18PLCC Search Results

Contextual Info: 19-0 94 1 ; R ev 2 ; 7/95 J V \ J V X A J V \ . General Description TheMX7541A is high performance CMOS multiplying 12-bit digital-to-analog converter DAC . Low power operation and 12 bit (0.012%) linearity make it suitable for a wide range of precision data acquisition and

MX7541

Contextual Info: y u y jx iy k i CMOS 12 B it M ultiplying D/A Convertor - Features ♦ 12 Bit Linearity 1/2 LSB + 1 LSB Gain Accuracy + Guaranteed Monotonic + Low Power Consumption + Four-Quadrant Multiplication + TTL and CMOS Compatible

41C1000

Abstract: KM41C1000CJ-7 KM41C1000C-6 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
Contextual Info: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

1000CLP

Contextual Info: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

Contextual Info: PACKAGE DIMENSIONS D im e n sio n s in M ilim e ters 8 - D P -3 0 0 n n r~i n 12-D IPH -300 12 n n n n n n LS □ 6 !o U T T ' LT U 167 Cl CP ELECTRONICS PACKAGE DIMENSIONS D im e n sio n s in M ilim e ters 14-DIPH-300 ~i i— i : • o “ci! cn cn □

Contextual Info: b?E J> m SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 0Ü1S3ÖG SS3 KM41C1000C CMOS DRAM 1Mx1 Bit C M O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e ra n g e : T h e S am sung KM41C1000C is a C M O S high speed 1,048,576x1 D ynam ic R andom A ccess M emory. Its

KM41C1000CJ-6

Abstract: KM41C1000cJ-7 KM41C1000C-6 KM41C1000C-8 KM41C1000CP-6 KM41C1000CG-7 741i DRAM 18DIP km41c1000 KM41C1000CP-7
Contextual Info: SAMSUNG E L E C TRONICS INC b?E ]> • 7=îtim42 0G153Ö0 553 I SMGK KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

KM41C1000CLP

Abstract: KM41C1000CLJ DRAM 18DIP KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 Scans-001144 samsung hv capacitor
Contextual Info: SAMSUNG ELECTRONICS INC b7E T> 7RbMmH 00153^7 flS7 • CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

DRAM 18DIP

Abstract: KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 DRAM 256kx4
Contextual Info: SAMSUNG ELE CTRONICS INC b?E ]> Wt 7 ^ 4 1 4 2 KM41C1000CSL 0015414 ?hh SM6K CM O S DRAM 1Mx1 Bit CM O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM 41C1000CSL is a C M O S high speed 1,048,576x1 Dynamic Random A cce ss Memory. Its

Contextual Info: SAMSUNG ELECTRONICS INC b7E ]> 7 = ^ 4 1 4 2 0 0 1 5 4 1 4 7bb H S f l G K CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

47IlF

Abstract: T3D85 T3D 8 KM41C1000CSLP6
Contextual Info: CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications