1838 B Search Results

2SA1838

Abstract: J-10
Contextual Info: Ordering num ber:EN 4665 No-4665 //_ 2SA 1838 PNP Epitaxial Planar Silicon Transistor Il // Muting Circuit Applications Features • Very small-sized package permitting 2SA1838-applied sets to be made small and slim. • Small output capacitance.

MAX632

Abstract: MAX6323 MAX6324 UT26 UT46
Contextual Info: 19-1838; Rev 1; 1/01 µP Supervisory Circuits with Windowed Min/Max Watchdog and Manual Reset The watchdog pulse output (WDPO) utilizes an opendrain configuration. It can be triggered either by a fast timeout fault (watchdog input pulses are too close to

VARISTOR 595 -PH

Abstract: WIRE GAUGE 24 AWG VARISTOR 595 D7777ZOV231RA730 Z231
Contextual Info: HIGH ENERGY SERIES VARISTOR SPECIFICATION SHEET Date: 11/14/2008 MAIDA STYLE NUMBER D7777ZOV231RA730 Electrical Specifications MAIDA ITEM NUMBER 01-1838 Physical Specifications Continuous AC Voltage 230 VAC Lead Style Continuous DC Voltage 300 VDC X Nominal

Contextual Info: THIS DRAWI NG IQ . IS XXX^XXXXXXX UNPUBLISHED. COPYR IGHT 979 BY AMP HOLLAND B . V . ALL DIST LOC date R E V I S I ONS R IGH TS RESER VED . H © 1 J LTR D E SC R IP T IO N tn > APVD EH-1838-99 22-Dec-99 TvdM EH-0290-99 09-Feb-99 MN - - 1

Contextual Info: CMOS DOT MATRIX HIGH DUTY LCD DRIVER • • • • CMOS 128-Bit Segment Driver High Voltage Resistant Output 1/100 to 1/300 in Display Duty CMOS High Voltage Resistant Process • DESCRIPTION The SED1620 is a 128 output dot matrix LCD segment column driver for driving high-capacity LCD panels

ADF4153

Abstract: KJ1367 TB-552 9434 8 pin integrated circuit
Contextual Info: Frequency Synthesizer 50Ω SSN-1932A-119+ 1832 to 1932 MHz The Big Deal • Low phase noise and spurious • Very small size 0.60" x 0.60" x 0.138" CASE STYLE: KJ1367 Product Overview The SSN-1932A-119+ is a Frequency Synthesizer, designed to operate from 1832 to 1932

Contextual Info: RED INDICATES ORIGINAL D A T A C O N T A I N E D IN T H I S D O C U M EN T IS P R O P R IE T A R Y TO T R O M P ET ER E L E C T R O N IC S IN C . A ND S H A L L NOT B E D IS C L O S E D . C O P IE D OR USED F O R P R O C U R E M E N T O B M A N U F A C T U R E W IT H O U T

Contextual Info: 5 - 1 0 0 MHz Standard Hybrid Amplifier Specification limit Parameters 5- 10 0 M H z bandwidth Temperature Very low noise figure Small signal gain +25 Frequency range Units °c -55 to +85 MHz 5 -1 0 0 16.5 ± 0.5 Gain vs. temperature High reverse isolation

Contextual Info: IS$F 8K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • The IS S I IS62C64 is a low power, 8,192-word by 8-bit static RAM. It is fabricated using IS S I's high-performance CMOS technology. C M O S low power operation — 4 0 0 m W m ax. operating

Contextual Info: IS62C51216AL IS65C51216AL 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES PRELIMINARY INFORMATION FEBRUARY 2009 DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high- • High-speed access time: 45ns, 55ns speed, 8M bit static RAMs organized as 512K words by 16

IR 1838 T

Abstract: 1838 pin configuration ir IR 1838 T Pin number IR 1838 1838 T IR 1838 TO PIN DIAGRAM 1838 t pin diagram 1838 ir IR 1838 3.3 v CS40
Contextual Info: CYM1838 PRELIMINARY CYPRESS 128K x 32 Static RAM Module Features Functional Description • High-density 4-megabit SRAM module • High-speed CMOS SRAMs — Access time of 25 ns • 66-pin, 1.1-inch-square PGA package • Low active power — 4.0W max. • Hermetic SMD technology

IRGPH50MD2

Abstract: IRGPH50KD2 irgph50kd2 e 035H IRFPE30
Contextual Info: PD- 95189 IRG4PH50KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

microprocessors interface 8086 to 8251

Abstract: USART 8251 interfacing with 8051 microcontroller to design a full 18*16 barrel shifter design USART 8251 18*16 barrel shifter design microprocessors architecture of 8251 USART 8251 expanded block diagram cqfp100 P2QFP100-GH-1420 full 18*16 barrel shifter design
Contextual Info: CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

TL 1838

Abstract: ITT 2222 A Mitel Semiconductor process flow to design a full 18*16 barrel shifter design pic 1840 ATS 16Mhz MITEL CLA full 18*16 barrel shifter design
Contextual Info: CLA90000 SERIES j j j j ivilTEL HIGH DENSITY CMOS GATE ARRAYS s b m Sc o n â î c t o r DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Sem icon­ ductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

Contextual Info: DC-DC 50-200 Watts ICH/IFH Series xppower.com • 2:1 & 4:1 Input Ranges • Efficiency up to 90% • Single Output • -40 °C to +100 °C Operating Temperature • Continuous Short Circuit Protection • Five-sided Metal Case • 3 Year Warranty Specification

smd TRANSISTOR code marking 2F

Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838
Contextual Info: Preliminary Data Sheet PD-20605 rev. A 01/99 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits

irm 1838

Abstract: 237 DT2 transistor HFA32PA120C 32PA120 PA120C
Contextual Info: HFA32PA120CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 16 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

TRANSISTOR C483

Abstract: IRGPH50MD2
Contextual Info: International S Rectifier PD - 9.1047A IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces — 1200V Short circuit rated -1 0 j s @125°C, VGe= 15V Switching-loss rating includes all "tail" losses

IR 1838 T

Abstract: IR 1838 IR 1838 3v HFA16PB120 IRFP250 vs 1838 b
Contextual Info: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4

2SC1811

Abstract: 2SA896 138D 2SA1015
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: Bulletin PD -2.492 rev. B 09/02 HFA16TB120 HEXFRED TM Ultrafast, Soft Recovery Diode BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 2 1 • Reduced RFI and EMI

Contextual Info: HFA16TB120S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • BENEFITS 2 1 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

Contextual Info: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4

IS62C5128BL

Abstract: b0628 IS65C5128BL
Contextual Info: IS62C5128BL, IS65C5128BL 512K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 45ns • Low Active Power: 50 mW typical • Low Standby Power: 10 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply