18JUL07 Search Results

Contextual Info: 4 TH IS DRAWING IS U N P U B L IS H E D . RELEASED BY "RCO COPYRIGHT 2 4 ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS REVIS IO N S - - R E S ER V ED . G P LTR D E S C R IP TIO N A1 REV PER ECR 0 7 - 0 1 6 4 6 9 DATE DWN APVD 18JUL07 JR TM D D 1\ S T A M P

Analog Devices space qualified

Contextual Info: Low-Noise Precision Instrumentation Amp AMP01 1.0 2.0 3.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as modified herein.

M7928

Abstract: as 893 m 4112 ring terminal B152 B545 893max
Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . C O P Y R IG H T RELEASED BY ^ C O E L E C T R O N IC S C O R P O R A T IO N . FO R ALL P U B L IC A T IO N R IG H T S - REVIS IO N S - RESERVED. G LTR D E S C R IP T IO N A1 DATE REV PER ECR 0 7 - 0 '

ARM LPC2148 application notes

Abstract: Philips LPC2148 reference manual LPC2xxx SPI master code example LPC2148 interfacing circuit with adc LPC2148 interfacing circuit with adc using pwm AN10513 application notes lpc2148 LPC2148 DC motor program ARM7 LPC2129 UART trigger interrupt lpc2148
Contextual Info: LPC2109/2119/2129 Single-chip 16/32-bit microcontrollers; 64/128/256 kB ISP/IAP flash with 10-bit ADC and CAN Rev. 06 — 10 December 2007 Product data sheet 1. General description The LPC2109/2119/2129 are based on a 16/32-bit ARM7TDMI-S CPU with real-time

Contextual Info: WTN9575 Surface Mount P-Channel Enhancement Mode Power MOSFET P b Lead Pb -Free DRAIN CURRENT -4.0 AMPERES DRAIN SOURCE VOLTAGE 2,4 DRAIN -60 VOLTAGE 1 GATE Features: 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 SOURCE * Super high dense cell design for low RDS(ON)

AMP01

Contextual Info: Friday, Mar 14, 2008 4:34 PM / Low-Noise Precision Instrumentation Amp AMP01 1.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II

M7928

Abstract: TM 1298 696422-7 B152 B545 MIL-T-7928
Contextual Info: 2 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED BY ^ C O C O P Y R IG H T E L E C T R O N IC S C O R P O R A T IO N . RO R ALL P U B L IC A T IO N R IG H T S - R E V IS IO N S .- RESERVED. G LTR A1 D D E S C R IP T IO N REV PER DATE E C R 0 7 —0 '

H2257

Contextual Info: H2257H06A5B Vishay High Power Products HEXFREDTM Die in Wafer Form PRODUCT SUMMARY VF 1.2 V maximum VBR 600 V Wafer 5" FEATURES RoHS • 100 % tested at probe COMPLIANT • Available in tape and reel upon request • Chip pack, and sawn on film (part number shown is for die

RDR-91

Abstract: Power Integrations TNY279PG yw-360-02b SNX-R1380
Contextual Info: Title Reference Design Report for a 12 W Power Supply Using TinySwitchTM-III TNY278PG Specification 85-265 VAC Input, 12 V, 1 A Output Application TinySwitch-III Reference Design Author Applications Engineering Department Document Number RDR-91 Date February 11, 2013

Contextual Info: H2195H06A5B Vishay High Power Products HEXFREDTM Die in Wafer Form PRODUCT SUMMARY VF 1.2 V maximum VBR 600 V Wafer 5" FEATURES RoHS • 100 % tested at probe COMPLIANT • Available in tape and reel upon request • Chip pack, and sawn on film (part number shown is for die