: • Hermetic Seal • High Temperature Operation DESCRIPTION This series of high grade voltage regulator diodes is designed to meet the electrical and environmental requirements of the

1n2620

Abstract: 1N4564 1N2625 1N2613 1N2626 in2819 1N2804 1N2846 1N3305 1N3350
Contextual Info: MOTOROLA SC { D I O D E S / O P T O * D E~|b3 b 7 a 5 S 0 0 7 Ô0 G7 T -//- / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N2804 thru 1N2846 1N3305thru 1N3350 1N4549 thru 1N4556 1N4557thru 1N4564 6.8V thru 200V Case 54-05 6.8V thru 200V (Case 58-01) 3.9V thru 7.5V (Case 58-01)

zener diode 50w

Abstract: 1N2807B 1N28 diode 1N2810B JAN 1N4559B JANTX 245 zener 1N28 1N2804 1N2804B 1N2846B
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 50 WATT ZENER DIODES Qualified per MIL-PRF-19500/114 DEVICES LEVELS 1N2804B thru 1N2846B & RB and 1N4557B thru 1N4564B & RB

MOTOROLA POWER TRANSISTOR

Abstract: TO36 package 2N554 Motorola germanium transistor pnp 2N174 2N1545 motorola mesa transistors 1N2621A 2N398A 2N1358 JAN
Contextual Info: m a r c h RESTRICTED WPS Document Ccx OtC _ "* "1 A R EP O R T ON MOTOROLA SE M IC O N D U C T O R R E L IA B IL IT Y D u rin g the past y ear great strides have been m a d e in M o to ro la 's Q uality A ssu ran ce P ro g ram to provide assurance o f reliability . . . as well as a reliable product.

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

ECG transistor replacement guide book free

Abstract: philips ecg master replacement guide one chip tv ic 8873 ecg semiconductors master replacement guide philips ecg semiconductors master replacement guide cd 1619 CP fm radio smd transistor 5AW replacement of bel 187 transistor ecg philips semiconductor master book SUBSTITUTE FOR A bel 187 transistor
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete

1N5349

Abstract: 1N5359 1N4705 1N5360 1N2827 1N2806 1N3316 1N2826 1N5126 N4709
Contextual Info: GUIDE TO AVAILABLE AXIAL LEADED Z E N E R D IO D ES Early Industry Standard 250 mw D O -35 D O -7 Early Industry Standard Pow er 250 mw DO -35 DO -7 L ow Noise Low Current Mil - Sp e c 250m w D O -35 D O -7 V z Volts 1.8 2.0 [M il-S 19500/435] 2.2 2.4 2.7