182MW Search Results

Contextual Info: RCD100N20 Nch 200V 10A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCD100N19 Nch 190V 10A Power MOSFET Datasheet lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.

C10N19

Abstract: RCD-100
Contextual Info: RCD100N19 Datasheet Nch 190V 10A Power MOSFET lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.

Contextual Info: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES. PRODUCT MAY BE MADE OBSOLETE WITHOUT NOTICE 128K x 8 FLASH MFM8126 - 70/90/12 Issue 4.3 : April 2001 Features • Fast Access Time of 70 / 90 / 120ns. • Operating Power Read 182mW Max Program/Erase 305mW (Max)

C10N19

Abstract: RCD100N
Contextual Info: RCD100N19 RCD100N19 Datasheet Nch 190V 10A Power MOSFET lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.

Contextual Info: RCD100N20 Nch 200V 10A Power MOSFET Data Sheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

RCD100N19

Contextual Info: RCD100N19 Nch 190V 10A Power MOSFET Datasheet lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.

SOIC-16

Abstract: VDE0884 AMC1203 IEC60747-5-2 IEC61010-1
Contextual Info: AMC1203 www.ti.com SBAS427B – FEBRUARY 2008 – REVISED MAY 2010 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator Check for Samples: AMC1203 FEATURES DESCRIPTION • • • • • • • The AMC1203 is a 1-bit, 10MHz, isolated delta-sigma ΔΣ modulator with an output buffer separated from

Contextual Info: AMC1203 SBAS427C – FEBRUARY 2008 – REVISED JUNE 2011 www.ti.com 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator Check for Samples: AMC1203 FEATURES DESCRIPTION • • • • • • • The AMC1203 is a 1-bit, 10MHz, isolated delta-sigma ΔΣ modulator with an output buffer separated from

Contextual Info: HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT IDT71V321S/L IDT71V421S/L I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • H igh-speed access — Industrial: 25ns max. — C om m ercial: 25/35/55ns (max.) • Low -power operation

Intel 2118

Abstract: MB811B-10 DIP-16P-M01
Contextual Info: MB8118-10 MB8118-12 FU JITSU M ICROELECTRONICS NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The MB8118 is fabricated using silicon-gate NMOS and Fujitsu’s ad­ vanced Double-Layer Polysilicon process. This process, coupled with single-transistor memory storage

MD5 5vDC

Abstract: INS64 DMS-100 64 pin euro connectors Euro 64 MT128SMI isdn modem MT128SMI-L pinout rs232 to rj45 RS-232 wire
Contextual Info: SocketModem ISDN Embedded ISDN Modem Benefits • ISDN BRI modem with S/T interface • Quick time-to-market • Universal socket connectivity The SocketModem® ISDN embedded modem creates communication-ready devices by integrating BRI ISDN functionality and an S/T interface into a single, universal socket design. The space-efficient 1" x 2.5" modem

5k0000

Abstract: 0I30
Contextual Info: DATA SHEET VPN-400 A Bulk MetaPFoil Ultra Precision Miniature Voltage Dividers TCR and Ratio Matched C O M P A N Y C F VISHAY FOIL RESISTORS ▼ Models: VHD200, VHD144, 300144, VSR144 High Level Performance Guaranteed Quality Temperature Coefficient of Resistance

VHD200

Abstract: VHD144
Contextual Info: VHD200, VHD144 Vishay Foil Resistors Bulk Metal Foil Technology Small Package, Ultimate Tracking Voltage Dividers FEATURES • Temperature Coefficient of Resistance: Nominal TCR: 0.6ppm/°C 0° to 60°C 2.0ppm/°C (– 55° to + 125°C) TCR Tracking: VHD200 to ± 0.1ppm/°C

5k0000

Abstract: VHD200
Contextual Info: VHD200, VHD144 Vishay Foil Resistors Bulk Metal Foil Technology Small Package, Ultimate Tracking Voltage Dividers FEATURES • Temperature Coefficient of Resistance: Nominal TCR: 0.6ppm/°C 0° to 60°C 2.0ppm/°C (– 55° to + 125°C) TCR Tracking: VHD200 to ± 0.1ppm/°C

10K000

Abstract: 300144Z (Z-Foil)
Contextual Info: 300144Z, 300145Z Z-Foil Technology Vishay Foil Resistors Ultra High Precision Z-Foil Voltage Divider Resistors with TCR Tracking to 0.1 ppm/°C and Resistance Match to ± 0.005% (50 ppm) FEATURES P R O D U C T Any value at any tolerance available within resistance range

1.5ppm

Abstract: VSR144
Contextual Info: VSR144 Vishay Foil Resistors Bulk Metal Foil Technology Industrial Grade Miniature Voltage Divider FEATURES • Temperature Coefficient of Resistance: Nominal TCR: ± 4ppm/°C 0° to 60°C • TCR Tracking: 1.5ppm/°C Product may not be to scale • Ratio Stability: < ± 0.001% (10ppm) under load-life

Contextual Info: MITSUBISHI LSIs M H 4 S 7 2 C J - 1 0 ,- 1 2 ,- 1 5 301,989,888-B IT 4 ,194,304-W Q R D BY 72-B IT S ynchronous D YNAM IC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION PIN CONFIGURATION The MH4S72CJ is an 4M word by 72-bit Synchronous

Contextual Info: LTC2142-12/ LTC2141-12/LTC2140-12 12-Bit, 65Msps/ 40Msps/25Msps Low Power Dual ADCs DESCRIPTION FEATURES n n n n n n n n n n n n n The LTC 2142-12/LTC2141-12/LTC2140-12 are 2-channel simultaneous sampling 12-bit A/D converters designed for digitizing high frequency, wide dynamic range signals.

10k000

Contextual Info: 300144, 300145 Vishay Foil Resistors Bulk Metal Foil Technology Small Package, Ultimate Tracking Voltage Dividers FEATURES • Temperature Coefficient of Resistance: See Figures 1 and 2 in data sheet “7 Technical Reasons to Specify Bulk Metal® Foil Resistor Networks.”

LDO sot23

Abstract: APP1861 CMPT2222A MAX1735 MAX1735EUK25 RMC18-18RJB transistor sot23-3 RMC181
Contextual Info: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: pass transistor, linear regulator, LDO, increase LDO current, more load current Jan 24, 2003 APPLICATION NOTE 1861 Pass Transistor Boosts Current from Negative Linear Regulator Abstract: The addition of a pass transistor to the circuit of Figure 1 allows the linear regulator LDO to deliver

AMC1203

Abstract: IEC60747-5-2 IEC61010-1 VDE0884
Contextual Info: AMC1203 www.ti.com . SBAS427A – FEBRUARY 2008 – REVISED MARCH 2009 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator

Contextual Info: AMC1203 www.ti.com SBAS427 – FEBRUARY 2008 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator FEATURES DESCRIPTION • • • • • • • The AMC1203 is a 1-bit, 10MHz, isolated delta-sigma ΔΣ modulator with an output buffer separated from

AZ81CH24DA

Abstract: AZ8-1CH-24DEA az8 relay
Contextual Info: AZ8 MINIATURE PC BOARD RELAY FEATURES • • • • • • • • • • Subminiature size High sensitivity, 110 mW pickup Coils to 48 VDC Hermetically sealed version available Epoxy sealed for automatic wave soldering Withstands 6 kV IEEE Lightning Surge special order