19JUN08 Search Results
19JUN08 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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90025E3Contextual Info: 116 RLL Vishay BCcomponents Aluminum Capacitors Radial Long Life FEATURES Fig.1 Component outline 048 RML miniaturized 148 RUS • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case, all-insulated light blue |
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18-jul-0890025e3 | |
IRF634N
Abstract: IRF634NL IRF634NS SiHF634N SiHF634N-E3 SiHF634NS SiHF634NS-E3
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irf634nirf634nlirf634nssihf634n+8 | |
16901-130
Abstract: 16901-130B S050FA RPN honeywell
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OCR Scan |
f0-55118-arpns050fa1a21x01jul0800v/m+5 | |
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Contextual Info: Jz_ FO-55118-A HONEYWELL REV CHANGE DOCUMENT A 0040247 P A R T NUMBER R PNS090CA1A11 X CHANGED BY VS CHECK 2 3J UN08 BLR Technical Data Function A ng ular S ensor S ensor principle Measuring range M echanical end stop S upply voltage Current consum ption max. |
OCR Scan |
fo-55118-apns090ca1a1100v/m114its+3 | |
NT0602Contextual Info: Jz_ F O -5 5 1 1 8 -A HONEYWELL P A R T NUMBER RPNS18ÖDA2A11X REV CHANGE DOCUMENT A 0040247 CHANGED BY VS CHECK 23JUN08 BL R Technical Data Function Angular Sensor Sensor principle Measuring range Mechanical end stop Supply voltage Current consumption max. |
OCR Scan |
rpns18da2a11x23jun0810-30vdc+4 | |
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Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 5.5 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 22 Qgs (nC) |
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irf730asihf730aan1001o-220+1 | |
SiHF740SContextual Info: IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 9.0 Qgd (nC) 32 Configuration • Available in Tape and Reel 0.55 Available RoHS* • Dynamic dV/dt Rating |
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irf740ssihf740ssmd-22012-mar-07 | |
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Contextual Info: 10TTS08S High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 10 A DESCRIPTION/FEATURES The 10TTS08S High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass |
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10tts08s12-mar-07 | |
E78996 scr
Abstract: 16T MARKING 16TTS 16TTS08FP 16TTS12FP
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16ttso-220abe7899618-jul-08+4 | |
IRF624
Abstract: SiHF624 SiHF624-E3
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irf624sihf624o-22018-jul-08+1 | |
10TTS08
Abstract: SCR10A 10TTS08S SMD-220 c7210
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10tts08o-220absmd-22010tts08s+3 | |
scr25
Abstract: 937-02 25TTS08 25TTS 25TTS12 EQUAL TO 25tts12
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25ttso-220ab18-jul-08scr25+4 | |
RPNS090AA1B11A
Abstract: ISO DIN 1101
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OCR Scan |
aa1b11a23jun0800v/m16901-130b+3 | |
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Contextual Info: F0-55118-A V HONEYWELL PART NUMBER RPNS090AA1A11X REV CHANGE DOCUMENT A 0040247 CHANGED BY VS CHECK 23JUN08 BLR Technical Data Function Angular Sensor S e n s o r prin cip le C o n ta c t-fre e , H all effe c t Measuring range 90° M e ch a n ica l end stop |
OCR Scan |
f0-55118-arpns090aa1a11x23jun0816901-130b+1 | |
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Contextual Info: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC) |
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irf624sihf624o-22012-mar-07 | |
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Contextual Info: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements Configuration |
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irf614sihf614o-22012-mar-07 | |
E78996 scrContextual Info: 16TTS.FP High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FP High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass |
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16ttso-220abe7899612-mar-07+1 | |
10TTS08Contextual Info: 10TTS08 High Voltage Series Vishay High Power Products Phase Control SCR, 10 A DESCRIPTION/FEATURES The 10TTS08 High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass |
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10tts08smd-22010tts08so-220ab+1 | |
10TTS08
Abstract: 10TTS08S AN-994 SMD-220 Single phase half wave bridge converter
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10tts08s18-jul-0810tts08an-994+2 | |
AN1001
Abstract: IRF730A SiHF730A SiHF730A-E3
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irf730asihf730aan1001o-220+2 | |
80EPS16Contextual Info: 80EPS16 High Voltage Series Vishay High Power Products Input Rectifier Diode, 80 A DESCRIPTION/FEATURES Base cathode 4, 2 TO-247AC 1 Anode 3 Anode PRODUCT SUMMARY VF at 80 A 1.17 V IFSM 1450 A VRRM 1600 V The 80EPS16 rectifier High Voltage Series has been |
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80eps16o-247ac18-jul-08 | |
MAL204272109E3
Abstract: 2222 041-043 Aluminum Electrolytic Capacitor 042 AHH-ELB
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18-jul-08mal204272109e32222 041-043 aluminum electrolytic capacitor042 ahh-elb | |
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Contextual Info: IRF744, SiHF744 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 450 RDS(on) (Ω) Available VGS = 10 V • Repetitive Avalanche Rated 0.63 Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 12 • Ease of Paralleling Qgd (nC) |
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irf744sihf744o-22012-mar-07 | |
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Contextual Info: IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.85 RoHS 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling Qgd (nC) 32 • Simple Drive Requirements |
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irf840lsihf840lo-26212-mar-07 | |