18JUN2001 Search Results

M29W017D

Abstract: TFBGA48
Contextual Info: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical

Contextual Info: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface

Contextual Info: C O P Y R I G HT 20 00 R E L E A S E D F OR P U B L I C A T I O N FREI FUER VERÖFFENTL IC HUNG RIGHTS RESERVED. BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . AlA LI LF RFTHTF Vil RR FH AI TFN. ^ATED W I T H : FASSEND ZU: 2000 LOC D I ST A REV I S I O N S

M41ST85W

Abstract: M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28
Contextual Info: M41ST85W 3.0/3.3V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features • ■ SNAPHAT SH battery & crystal Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM)

Contextual Info: C O P Y R I G HT 20 00 R E L E A S E D F OR P U B L I C A T I O N FREI FUER VERÖFFENTL IC HUNG RIGHTS RESERVED. BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . AlA LI LF RFTHTF Vil RR FH AI TFN. 2000 ^ATED W I T H : FASSEND ZU: LOC REV I S I O N S

200B

Abstract: 700B SD56120 balun 50 ohm
Contextual Info: SD56120 RF power transistor, the LdmoST family Features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power

1-1437719-2

Contextual Info: BY C O P Y R I G HT 2000 TYCO E LECTR O N IC S R E L E A S E D FOR P U B L I C A T I O N FREI FUER VERÖFFENTLICHUNG CO R PO R ATIO N . A LL R IG H T S R E S E R V E D . 2000 ^ATED WITH: FASSEND ZU: LOC REV D I ST A AI I F R F T H T F VTIRRFHAI T F N .

Contextual Info: C O P Y R I G HT 20 00 R E L E A S E D F OR P U B L I C A T I O N FREI FUER VERÖFFENTL IC HUNG RESERVED. BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . AIA LI LF RRFITGHHT FT SVTIRRFHAI TFN . 2000 ^ATED W I T H : FASSEND ZU: LOC REV I S I O N S

Contextual Info: RELEASED FOR PU BLICATIO N 10-JUL- 20 0 ' ^ATED WITH: F A S S E N D ZU: FREI C O P Y R I G FI T 2 0 0 1 BY TYCO ELECTRO NICS FUER V E R Ö F F E N T L I C H U N G ALL RIGHTS RESERVED. CORPORATION. Al I F RFTHTF LOC REV I S I O N S D I ST AENDERUNGEN A V T IR R F H A I T F N .

KDS 32kHZ crystal

Abstract: quartz crystal kds 70 AN1572 M41ST84W AN1012 AI005
Contextual Info: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface

Contextual Info: R E L E A S E D FOR P U B L IC A T IO N FREI FUER V E R O E F F E N T L I C H U N G M A T E D W I TH: E S S E N D Z U: ALL RIGHTS RESERVED. Al I F RFFHTF VÍ1RRFHAI TFN. C O P Y R I G H T 20 00 REVISIONS AEND ERUNQEN LTR DESCRIPTION DATE DWN APVD BF SF HRF I RUNfi

TECHNICAL SPECIFICATION DATA SHEET GOLD 705

Abstract: M41ST85W M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28 AN934 24JAN NVRAM
Contextual Info: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features SNAPHAT SH battery & crystal • Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM) ■

AN1012

Abstract: M41ST84W block diagram of energy saving ABE smd
Contextual Info: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface ■ 3.0/3.3 V operating voltage

balun 50 ohm

Abstract: 200B 700B JESD97 SD56120 TSD56120
Contextual Info: SD56120 RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100W with 14dB gain @ 860MHz ■ BeO free package Description

Contextual Info: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical

M28W640CB

Abstract: M28W640CT TFBGA48 A0-A21
Contextual Info: M28W640CT M28W640CB 64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.3V for Input/Output – VPP = 12V for fast Program (optional)

M4T32-BR12SH6

Contextual Info: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features SNAPHAT battery & crystal • Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM LPSRAM ■ 400 kHz I2C serial interface

Contextual Info: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features • ■ SNAPHAT battery & crystal Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM LPSRAM 400 kHz I2C serial interface

6-1437719-0

Contextual Info: C O P Y R I G HT 20 00 R E L E A S E D F OR P U B L I C A T I O N FREI FUER VERÖFFENTL IC HUNG RIGHTS RESERVED. BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . AlA LI LF RFTHTF Vil RR FH AI TFN. 2000 ^ATED W I T H : FASSEND ZU: LOC REV I SI ONS

Contextual Info: BY C O P Y R I G HT 2001 TYCO E LECTR O N IC S R E L E A S E D FOR P U B L I C A T I O N FREI FUER VERÖFFENTLICHUNG CO R PO R ATIO N . A LL R IG H T S R E S E R V E D . Al I F RFTHTF Vil RR FH AI TFN. 10-JUL- 20 0' LOC ^ATED WITH: FASSEND ZU: REV I S I O N S

A0-A21

Abstract: M28W640CB M28W640CT TFBGA48
Contextual Info: M28W640CT M28W640CB 64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.3V for Input/Output – VPP = 12V for fast Program (optional)

Contextual Info: C O P Y R I G HT 2000 R E L E A S E D FOR P U B L I C A T I O N FREI FUER V E R Ö F F E N T L I C H U N G RESERVED. B Y T Y C O E L E C T R O N I C S C O R P O R A T I O N . AIA LI LF RFR ITGH HT FT SVTIRRFHAI TFN. 3 WAY 3 POL IG 2000 L OC ^ATED W I T H :

M29W017D

Abstract: TFBGA48
Contextual Info: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical

Contextual Info: SD56120 RF power transistor, the LdmoST family Features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power