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    190N12NS Search Results

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    190N12NS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC190N12NS3 G

    MOSFETs N-Ch 120V 44A TDSON-8 OptiMOS 3
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    Mouser Electronics BSC190N12NS3 G 3,919
    • 1 $2.20
    • 10 $1.41
    • 100 $0.95
    • 1000 $0.67
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    Infineon Technologies AG BSC190N12NS3GATMA1

    MOSFET, N-CH, 120V, 44A, TDSON;
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    Newark () BSC190N12NS3GATMA1 Cut Tape 4,679 1
    • 1 $2.29
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    BSC190N12NS3GATMA1 Tape & Reel 4,679 100
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    BSC190N12NS3GATMA1 Tape & Reel 5,000
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    TME BSC190N12NS3GATMA1 5,000
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    EBV Elektronik BSC190N12NS3GATMA1 53 Weeks 5,000
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    Win Source Electronics BSC190N12NS3GATMA1 6,050
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    Infineon Technologies AG BSC190N12NS3G

    OptiMOS3 Power-Transistor
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    Win Source Electronics BSC190N12NS3G 6,600
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    190N12NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode d39

    Abstract: d39 marking 190N12NS IEC61249-2-21 JESD22
    Contextual Info: 190N12NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 120 V • N-channel, normal level R DS on ,max 19 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 44 A • Very low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature


    Original     		BSC190N12NS3 IEC61249-2-21 190N12NS diode d39 d39 marking 190N12NS IEC61249-2-21 JESD22 PDF

    JESD22

    Abstract: 190N12NS diode d39
    Contextual Info: 190N12NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 19 mΩ ID 44 A • Very low on-resistance R DS(on) • 150 °C operating temperature


    Original     		BSC190N12NS3 190N12NS JESD22 190N12NS diode d39 PDF