19JUL07 Search Results

BAT60B

Abstract: w5 marking
Contextual Info: BAT60B Surface Mount Schottky Barrier Diode P b Lead Pb -Free Features: * High Current Rectifier Schottky Diode with Low VF drop * Low Voltage, Low inductance * For Power Supply * For detection and step-up-conversion Mechanical Data: * Case: SOD-323, Plastic

MIL-PRF-55365

Abstract: T97E227 vs 40.09-2 T97E108 T97V477
Contextual Info: T97 Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Hi-Rel COTS, Ultra-Low ESR, Conformal Coated Case FEATURES • High reliability; Weibull Failure Rate Grading available Pb-free Available • Surge current testing per MIL-PRF-55365 options available

74808

Abstract: AN609 Si2337DS
Contextual Info: Si2337DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74818

Abstract: SI4634 AN609 Si4634DY
Contextual Info: Si4634DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

mosfet 7193 c

Abstract: AN609 Si3465DV
Contextual Info: Si3465DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

mosfet 4501

Abstract: mosfet 8000 AN609 Si4626DY 74817
Contextual Info: Si4626DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

MOSFET 4407

Abstract: 4407 mosfet 4407 74811 4407 datasheet 4507 mosfet 9434 0624 CIRCUIT 4407 AN609
Contextual Info: Si3529DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

rr1206

Contextual Info: VISHAY FOIL RESISTORS Resistive Products Technical Note Resistor Sensitivity to Electrostatic Discharge ESD Introduction For most of us, electrostatic discharge (ESD) and static electricity are little more than the shock received when touching a metal doorknob after walking along a carpeted

0745

Abstract: MTZJ5.1B
Contextual Info: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ5.1B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

MTZJ20B

Contextual Info: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ20B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

414 transistor

Abstract: mtzj6
Contextual Info: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ6.2B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

injection

Abstract: MTZJ24B
Contextual Info: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ24B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

MTZJ27B

Abstract: diode 0476
Contextual Info: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ27B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

8b diode

Contextual Info: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ6.8B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

BV 726

Abstract: MTZJ MTZJ7.5B
Contextual Info: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ7.5B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

MTZJ15B

Contextual Info: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ15B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

627 DIODE

Abstract: MTZJ10B
Contextual Info: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ10B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

Contextual Info: REVISIONS THIRD ANGLE PROJ. NOTES: 1 . MATERIALS AND FINISHES PLATING THICKNESS IN M ICRO-INCHES : BODY - ZINC DIECAST, NICKEL PLATING CONTACT - PHOSPHOR BRONZE, GOLD PLATING AT MATING AREA, BRIGHT TIN PLATING AT TAIL INSULATOR - POLYPROPYLENE, NATURAL LOCK W ASH ER- S50C, NICKEL PLATING

VO14642AT

Abstract: VO14642AABTR C2073-2 81646 VO14642AAB
Contextual Info: VO14642AT/AABTR Vishay Semiconductors 1 Form A Solid State Relay 20091 S' S 6 DC 5 S' 4 1 2 3 S' i179031-1 DESCRIPTION The VO14642AT are high speed SPST normally open 1 Form A solid-state relay in a DIP-6 package. The relays are constructed as a multi-chip hybrid device.

74804

Abstract: AN609 Si3433BDV 348679
Contextual Info: Si3433BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

42640-2

Abstract: 7438 AN609 Si3951DV
Contextual Info: Si3951DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

MTZJ9.1B

Contextual Info: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ9.1B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

MTZJ11B

Contextual Info: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ11B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

MTZJ22B

Contextual Info: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ22B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current