AQW210EH
Abstract: AQW210EHA AQW212EH AQW212EHA AQW214EH AQW214EHA AQW216EH
Contextual Info: GU-E PhotoMOS AQW21PEH TESTING General use and economy type. DIP (2 Form A) 8-pin type. Reinforced insulation 5,000V type. FEATURES 6.4 .252 9.86 .388 GU-E PhotoMOS (AQW21PEH) 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 2 7 3 6 4 5 1. Reinforced insulation 5,000 V type
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AQY212G2S
Abstract: AQY212G2SX AQY212G2SZ AQY212GS AQY212GSX AQY212GSZ
Contextual Info: GU PhotoMOS AQY212GS, AQY212G2S VDE (AQY212GS) (AQY212GS) Load current greatly increased using next-generation MOSFET High Capacity 4-pin Type 4.3 .169 4.4 .173 2.1 .083 mm inch 1 4 2 3 GU PhotoMOS (AQY212GS, AQY212G2S) FEATURES TYPICAL APPLICATIONS 1. Greatly increased load current in
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AQV251
Abstract: AQV257 AQV258 AQV251A AQV252 AQV253 AQV254 AQV255 AQV259
Contextual Info: HE PhotoMOS AQV25P (Standard type) 6.4 .252 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 2 5 3 4 (Reinforced type) HE PhotoMOS (AQV25P) High sensitivity and low on-resistance. DIP (1 Form A) 6-pin type. 8.8 .346 TESTING FEATURES TYPICAL APPLICATIONS 1. Highly sensitive and low onresistance
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DS_X615_EN_AQY221N1S
Abstract: AQY221N1S AQY221N1SX AQY221N1SZ
Contextual Info: RF PhotoMOS AQY221N1S Lower output capacitance and on resistance. (CR20) High speed switching. (Turn on time: 0.04ms, Turn off time: 0.06ms). 4.4 .173 2.1 .083 4.3 .169 mm inch 1 4 2 3 RF PhotoMOS (AQY221N1S) FEATURES TYPICAL APPLICATIONS 1. Low output capacitance between
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2 form c ssr
Abstract: aqw214ax AQW216 ssr schematic circuit AQW212 AQW212A AQW212AX AQW212AZ AQW214 AQW215
Contextual Info: GU PhotoMOS AQW21P Compact DIP (2 Form A) 8-pin type. Controls load voltage 60V to 600V. FEATURES 6.4 .252 9.78 .385 3.9 .154 6.4 .252 3.6 .142 9.78 .385 mm inch 1 8 2 7 3 6 4 5 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 x (L) 9.78 ×(H) 3.9 mm (W) .252×(L)
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PhotoMOS Relay
Abstract: AQY210KS AQY210KSX AQY210KSZ
Contextual Info: GU PhotoMOS AQY210KS TESTING Short circuit protection (Latch type). 4.3 .169 4.4 .173 2.1 .083 mm inch 1 4 2 3 GU PhotoMOS (AQY210KS) FEATURES TYPICAL APPLICATIONS 1. Short circuit protection (Latch type) When the output current exceeds a fixed amount, it is cut and the off state is
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AQW224N
Abstract: AQW224NA AQW224NAX AQW224NAZ AQW227N AQW227NA AQW227NAX AQW227NAZ
Contextual Info: RF PhotoMOS AQW22PN Lower output capacitance and on resistance. High speed switching. (Turn on time: 0.2ms, Turn off time: 0.08ms). FEATURES 6.4 .252 9.78 .385 RF PhotoMOS (AQW22PN) 3.9±0.2 .154±.008 6.4 .252 9.78 .385 1. PhotoMOS relay 2-channels (Form
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AQW610EH
Abstract: AQW610EHA AQW612EH AQW612EHA AQW614EH AQW614EHA
Contextual Info: VDE GU-E PhotoMOS AQW61PEH TESTING (AQW610EH, 614EH) (AQW612EH) General use and economy type. DIP (1 Form A/1 Form B) 8-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQW61PEH) FEATURES 6.4 .252 3.2 .126 9.86 .388 1. 60V type couples high capacity
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AQY412EHA
Abstract: 414EH AQY410EH AQY410EHA AQY412EH AQY414EH AQY414EHA
Contextual Info: VDE GU-E PhotoMOS AQY41PEH TESTING (AQY410EH, 414EH) (AQY412EH) General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 The attainment of economical pricing will
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AQY212GH
Abstract: AQY212GHA AQY212GHAX AQY212GHAZ
Contextual Info: GU PhotoMOS AQY212GH VDE Load current greatly increased using next-generation MOSFET High Capacity 4-pin Type 4.78 .188 4.78 .188 6.4 .252 3.2 .126 6.4 .252 2.9 .114 mm inch (Height includes standoff) 1 4 2 3 GU PhotoMOS (AQY212GH) FEATURES TYPICAL APPLICATIONS
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AQV252GA
Abstract: AQV252G AQV252GAX AQV252GAZ
