19J CASE Search Results

TLC10CN

Abstract: TLC20CN TLC20 tlc10 MF10ACFN
Contextual Info: TLC10/M F10A. TLC20/MF10C UNIVERSAL DUAL SWITCHEO-CAPACITOR FILTER D 2 95 2 , AUGUST 1 9 8 0 -R E V IS E D NOVEMBER 1988 N DUAL-IN-LINE PACKAGE Maximum Clock to Center-Frequency Ratio Error TLC10 . . . ±0.6% TLC20 . . . ±1.5% TOP VIEW 1 Ü2LP 2 19J 2BP

7864a

Abstract: r02f TH7864A
Contextual Info: • ^ Q S b ö 7 2 o o o n a b a ? o TH 7864A FRAME TRANSFER CCD IMAGE SENSOR 576 x 550 PIXELS WITH ANTIBLOOMING Fully Compatible with CCIR TV Standard VDD tl,R |20] 19J |1SJ Ü2J V[ R VS vOS V* 11^ |f£l '"iM '■’îM [13| [JE] 111J 2/3" Optics Compatible Image Format (11 mm

7866A

Abstract: 7864A
Contextual Info: ^02bß?2 0002003 55Ö • TH 7866A FRAME TRANSFER CCD IMAGE SENSOR 488 x 550 PIXELS WITH ANTIBLOOMING Fully Compatible with EIA RS170 TV Standard V DD [20j R VDR VS <t> v VOS ~A VA <t> <t> ~2M [19J H8J 117J [16J H5] 114J 113J <I> ~1M ~3M Llä lüJ 2/3” Optics Com patible Im age Format 11 mm

Contextual Info: A dvanced P o w er Te c h n o l o g y P O W E R M A P T 200V 2 0 M 19J 112A V R 0.01 9CÌ O S V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

12392

Contextual Info: I I 4 HADE IN THIRD ANGLE PROJECTION TH IS DRAWING IS UNPUBL JSHED. COPTRIOHT IS _ 1 . RELEASED FOR PU B LIC A TIO N BY A M P INCORPORATED. < 3 ,1 9 L OC . D IS T AG 53 ALL INTERNATIONAL RIGHTS RESERVED. REVJS10N5 ZONE LT R D 123.70£4.873 12-3-92 7&L

LAS19U

Abstract: Las series current regulators circuit las19u las19up 1905B LAS19A12 voltage regulators 10 amp to3 voltage regulators 20 amp to3 TN60 1915B
Contextual Info: SEMTECH CORP S&E J> LAS 1900 Q0D317E 5 AMP POSITIVE VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS •X' PARAMETER SYMBOL Input Voltage FEATURES MINIMUM V|N Power Dissipation Pd Thermal Resis­ tance Junction To Case 0JC Operating Junction Tem­ perature Range

high frequency amplifier

Abstract: 2N918 MHQ918 to-116
Contextual Info: MHQ918 silicon QUAD DUAL IN-LINE NPN SILICON HERMETIC ANNULAR HIGH FREQUENCY AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON HIGH FREQUENCY AMPLIFIER TRANSISTORS . designed fo r low-level, high-gain a m plifier Applications. • L ow Noise Figure — @ l c = 1.0 mAdc

Contextual Info: M54HC4028 M74HC4028 f Z J S G S -T H O M S O N ^ 7 # ffiÆ0 K Q 0E[L I(O T M 10(ê§ BCD-TO-DECIMAL DECODER • HIGH SPEED tPD = 25 ns (TYP.) at VCc = 5V ■ LOW POWER DISSIPATION lCC = 4 (¿A (MAX.) at TA = 25°C 16 n . - V ■ HIGH NOISE IMMUNITY V NIH = V NIL = 2 8 % V q c (MIN.)

LM715

Contextual Info: LM715 National mm Semiconductor LM715 High Speed Operational Amplifier General Description Features The LM715 is a high speed, high gain, monolithic operation­ al amplifier intended for use in a wide range of applications where fast signal acquisition or wide bandwidth is required.

1.0KE70

Abstract: 1.0KE14 1.0KE12 1.0KE24A 10ke6
Contextual Info: Microsemi Corp. The äKxJe e*perts SANTA ANA, CA SCOTTSDALE, A Z 1.0 K E 5 thru 1.0 K E 1 7 0 A For m ore inform ation call: 602 941-6300 FEATURES • AVAILABLE IN RANGES FROM 5.0 TO 170 VOLTS • AVAILABLE IN BIDIRECTIONAL FOR AC APPLICATIONS • LOW CLAMPING RATIO

lcm 116

Abstract: LCM 553
Contextual Info: SANTA ANA. CA SCOTTSDALE, AZ For more information call: , <602 941-6300 FEATURES This series employs a standard TAZ in series with a rectifier with the same transient capabilities as the TAZ. The rectifier is used to reduce the effective capacitance up thru 100 MHz with a minimum amount of signal loss or

Contextual Info: * SYNERGY S IN G L E S U P P LY I " PECl./TTL -TO-PECl. C ioch vVorns 3Y100S811 S E M IC O N D U C T O R FEATURES • PECL version of popular ECLinPS El 11 ■ Low skew ■ Guaranteed skew spec ■ V s b o u tp u t ■ TTL enable input ■ Selectable TTL or PECL clock input

M54451P

Abstract: M54820P M54820 M54451 M5482 m53290 M54812L M53290P 74ls931 5hz frequency GENERATOR
Contextual Info: MITSUBISHI BIPOLAR DIGITAL ICs M54820P FREQUENCY COUNTER W IT H 5 -D IG IT LED D R IVER DESCRIPTION The M54280P is an l 2 L semiconductor integrated circu it PIN CONFIGURATION TOP VIEW consisting o f a frequency counter and a 5-digit LED driver, for use in driving 7-segment LED display elements.

