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    190N12NS Search Results

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    190N12NS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC190N12NS3GATMA1

    MOSFET N-CH 120V 8.6A/44A TDSON
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    DigiKey BSC190N12NS3GATMA1 Reel 5,000
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    Avnet Americas () BSC190N12NS3GATMA1 Reel 15,000 26 Weeks 5,000
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    BSC190N12NS3GATMA1 Bulk 1
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    Newark () BSC190N12NS3GATMA1 Cut Tape 3,196 1
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    BSC190N12NS3GATMA1 Reel 5,000
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    Chip One Stop BSC190N12NS3GATMA1 Cut Tape 14,503 0 Weeks, 1 Days 1
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    Chip Stock BSC190N12NS3GATMA1 153,724
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    IBS Electronics BSC190N12NS3GATMA1 5,000 5,000
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    Win Source Electronics BSC190N12NS3GATMA1 11,918
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    Infineon Technologies AG BSC190N12NS3 G

    MOSFETs N-Ch 120V 44A TDSON-8 OptiMOS 3
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    Mouser Electronics BSC190N12NS3 G 23,338
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    Infineon Technologies AG BSC190N12NS3G

    OptiMOS3 Power-Transistor
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    Win Source Electronics BSC190N12NS3G 141,224
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    190N12NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode d39

    Abstract: d39 marking 190N12NS IEC61249-2-21 JESD22
    Contextual Info: 190N12NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 120 V • N-channel, normal level R DS on ,max 19 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 44 A • Very low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature


    Original     		BSC190N12NS3 IEC61249-2-21 190N12NS diode d39 d39 marking 190N12NS IEC61249-2-21 JESD22 PDF

    JESD22

    Abstract: 190N12NS diode d39
    Contextual Info: 190N12NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 19 mΩ ID 44 A • Very low on-resistance R DS(on) • 150 °C operating temperature


    Original     		BSC190N12NS3 190N12NS JESD22 190N12NS diode d39 PDF