Contextual Info: HE PhotoMOS AQV252G VDE Load current greatly increased using next-generation MOSFET High Capacity 6-pin Type 6.4 .252 3.9 .154 8.8 .346 6.4 .252 3.6 .142 8.8 .346 (Height includes standoff) HE PhotoMOS (AQV252G) FEATURES TYPICAL APPLICATIONS 1. Greatly increased load current in
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225R1 photomos relay
Abstract: AQY222R1S AQY225R2S 225R1 AQY225R1SX AQY225R1S
Contextual Info: RF PhotoMOS AQY22PRPS 60 to 80V load voltage type, lower output capacitance and on resistance. (CR) 4.3 .169 4.4 .173 2.1 .083 mm inch 1 4 2 3 RF PhotoMOS (AQY22PRPS) FEATURES TYPICAL APPLICATIONS 1. Low output capacitance between output terminals, and low ONresistance (Load voltage: 60 to 80V)
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AQV212SX
Abstract: AQV212S AQV210SX AQV212SZ AQV214S AQV214SX AQV215SX AQV216SX AQV217SX
Contextual Info: GU PhotoMOS AQV21PS Super miniature design, SOP(1 Form A) 6-pin type. Controls load voltage 60V to 400V GU PhotoMOS (AQV21PS) FEATURES 6.3 .248 4.4 .173 2.1 .083 mm inch 1 6 2 5 3 4 1. 1 channel (Form A) in super miniature design The device comes in a super-miniature
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DS_X615_EN_AQV221N
Abstract: AQV221N AQV221NA AQV221NAX AQV221NAZ
Contextual Info: RF PhotoMOS AQV221N Lower output capacitance and on resistance. High speed switching. (Turn on time: 0.2ms, Turn off time: 0.08ms). 6.4 .252 3.9 .154 8.8 .346 6.4 .252 3.6 .142 8.8 .346 mm inch 1 6 2 5 3 4 RF PhotoMOS (AQV221N) FEATURES TYPICAL APPLICATIONS
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AQY210HLAZ
Abstract: AQY210HL AQY210HLA AQY210HLAX
Contextual Info: GU PhotoMOS AQY210HL TESTING Current Limit Function. DIP(1 Form A) 4-pin type. Reinforced insulation 5,000V type. GU PhotoMOS (AQY210HL) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 1. Current Limit Function To control an over current from flowing,
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AQY210S
Abstract: AQY210SX AQY210SZ AQY212S AQY212SX AQY212SZ AQY214S AQY214SX AQY214SZ
Contextual Info: GU PhotoMOS AQY21PS TESTING Super miniature design, SOP(1 Form A) 4-pin type Controls load voltage 60V, 350V, 400V The device comes in a super-miniature SO package 4-Pin type measuring (W)4.3 x (L)4.4 × (H)2.1 mm (W).169 × (L).173 × (H).083 inch —approx. 70% of
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AQV210E
Abstract: AQV210EA AQV210EH AQV210EHA AQV214E AQV214EA AQV214EH AQV214EHA
Contextual Info: GU-E PhotoMOS AQV210E, AQV21PEH (Standard type) General use and economy type. DIP (1 Form A) 6-pin type. Reinforced insulation 5,000V type. TESTING (Reinforced type) GU-E PhotoMOS (AQV21PE, AQV21PEH) FEATURES 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346
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AQY221N2S
Abstract: AQY221N2SX AQY221N2SZ AQY221R2S AQY221R2SX AQY221R2SZ
Contextual Info: RF PhotoMOS AQY221P2S Lower output capacitance (C type) and on resistance (R type). (CR10) High speed switching. (C type: Turn on time: 0.03ms, Turn off time: 0.03ms). 4.3 .169 4.4 .173 2.1 .083 4.3 .169 <R type> 4.4 .173 2.1 .083 <C type> FEATURES TYPICAL APPLICATIONS
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AQV10
Abstract: AQV101 AQV101A AQV102 AQV102A AQV103 AQV103A AQV104 AQV104A AQV20
Contextual Info: HF PhotoMOS AQV10 , 20 High sensitivity and low on-resistance. DIP (1 Form A) 6-pin type. HF PhotoMOS (AQV10 , 20 ) FEATURES 8.8 .346 6.4 .252 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 1 6 2 5 2 5 3 4 3 4 (AQV10 series) (AQV20 series) 1. Controls low-level analog signals
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AQZ102
Abstract: AQZ104 AQZ105 AQZ107 AQZ202 AQZ204 AQZ205 AQZ207 IN 400 DC
Contextual Info: Power PhotoMOS AQZ10P, 20P High capacity PhotoMOS Relay. (Load current Max. 4A) DC load type is available. 3.5 .138 21 .827 12.5 .492 mm inch 1 2 – 3 + 4 AC/DC type 1 – 2 3 + – 4 + DC type Power PhotoMOS (AQZ10P, 20P) FEATURES TYPICAL APPLICATIONS
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