19JUL01 Search Results

M27C160

Abstract: PDIP42 PLCC44 Q15A SDIP42
Contextual Info: M27C160 16 Mbit 2Mb x 8 or 1Mb x 16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 50ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE 42 42 ■ 16 Mbit MASK ROM REPLACEMENT 1 ■ LOW POWER CONSUMPTION FDIP42W (F) 1 PDIP42 (B)

DS1225

Abstract: M48Z08 M48Z18
Contextual Info: M48Z08 M48Z18 5V, 64 Kbit 8Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM AND POWER-FAIL CONTROL CIRCUIT UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION

S 1854

Abstract: M27C160 5220 U 00059 M27C16
Contextual Info: M27C160 16 Mbit 2 Mb x 8 or 1 Mb x 16 UV EPROM and OTP EPROM Features • 5V ± 10% Supply Voltage in Read Operation ■ Access Time: 50 ns 42 42 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u

FTS256K

Abstract: HCS12 MASER FTS256K Block User Guide
Contextual Info: DOCUMENT NUMBER S12FTS256KV2/D FTS256K Block Guide V02.03 Original Release Date: 08 FEB 2001 Revised: 11 MAR 2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described herein;

FTS128K

Abstract: HCS12
Contextual Info: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12FTS128KV2/D Freescale Semiconductor, Inc. FTS128K Block User Guide V02.01 Original Release Date: 19 JUL 2001 Revised: 8 APR 2003 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

FTS256K

Abstract: HCS12 ff092 FTS256K Block User Guide
Contextual Info: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12FTS256KV3/D Freescale Semiconductor, Inc. FTS256K Block User Guide V03.00 Original Release Date: 08 FEB 2001 Revised: 16 OCT 2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

Si4482DY

Contextual Info: . SPICE Device Model Si4482DY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12EETS4KV2/D Freescale Semiconductor, Inc. EETS4K Block User Guide V02.07 Original Release Date: 22 FEB 2001 Revised: 8 APR 2003 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

FTS128K

Abstract: HCS12
Contextual Info: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12FTS128KV1/D Freescale Semiconductor, Inc. FTS128K Block Guide V01.03 Original Release Date: 19 JUL 2001 Revised: 11 MAR 2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

M27C160

Abstract: FDIP42WB JESD97 PDIP42 PLCC44 Q15A SDIP42
Contextual Info: M27C160 16 Mbit 2 Mb x 8 or 1 Mb x 16 UV EPROM and OTP EPROM Features • 5V ± 10% Supply Voltage in Read Operation ■ Access Time: 50 ns ■ Byte-wide or Word-wide Configurable ■ 16 Mbit Mask ROM Replacement ■ Low Power Consumption – Active Current: 70 mA at 8 MHz

Contextual Info: 7 DRAWING THIS MA D E IN THIRD DRAWING ANGLE 15 UNPUBLI5HED COPYRIGHT 6 5 19 RELEASED BY AM P FOR PUBLICATION INCORPORATED. ALL 4 <3> PROJECTION 3 2 INTERNATIONAL RIGHTS DI ST L OC 19 REV I 5 I0N5 64 FT RESERVED. LTR Z O NE D E S C R I R T I ON D P IN #1

DS1225

Abstract: M48Z08 M48Z18 THE M48Z
Contextual Info: M48Z08 M48Z18 5V, 64 Kbit 8Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM AND POWER-FAIL CONTROL CIRCUIT UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION

FTS64K

Contextual Info: DOCUMENT NUMBER S12FTS64KV1/D Original Release Date: 19 JUL 2001 Revised: 11 MAR 2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described herein;

Contextual Info: 7 DRAWI NG MADE THIS IN THIRD DRAWING ANGLE 15 U N P U B L I 5 H E D COPYRIGHT 6 B 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL 4 <3> PROJECTIO N 3 2 INTERNATIONAL RIGHTS DI S T LOC 19 FT RESERVED. REV I 5 I0N5 64 ZONE LTR J K D E S C R I R T I ON

FTS256K Block User Guide

Abstract: FTS256K ff092
Contextual Info: DOCUMENT NUMBER S12FTS256KV3/D FTS256K Block User Guide V03.01 Original Release Date: 08 FEB 2001 Revised: 8 APR 2003 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

DS1225

Abstract: M48Z08 M48Z18
Contextual Info: M48Z08 M48Z18 5V, 64 Kbit 8Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM and POWER-FAIL CONTROL CIRCUIT ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION

FTS128K

Abstract: HCS12
Contextual Info: DOCUMENT NUMBER S12FTS128KV1/D Original Release Date: 19 JUL 2001 Revised: 11 MAR 2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described herein;

4K x 8 EEPROM Memory

Contextual Info: DOCUMENT NUMBER S12EETS4KV2/D EETS4K Block Guide V02.04 Original Release Date: 22 FEB 2001 Revised: 11 MAR 2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described herein;

M27C160

Abstract: FDIP42WB JESD97 PDIP42 PLCC44 Q15A SDIP42
Contextual Info: M27C160 16 Mbit 2 Mb x 8 or 1 Mb x 16 UV EPROM and OTP EPROM Features • 5V ± 10% Supply Voltage in Read Operation ■ Access Time: 50 ns ■ Byte-wide or Word-wide Configurable ■ 16 Mbit Mask ROM Replacement ■ Low Power Consumption – Active Current: 70 mA at 8 MHz

Contextual Info: I 7 THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR POR ATE D. ALL FOR PUBLICATION R IG H T S , 6 5 19 REVISIONS DI ST LOC R ES ER V ED . FT 64 P LTR D D 1. RECEPTACLE ACCEPTS THK I . C . LEAD. AN 2\ TWO 0 . 0 0 0 7 6

FTS128K1

Abstract: HCS12
Contextual Info: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12FTS128K1V1/D Freescale Semiconductor, Inc. FTS128K1 Block User Guide V01.05 Original Release Date: 08 FEB 2001 Revised: 01 APR 2003 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

FTS512K4

Abstract: HCS12 ff092
Contextual Info: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12FTS512K4V1/D Freescale Semiconductor, Inc. FTS512K4 Block User Guide V01.06 Original Release Date: 08 FEB 2001 Revised: 01 APR 2003 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

LIN protocol basics

Abstract: mitsubishi ecu car alternator LIN protocol 2.0 chrysler ecu LIN 2.0 alternator engine ecu basics Car Central lock system mitsubishi LIN protocol volvo protocol specification bmw ecu
Contextual Info: MITSUBISHI ELECTRIC EUROPE SEMICONDUCTOR LIN ´Local Interconnect Network “M i t s u b i s h i P a r t n e r f o r A u t o m o t i v e” Topics • LIN Introduction / Specification • Potential LIN Applications • CAN-LIN Gateway / Products • LIN Protocol Implementation