186 DIOD Search Results

Contextual Info: DBM-186 DBM-186 Wideband Double Balanced Microwave Mixer 10MHz to 4000MHz DBM-186 is a miniature double balanced mixer that combines microwave performance with the economy and convenience of a TO-8 package. Five unique transformers and eight matched Schottky diodes

VARI-L

Abstract: vari-l dbm 107D DBM-186 varil OQ-N-290
Contextual Info: DBM-186 T0.8 Packaged Wideband Double Balanced Microwave Mixer 10-4000 MHz DESCRIPTION DBM-186 is a miniature double balanced mixer that combines microwave performance with the economy and convenience of a T0-8 package. Five unique transformers and eight matched Schottky diodes

107D

Abstract: 204C 213B DBM-186
Contextual Info: DBM-186 TO-8 Packaged Wideband Double Balanced Microwave zsw enm fcr m tm m ts DESCRIPTION DBM-186 is a miniature double balanced mixer that combines microwave performance with the economy and convenience of a TO-8 package. Five unique transformers and eight matched Schottky diodes

107D

Abstract: 204C 213B DBM-186
Contextual Info: DBM-186 TO-8 Packaged Wideband Double Balanced Microwave m Q ID tm a dintmn fcrfjiieuoflfiijcfs DESCRIPTION DBM-186 is a miniature double balanced mixer that combines microwave performance with the economy and convenience of a TO-8 package. Five unique transformers

XC2064

Abstract: xc2064-70pc44c x5397 XC2000 XC2018 XC3020 XC4000 XC4002A xc206470pc44c x5399
Contextual Info:  XC2000 Logic Cell Array Families Table of Contents Overview . 2-186 XC2000 Logic Cell Array Families . 2-187 Architecture . 2-187

Contextual Info: _u _ N AUER PHILIPS/DISCRETE • ObE D bbS3T31 00113bl T ■ BYV33F SERIES T-03-19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes,

BYV33F

Abstract: BYV33F-40A BYV33F-35 M0810
Contextual Info: _u_ N AMER PHILIPS/DISCRETE OLE D • 1^53131 Ü0113bl T BYV33F S E R IE S T-03-19 ' SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes,

14.3f

Contextual Info: BYV143F SERIES y v. SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Low-leakage platinum -barrier double rectifier diodes in SOT-186 full-pack plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. Their electrical

TA317

Abstract: M3142 Ultra Fast Recovery Double Rectifier Diodes BYQ28F BYQ28F-50
Contextual Info: SbE D • 711002b □ □ m S I D DID ■ PHIN BYQ28F SERIES 1 PHILIPS INTERNATIONAL T - 0 3 - 1 7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic

Contextual Info: MA46601-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.400f C1/C2 Min. Capacitance Ratio2.1 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.7.5k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

Contextual Info: MA46607-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5p C1/C2 Min. Capacitance Ratio3.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.5.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

Contextual Info: MA46614-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2p C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.4.3k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

Contextual Info: MA46603-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.600f C1/C2 Min. Capacitance Ratio2.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.6.5k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

BYW29F

Contextual Info: 25E D N AMER PH ILIPS/DISCRETE • ^53131 002274*1 3 ■ X ' BYW29F SERIES 7 3 0 3 - /7 ULTRA FAST RECOVERY, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in S O T -186 full-pack envelopes, featuring

Contextual Info: MA46610-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio2.7 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.6.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

z188

Abstract: lg diode Z182-186 LG power board
Contextual Info: SIEMENS LG Z181 LG Z182-186 LG Z188, 180 SINGLE 2 to 6 DIODE ARRAYS 8, 10 DIODE ARRAYS Green Miniature LED Lamp FEATURES * Green Diffused Lens * Miniature Size * 0.100' 2.54 mm Lead Spacing * End Stackable to Arrays of Any Length * 1C Compatible DESCRIPTION

Contextual Info: MA46611-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.600f C1/C2 Min. Capacitance Ratio3.1 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.5.5k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

Contextual Info: MA46602-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio2.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.7.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

Contextual Info: MA46615-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5p C1/C2 Min. Capacitance Ratio4.5 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.4.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

Contextual Info: MA46617-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.2p C1/C2 Min. Capacitance Ratio4.9 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.3.6k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

BYV32F

Abstract: BYV32F-50
Contextual Info: BYV32F SERIES T -03-1 7 PHILIPS INTERN A T I O N A L SbE J> 711002b J V_ 00413bfl âlfl • PHIN ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic

TOLD2000fDA

Abstract: TCD2703ADG TCD1709DG TCM8230 tyco igbt module 25A TOLD2000MDA TLSU225 TOLD2000 TLP250 MOSFET DRIVER application note TLYH180PF
Contextual Info: Optical Semiconductor Devices Visible Laser Diodes z 146 Visible LEDs z 147 Photo Sensors z 156 Photo Couplers & Photo Relays z 159 Fiber-Optic Devices TOSLINK z 186 Image Sensors z 190 145 Visible Laser Diodes Maximum Ratings (Tc = 25°C) Optical output

Contextual Info: MA46600-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio1.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.8.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E

Contextual Info: MA46618-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7p C1/C2 Min. Capacitance Ratio5.1 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.3.3k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E