Contextual Info: 82C87H HARRIS S E M I C O N D U C T O R CMOS Octal Inverting Bus Transceiver August 1996 Features • Operating Temperature Range - C82C87H. 0°C to +70°C • Full Eight Bit Bi-Directional Bus Interface

Contextual Info: H A -24 00/88 3 ffl h a r r i s PRAM Four Channel Programm able O perational Amplifier January 1989 Features Description • This Circuit is Processed In Accordance to Mil-Std883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-2400/883 is a four channel programmable amplifi­

H301

Abstract: MC10905 MC10H181 MC10H304 rc 3150 FI154
Contextual Info: M O T O R O L MC10H304 A A d v a n c e I nf or ma t io n L SUFFIX CERAM IC PACKAGE CASE 620 8-BIT/DUAL 4-BIT PARITY CHECKER P SUFFIX The MC10H304 produces a fast, 8-bit parity checker including a 4-bit parity check on each of the two 4-bit nibbles. This device

4 digit counter circuit diagram max plus

Abstract: 7207a ICM7208 decade counter display multiplex 1mhz Ultrasonic generator schematic circuit Ultrasonic generator schematic circuit ICM7207 ICM7208IPI Ultrasonic power generator schematic MHz frequency counter
Contextual Info: IC M 7 2 0 8 D IM Ü ^ O IL CMOS 7 Decade Counter FEATURES DESCRIPTION • • • • Low operating power dissipation < 10mW Low quiescent power dissipation < 5mW Counts and displays 7 decades Wide operating supply voltage range 2V l . V+ •_ 6V Drives directly 7 decade multiplexed common

M54822P

Abstract: M5482 m54822 455KH
Contextual Info: M IT S U B IS H I B IP O L A R D IG ITA L IC s M54822P MITSUBISHI D6TL LOGIC 31E » • (324=1027 DDlMböM 2 ■ MIT3 F R E Q U E N C Y C O U N T E R W IT H 4 - D IG IT F L U O R E S C E N T D R IV E R 3 - 2 -1 D ESC R IPT IO N PIN C O N FIG U R A T IO N (TOP VIEW )

Contextual Info: g M O T O R O L A Wideband FSK Receiver The M C 3356 includes Oscillator, Mixer, Lim iting IF Am plifier, Q uadrature D etector, Audio Buffer, S quelch, M e te r D rive, Squelch Status output, and Data S haper com parator. The M C 3356 is desig n ed fo r use in d igital data

LR3715M

Abstract: LU59002 CSB455E SI 01007
Contextual Info: SHARP ELEK/ MELEC iS E D IV D I a ia a v ia a c m i? ^ Remote Control Receiver LSI a LU59002 T-77-11 LU59002 • Remote Control Receiver LSI Description Pin Connections T he LU59002 is a CMOS LSI developed for in­ frared remote contorol receivers. Used together with the LR3715M transmitter, a

transistor A6A6

Abstract: SM64C64
Contextual Info: SM64C64, SMJ64C64 16,384-WORD BY 4-BIT STATIC RAMS JU LY 1 987 - 16.384 x 4 Organization JD PACKAGE Common I/O {TOP VIEW Military Temperature Range . . . - 5 5 ° C to 125°C M Suffix) Fast Static Operation 19 ] A 2 18 ] A 1 17 ] A 0 16 ] D Q 4 A1 0 [ 6

HT 3786 d

Abstract: HT 3786 PBL3786 Ericsson PBL HT 12E APPLICATION 100-P 891135A
Contextual Info: ERICSSON COMPONENTS INC IbE D • 3373t.a0 GDPlbflO ERICSSON á T ■ September 1989 _ T - lS - C n - tK PBL 3786/02 Voice-switched Speakerphone Circuit Description Key features The PBL 3786/02 contains all the necessary circuitry, amplifiers, detectors, compara­

diode zener ZD H2

Abstract: BTS410 bts410 siemens BTS 410 E2 E3043 235L 410E2 410H BTS410H2 ZD11 Q67060-S6105
Contextual Info: û235hD5 QOfilbOl T7fl S IE M E N S PROFET BTS410H2 Smart Highside Power Switch F eatures • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump Fast demagnetization of inductive loads

M 14606

Abstract: BZV55C6V1 MLL5221B mlu714 BZV55C4V3
Contextual Info: MOTOROLA sc DIODES/OPTO b4E » • b3L7ESS 00 8 54 37 S3T SECTION 4.2.4 DATA SHEETS ZËNER VOLTAGE REGULATOR DIODES — continued Section 4 .2 A 2 Surface Mounted — continued SECTION 4.2A 2.2 500 mW LEADLESS (DO-34 BODY SIZE) MULTIPLE PACKAGE QUANTITY (MPQ)