18165B Search Results

Contextual Info: HB56HW165DB-6B/7B 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-571 Z Preliminary - Rev.0.0 Apr. 18,1996 Description The HB56HW 165DB is a 1M x 64 dynam ic RAM Sm all O utline Dual In-line M em ory M odule (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W 18165BTT) sealed in TSOP package and 1

Contextual Info: HB56HW165DB-6BL/7BL 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-572 Z Preliminary - Rev.0.0 Apr. 18,1996 Description The HB56HW 165DB is a 1M x 64 dynam ic RAM Sm all O utline Dual In-line M em ory M odule (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W 18165BLTT) sealed in TSOP package and 1

18165B

Contextual Info: V G 26 V (S)18165B 1,048,576 x 16-Bit CMOS Dynamic RAM VIS H Description The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

Contextual Info: DRAM 6 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, T a=0°C Organization (Wxb) Access Time max. (ns) Part Number Power Consumption max. (mW) Cycle Time min. (ns) M B81V 16 160 A -60 60[15]*1 1 10[40]"3 324 M B81V 16 160 A -70 70(17]*1 130[45]*3

Contextual Info: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70

64mb edo dram simm

Abstract: Dram 168 pin EDO 8Mx8 4Mx4 dram simm 17405CJ
Contextual Info: Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 -r 8Mx8 Volt L 4M x 16 3 Product Introduction 1.1.4 16Mb SDRAM 1.1.5 64Mb SDRAM 1.1.6 8Mb SGRAM 3.3 Volt

d8430

Abstract: 18165BSJ-60 BST60
Contextual Info: SIEM EN S 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-5Q/-60/-70 HYB 18165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 *C operating temperature • Performance: -50 -60 ^RAC RAS access time

Contextual Info: ^ 7 2 4 0 TOSHIBA 002Ö3T7 TIT 18165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The 18165BFT is the Hyper Page Mode (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The 18165BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide

Contextual Info: HM51W16165B Series 18165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-541 Z Preliminary Rev. 0.0 Mar. 20, 1996 Description The Hitachi HM51W16165B Series, 18165B Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS

51v18165

Abstract: 658J A8303 TC51V18165
Contextual Info: , IN TEG RATED TO SH IB A FO SH ibA M O S D IGITAL IN T EG R A TED T C 5 1 V 1 8 1 6 5 B J S / B F T S - 60 T C 5 1 V 1 8 1 6 5 B J S / B F T S - 70 CIRCUIT TECH N ICAL DATA . CIRCU IT SILICON GATE CMOS TENTATIVE DA TA 1,048,576 W O R D x 16 BIT EDO HYPER PAGE DYNAM IC RAM

5116 RAM

Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
Contextual Info: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 18165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)

Contextual Info: SIEMENS 1 M x 1 6 - B it D y n a m ic R A M H Y B 5 1 1 6 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 1 k & 4 k R e fre s h H Y B 5 1 1 8 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 H y p e r P a g e M o d e - E D O Prelim inary Inform ation max. 495 active mW ( HYB3116165BSJ-60)

lg 15.6 pinout

Abstract: tp 147
Contextual Info: 18165B,18165B 1M.2M x 64-Bit Dynamic RAM Module_ VIS H Description The 18165B and 18165B are 1 M x 64-bit and 2 M X 64-bit dual-in-line dynam ic RAM m odules DIM M . It is mounted by 4/8 pieces o f 1M X 16 DRAM (18165BB), and

VG2618165BJ

Abstract: VG2618165 VM23218165 jcsr MAX3242 VM23218165B
Contextual Info: VM 18165B,VM 18165B 1M,2M x 32-Bit Dynamic RAM Module v is m D escription The 18165B and 18165B are 1 M x 32-bit and 2M X 32-bit dynamic RAM modules. It is mounted by 2/4 pieces of 1M x 16 DRAM 18165BB , dnd each in a standard 42 pin plastic SOJ packages. The 18165B and 18165B makes high

VG2618160

Abstract: HA2010
Contextual Info: viswi V M 13218160B ,V M 23218160B 1M ,2M x 32-B it Dynamic RAM Module_ Description The V M 13218160B and VM23218160B are 1M x 32-bit and 2M x 32-bit dynam ic RAM modules. It is m ounted by 2/4 pieces o f 1M x 16 DRAM VG2618160B ,and each in a standard

29F400TA

Abstract: FLC31SVC6S MB90P263 15E03L 81V4405C 29lv800ta MB3799 B566 MB47082 29LV800BA
Contextual Info: Index Page Document code Series Series Series Series Series 33 35 36 37 31 - CG51 Series D 5 C B Series D1 F1 Series F2 Series F3 Series 32 112 113 113 113 D S0 4 -2 3 1 1 1 -1 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E F4C Series (T1)