18341 Search Results

Contextual Info: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

1933E

Abstract: caption 1AB3 25816 bc136 BC154 CR16 mitsubishi cr64 cr65 VP1160 vp251
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

L111LG

Abstract: upd78f power ic of lg tv UPD78F9418 M4585
Contextual Info: IC dependsnce of oscillating characteristics UPD78F9418 FCR4.0HC5 - STO It«i IC M O N . ». m V1H/V1L k. Ro o m Temp. Vdd CV] 5 m m m . 23 5.5 15 5.5, 83 5.5 A .4 .4 e. Dtkl d. CuSl t. CXI ite* a-e f. CV3 g. CV] Fotc Tritt Arty Vrtirt Vhold 4.0822 138 Sl.S

tr2c

Abstract: DB9M NULL DATASHEET DB9M fm transmitter 5km BHX2-458-5-SMA MAX232 for level converter RS232 serial to parallel AFS2-458 MAX232 transceiver fsk baud carrier uhf
Contextual Info: W E N Radiometrix Hartcran House, 231 Kenton Lane, Harrow, HA3 8RP, England Issue A, 03 April 2008 Tel: +44 0 20 8909 9595, Fax: +44 (0) 20 8909 2233 BHX2 NBFM MultiMulti-channel 500mW UHF Transceiver The BHX2 transceiver module offers a 500mW RF power output in the UK

Contextual Info: SFH1617A Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS, 110 °C Rated FEATURES • Operating temperature from - 55 °C to + 110 °C • Good CTR linearity depending on forward current • Isolation test voltage, 5300 VRMS

Contextual Info: ILD1615/ ILQ1615 Vishay Semiconductors Optocoupler, Phototransistor Output Dual, Quad Channel , 110 °C Rated Features • Operating temperature from - 55 °C to + 110 °C • Identical Channel to Channel Footprint • Dual and Quad Packages Feature: - Reduced Board Space

Contextual Info: ILD1615, ILQ1615 Vishay Semiconductors Optocoupler, Phototransistor Output, Dual, Quad Channel , 110 °C Rated Dual Channel FEATURES A 1 8 C C 2 7 E • Operating temperature from - 55 °C to + 110 °C A 3 6 C • Identical channel to channel footprint C 4

merlin gerin NS100N

Abstract: merlin gerin catalogue Merlin Gerin shunt trip mx merlin gerin C60 multi 9 Merlin Gerin ns160n merlin gerin C60n Merlin Gerin CIRCUIT BREAKER merlin gerin NS250h C60H Circuit Breakers Catalogue merlin gerin C60n - 24338
Contextual Info: Catalogue 2004 Merlin Gerin Miniature circuit-breakers and earth leakage circuit-breakers MCBs/ELCBs contents page Miniature circuit-breakers RCCB / ELCB Technical information Mini pragma din kit Merlin Gerin C60a 2 C60N 3 C60H 4 C60N UL489 - DC circuit breaker

merlin gerin C120n

Abstract: C120N MERLIN c120n 18363 MERLIN GERIN 18365 merlin gerin 18361 18357 18387 18364 18367
Contextual Info: Защита цепей EN 60898: 10000 ГОСТ Р 51345-99 C120N Автоматические выключатели МЕ01 Кpивые B, C и D Кол-во Кол-во полю- модулей сов Ш = 9 мм Ном. № по каталогу ток

BAR63V-03

Abstract: BAR63V-03-GS08 BAR63V-03-GS18
Contextual Info: BAR63V-03 Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

SFH1617A

Abstract: SFH1617A-1 SFH1617A-2 SFH1617A-3 SFH1617A-4 VDE0884
Contextual Info: SFH1617A Vishay Semiconductors Optocoupler, High Reliability, 5300 VRMS, 110 °C Rated Features • Operating temperature from - 55 °C to + 110 °C • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VRMS • High Collector-Emitter Voltage, VCEO = 70 V

Contextual Info: BAR63V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: W E N Radiometrix Hartcran House, 231 Kenton Lane, Harrow, HA3 8RP, England Issue 2, 03 June 2008 Tel: +44 0 20 8909 9595, Fax: +44 (0) 20 8909 2233 TR2M Narrow Band FM MultiMulti-channel UHF Transceiver UK Version: TR2M-458-5, TR2I-458-5 (100mW) European version: TR2M-433-5, TR2I-433-5 (10mW)

Contextual Info: Hartcran House, 231 Kenton Lane, Harrow, Middlesex, HA3 8RP, England Tel: +44 0 20 8909 9595, Fax: +44 (0) 20 8909 2233, www.radiometrix.com Issue 1, 26 July 2012 BHX2 1234546789ABCDEEF75 535DEBF9F The BHX2 transceiver module offers a 500mW RF power output in the UK

Contextual Info: ILD1615/ ILQ1615 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output Dual, Quad Channel , 110 °C Rated Features • Operating temperature from - 55 °C to + 110 °C • Identical Channel to Channel Footprint • Dual and Quad Packages Feature:

Contextual Info: BAR63V-06W Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-05 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-05 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-04W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-03 VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-04 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-04W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-03W VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than